Results 91 to 100 of about 23,511 (291)
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu +17 more
wiley +1 more source
Plasma atomic layer deposition
Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma.
core
Thermal and plasma enhanced atomic layer deposition of Al2O3on GaAs substrates [PDF]
A good dielectric layer on the GaAs substrate is one of the critical issues to be solved for introducing GaAs as a candidate to replace Si in semiconductor processing.
Sioncke, S. +34 more
core +1 more source
A compostable PGS soft surgical robot with interchangeable modules integrates transient Mo tactile and Si thermal sensors for dual feedback. The device preserves its function after clinical‐grade sterilization, demonstrates stable actuation and cardiac tissue grasping with real‐time in vivo pulsatile monitoring, and biodegrades post‐use with soil‐safe,
Minseong Chae +27 more
wiley +1 more source
Plasma-enhanced atomic layer deposition of Al2O3 on graphene via an in situ-deposited interlayer
Published by Elsevier Science, Amsterdam [u.a.]
Riazimehr, Sarah +9 more
openaire +2 more sources
Production of carbon nanotubes by PECVD and their applications to supercapacitors
Màster en Nanociència i NanotecnologiaPlasma enhanced chemical vapor deposition (PECVD) is a versatile technique to obtain vertically dense-aligned carbon nanotubes (CNTs) at lower temperatures than chemical vapor deposition (CVD).
Caglar, Burak
core
Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension [PDF]
As we enter an era of atomic scale devices, there is a strict need for precise control over the thickness and properties of materials em-ployed in device fabrication [1,2].
Knoops, Harm +3 more
core
Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy [PDF]
The surface groups created during plasma-assisted atomic layer deposition (ALD) of Al2O3 were studied by infrared spectroscopy. For temperatures in the range of 25–150 °C, –CH3 and –OH were unveiled as dominant surface groups after the Al(CH3)3precursor ...
Sanden, MCM Richard van de +11 more
core +1 more source
Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben +6 more
wiley +1 more source
Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition [PDF]
Abstract not Available.
Sun Jin Yun, Jung Wook Lim, Jin Ho Lee
openaire +1 more source

