Results 81 to 90 of about 5,812,653 (293)

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition

, 2017
There is a great interest in various branches of the advanced materials industry for the development of novel methods (and improvements to existing ones) for the deposition of conformal ultrathin metallic films.
Bosnick, ken, Hogan, James D., Cui, Kai, Motamedi, Pouyan, Cadien, Ken   +4 more
core   +1 more source

Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry [PDF]

, 2005
In situ spectroscopic ellipsometry has been employed to determine the properties of titanium nitride (TiN) films during plasma-assisted atomic layer deposition by alternating TiCl4 precursor dosing and H2–N2 plasma exposure.
Sanden, MCM Richard van de, Kessels, WMM Erwin, Heil, S.B.S., Kemmeren, ALAM, Roozeboom, F Fred, Langereis, E., Roozeboom, F., W. M. M. Kessels, Langereis, E Erik, M. C. M. van de Sanden, A. Kemmeren, S. B. S. Heil, Kemmeren, A., Sanden, van de, M.C.M., F. Roozeboom, Heil, SBS Stephan, Kessels, W.M.M., E. Langereis   +17 more
core   +2 more sources

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition

APL Materials, 2020
Simultaneously inducing preferred crystalline orientation with a strong piezoelectric response in polycrystalline aluminum nitride (AlN) thin films by atomic layer deposition is a technical challenge due to the upscaling of the integration of ...
Tai Nguyen, Noureddine Adjeroud, Sebastjan Glinsek, Yves Fleming, Jérôme Guillot, Patrick Grysan, Jérôme Polesel-Maris   +6 more
doaj   +1 more source

Spatially Regulated Lithium Plating via Li2O‐Rich Interphase Enables Durable Fast‐Charging Hybrid Lithium Batteries

Advanced Functional Materials, EarlyView.
A Li2O‐rich solid electrolyte interphase (SEI) is engineered on graphite through a propylene carbonate‐based electrolyte to spatially regulate Li plating. The homogeneous interphase lowers Li nucleation barriers, promotes conformal Li deposition around graphite particles, and suppresses dendritic accumulation, enabling durable hybrid Li‐ion/Li‐metal ...
Robert Kuphal, Jingjing Liu, Junxiang Liu, Tao Ma, Yi Ding, Mahmood Haq, Satish Udpa, Stephen J. Harris, Chengcheng Fang   +8 more
wiley   +1 more source

Plasma atomic layer deposition [PDF]

, 2018
Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma.

core  

Thermal and plasma enhanced atomic layer deposition of Al2O3on GaAs substrates [PDF]

, 2009
A good dielectric layer on the GaAs substrate is one of the critical issues to be solved for introducing GaAs as a candidate to replace Si in semiconductor processing.
Sioncke, S., Kessels, WMM Erwin, Delabie, Annelies, Delabie, A, Brammertz, Guy, Meuris, M, Sioncke, Sonja, Heyns, MM, Heyns, Marc, van Hemmen, J.L., Franquet, A, Conard, Thierry, Urbanczyk, A.J., Meuris, Marc, Urbanzcyk, Adam, Caymax, Matty, Sioncke, S, Meuris, M., Franquet, Alexis, Caymax, M, Caymax, M., Brammertz, G., Kessels, W.MM., Delabie, A., Hemmen, van, J.L., Urbanczyk, AJ Adam, Keuning, W Wytze, Franquet, A., Heyns, M.M., Brammertz, G, Conard, T, Hemmen, JL Hans van, Kessels, W.M.M., Conard, T., Keuning, W.   +34 more
core   +2 more sources

Dynamically Actuated Reconfigurable Topographical Surface Enables Active Control of Implant‐Associated Infections

Advanced Functional Materials, EarlyView.
A dynamically actuated reconfigurable topographical surface (DARTS) integrates contact‐mediated bactericidal nanotopography with programmable mechanical actuation to actively disrupt bacterial biofilms. Dynamic surface reconfiguration enhances bacterial killing and suppresses implant‐associated infections in vivo, providing a new strategy for active ...
Mohammad Asadi Tokmedash, Jihun Lee, J. Scott VanEpps, Sungmin Nam, Jouha Min   +4 more
wiley   +1 more source

Plasma-assisted atomic layer deposition of ultrathin oxide and metal films [PDF]

, 2009
Atomic layer deposition (ALD) is a thin film deposition method based on alternating saturated surface chemical reactions in which the self-limiting growth behavior allows for the deposition of ultrathin films with submonolayer control and with a high ...
Kessels, WMM Erwin, Kessels, W.M.M.
core   +1 more source