Results 81 to 90 of about 23,511 (291)

Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry [PDF]

, 2005
In situ spectroscopic ellipsometry has been employed to determine the properties of titanium nitride (TiN) films during plasma-assisted atomic layer deposition by alternating TiCl4 precursor dosing and H2–N2 plasma exposure.
Sanden, MCM Richard van de, Kessels, WMM Erwin, Heil, S.B.S., Kemmeren, ALAM, Roozeboom, F Fred, Langereis, E., Roozeboom, F., W. M. M. Kessels, Langereis, E Erik, M. C. M. van de Sanden, A. Kemmeren, S. B. S. Heil, Kemmeren, A., Sanden, van de, M.C.M., F. Roozeboom, Heil, SBS Stephan, Kessels, W.M.M., E. Langereis   +17 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Composites of Shellac and Silver Nanowires as Flexible, Biobased, and Corrosion‐Resistant Transparent Conductive Electrodes

Advanced Functional Materials, EarlyView.
Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein, Tiago Carneiro Gomes, Eliza Ng, Simon Rondeau‐Gagné, Tricia Breen Carmichael   +4 more
wiley   +1 more source

Inhibition of Anti-Reflection Film Cracks on Plastic Substrates Using Nanolaminate Layer Deposition in Plasma-Enhanced Atomic Layer Deposition

Technologies
In this research, we mainly increase the adhesion of PMMA substrate and film, which is reflected in the environmental test. This study used plasma-enhanced atomic layer deposition (PEALD) to find the relationship between the intensity of XRD reflection ...
Chi-Chieh Wang, Cheng-Fu Wang, Meng-Chi Li, Li-Chen Su, Chien-Cheng Kuo   +4 more
doaj   +1 more source

A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition

APL Materials, 2020
Simultaneously inducing preferred crystalline orientation with a strong piezoelectric response in polycrystalline aluminum nitride (AlN) thin films by atomic layer deposition is a technical challenge due to the upscaling of the integration of ...
Tai Nguyen, Noureddine Adjeroud, Sebastjan Glinsek, Yves Fleming, Jérôme Guillot, Patrick Grysan, Jérôme Polesel-Maris   +6 more
doaj   +1 more source

Plasma-assisted atomic layer deposition of ultrathin oxide and metal films [PDF]

, 2009
Atomic layer deposition (ALD) is a thin film deposition method based on alternating saturated surface chemical reactions in which the self-limiting growth behavior allows for the deposition of ultrathin films with submonolayer control and with a high ...
Kessels, WMM Erwin, Kessels, W.M.M.
core  

Atomic layer deposition of Ru from CpRu(CO2)Et using O2 gas and O2 plasma [PDF]

, 2011
The metalorganic precursor cyclopentadienylethyl(dicarbonyl)ruthenium (CpRu(CO)2Et) was used to develop an atomic layer deposition (ALD) process for ruthenium. O2 gas and O2 plasma were employed as reactants.
Verkuijlen, ROF, Kessels, WMM Erwin, Verkuijlen, R. O. F., Verkuijlen, R.O. F., Roozeboom, F Fred, Langereis, E., Rushworth, S.A., Roozeboom, F., W. M. M. Kessels, Leick, N Noémi, Leick, N., Lamagna, L., Sanden, van de, M.C.M., E. Langereis, L. Lamagna, Sanden, MCM Richard van de, S. Rushworth, Langereis, E Erik, Rushworth, SA, M. C. M. van de Sanden, N. Leick, R. O. F. Verkuijlen, Kessels, W.M. M., Verkuijlen, R.O.F., van de Sanden, M.C. M., Rushworth, S., F. Roozeboom, Lamagna, L Luca, Kessels, W.M.M., Kessels, W. M. M.   +29 more
core   +1 more source

A Surface‐engineered Microfluidic Device for Antibody‐Mediated Negative Selection of High‐Quality Sperm for Assisted Reproduction

Advanced Functional Materials, EarlyView.
This study reports a microfluidic device with a functionalized surface utilizing a polyoxazoline coating and covalently immobilized gold nanoparticles and anti‐phosphatidylserine antibody. The device efficiently eliminates pre‐apoptotic and apoptotic spermatozoa and yields sperm with substantially improved quality and low DNA damage, offering a simple ...
Soraya Rasi Ghaemi, David J. Sharkey, Nicole O. McPherson, Markos Negash Alemie, Krasimir Vasilev, Sarah A. Robertson   +5 more
wiley   +1 more source

Remote plasma atomic layer deposition of Co3O4 thin films [PDF]

, 2011
Cobalt oxide thin films have been deposited with remote plasma atomic layer deposition (ALD) within a wide temperature window (100–400°C), using CoCp2 as a cobalt precursor and with remote O2 plasma as the oxidant source.
Kessels, WMM Erwin, M. C. M. van, Notten, P. H. L., W. M. M. Kessels, H. C. M. Knoops, Notten, PHL Peter, Notten, P.H. L., Knoops, H.C. M., Donders, M.E., P. H. L. Notten, Knoops, H.C.M.; id_orcid, Sanden, van de, M.C.M., Knoops, H.C.M., Knoops, HCM Harm, Sanden, MCM Richard van de, Knoops, H. C. M., Donders, ME Merijn, Notten, P.H.L., M. C. M. van de Sanden, Donders, M. E., Kessels, W.M. M., van de Sanden, M.C. M., M. E. Donders, Kessels, W.M.M., Kessels, W. M. M.   +24 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source