Results 91 to 100 of about 5,812,653 (293)

Bio‐Inspired Artificial Ionic Mechanoreceptor

open access: yesAdvanced Functional Materials, EarlyView.
A skin‐inspired artificial mechanoreceptor based on ionic interactions is presented for biomimetic tactile sensing. Pressure‐driven ionic redistribution within microfluidic channels generates a self‐powered electrical signal without external bias. The generated waveform exhibits mechanoreceptor‐like temporal features, including overshoot and undershoot,
Mohammad Akbari   +4 more
wiley   +1 more source

Characterization of HZO Films Fabricated by Co-Plasma Atomic Layer Deposition for Ferroelectric Memory Applications

open access: yesNanomaterials
Plasma-enhanced atomic layer deposition (ALD) is a common method for fabricating Hf0.5Zr0.5O2 (HZO) ferroelectric thin films that can be performed using direct-plasma (DP) and remote-plasma (RP) methods.
Won-Ji Park   +6 more
doaj   +1 more source

Remote plasma atomic layer deposition of Co3O4 thin films [PDF]

open access: yes, 2011
Cobalt oxide thin films have been deposited with remote plasma atomic layer deposition (ALD) within a wide temperature window (100–400°C), using CoCp2 as a cobalt precursor and with remote O2 plasma as the oxidant source.
Kessels, WMM Erwin   +24 more
core   +2 more sources

Melanin's Role in Balancing Mechanical Strength and Reproductive Output in Environmentally Stressed Fungal Spores

open access: yesAdvanced Functional Materials, EarlyView.
Melanin content directly controls fungal spore mechanical properties, with pigmented spores achieving rupture forces two orders of magnitude higher than hyaline spores. Environmental stress drives this quantity‐quality tradeoff; stressed species invest energy in melanin‐reinforced, mechanically superior thick‐walled, super‐hydrophobic spores, while ...
Atul Agrawal, Steven E. Naleway
wiley   +1 more source

Energy-enhanced atomic layer deposition : offering more processing freedom

open access: yes, 2013
Atomic layer deposition (ALD) is a popular deposition technique comprising two or more sequential, self-limiting surface reactions, which make up an ALD cycle.
Potts, SE Stephen   +5 more
core   +1 more source

Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon

open access: yes, 2023
The effect of adding an atomic layer annealing step to a plasma-enhanced atomic layer deposition process of aluminum nitride was investigated with commonly available materials.
Mizohata, Kenichiro   +12 more
core   +1 more source

CO2‐to‐CO Conversion in a Gas‐Fed, Zero‐Gap, PEM Electrolyzer Enabled by Polycations and Nitrogen‐Doped Carbon‐Supported Cobalt Nanoparticles

open access: yesAdvanced Functional Materials, EarlyView.
A gas‐fed, zero‐gap, PEM CO2 electrolyzer is realized by incorporating PDDA+ ions onto the carbonaceous Co/N‐C electrocatalyst, with gaseous H2 and CO2 fed into the anode and cathode, respectively. Operating without an aqueous electrolyte, the system sustains a peak FECO of 65.1% at 100 mA cm−2. ABSTRACT Electrochemical carbon dioxide reduction (ECO2R)
Yuen Leong Chow   +6 more
wiley   +1 more source

Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension [PDF]

open access: yes, 2019
As we enter an era of atomic scale devices, there is a strict need for precise control over the thickness and properties of materials em-ployed in device fabrication [1,2].
Knoops, Harm   +3 more
core   +1 more source

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Silicon Dioxide and Aluminum Oxide

open access: yes, 2019
Atomic layer deposition (ALD) is a powerful deposition technique for the fabrication of highly conformal and precise thickness-controlled films. Recently, there has been a growing interest in low-temperature (< 100˚C) ALD because of the emerging ...
Zhu, Zhen
core   +1 more source

Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy [PDF]

open access: yes, 2008
The surface groups created during plasma-assisted atomic layer deposition (ALD) of Al2O3 were studied by infrared spectroscopy. For temperatures in the range of 25–150 °C, –CH3 and –OH were unveiled as dominant surface groups after the Al(CH3)3precursor ...
Sanden, MCM Richard van de   +11 more
core   +2 more sources

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