Results 91 to 100 of about 17,992 (248)

Domain Engineering and Anisotropic Domain‐Wall Photovoltaic Effects in Ferroelectric SnS

Advanced Functional Materials, EarlyView.
The bulk photovoltaic effect at domain walls in the in‐plane ferroelectric 2D semiconductor SnS is investigated using periodic domain structures. Unlike conventional oxide ferroelectrics, domain walls of SnS do not contribute to photocurrent generation perpendicular to the domain walls.
Ryo Nanae, Satsuki Kitamura, Tomonori Nishimura, Kaito Kanahashi, Tomoaki Kameda, Katsunori Wakabayashi, Redhwan A Moqbel, Ting‐Hsuan Wu, Kung‐Hsuan Lin, Yosuke Ogawa, Eiji Nishibori, Keisuke Shinokita, Kazunari Matsuda, Jui‐Han Fu, Vincent Tung, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio   +17 more
wiley   +1 more source

Comparative Study of Thermal and Plasma-Enhanced Atomic Layer Deposition of Iron Oxide Using Bis(N,N'-di-butylacetamidinato)iron(II). [PDF]

Nanomaterials (Basel), 2023
Choi B, Park GW, Jeong JR, Jeon N.
europepmc   +1 more source

Direct Integration of Conductive, Emissive Perovskite Nanocrystals Into Efficient Light‐Emitting Diodes Without Post‐Synthetic Ligand Exchange

Advanced Functional Materials, EarlyView.
We demonstrate the direct integration of CsPbBr3 perovskite nanocrystals (PNCs) into optoelectronic devices without post‐synthetic ligand exchange. This is achieved by synthesizing PNCs stabilized by strong‐binding‐energy oleylammonium–bromide pairs instead of oleate ligands. The resultant low ligand density and minimized surface defects enhance charge
Jigeon Kim, Yubin Lee, Gyeong Eun Seok, Dong Gyu Lee, Seongwon Lee, Huieun Kim, Sung Woo Jang, Wooyeon Kim, Wondo Choi, Woo Hyeon Jeong, Donghun Lee, Min Jae Ko, Won Bin Im, Jinhan Cho, Tae Kyung Lee, Bo Ram Lee, Younghoon Kim   +16 more
wiley   +1 more source

Atomic-Level Sn Doping Effect in Ga₂O₃ Films Using Plasma-Enhanced Atomic Layer Deposition. [PDF]

Nanomaterials (Basel), 2022
Shen Y, Ma HP, Gu L, Zhang J, Huang W, Zhu JT, Zhang QC.   +6 more
europepmc   +1 more source

Reliability Engineering of High‐Mobility IGZO Transistors via Gate Insulator Heterostructures Grown by Atomic Layer Deposition

Advanced Materials Interfaces
The reliability of oxide‐semiconductor (OS) thin‐film transistors (TFTs) is significantly influenced by the gate insulator (GI). During electrical bias stress, the defect sites near the semiconductor/GI interface and/or within the GI may trap electrons ...
Yoon‐Seo Kim, Taewon Hwang, Hye‐Jin Oh, Joon Seok Park, Jin‐Seong Park   +4 more
doaj   +1 more source

Microfluidic Nano‐Assembly of Red‐Blood‐Cell (RBC) Lipids and Components for Engineering Extracellular Vesicles

Advanced Healthcare Materials, EarlyView.
Engineered red blood cell‐derived extracellular vesicles (eRBCEVs) are synthesized via controlled microfluidic assembly from native RBC lipids, enabling tunable encapsulation of proteins, nucleic acids, nanoparticles, and viral vectors. The platform demonstrates reproducible nanoscale architecture, preserved membrane composition, and functional cargo ...
Chiranth K. Nagaraj, Xilal Y. Rima, Kim T. Nguyen, Courtney Culkins, Nana Boateng, Jacob Doon‐Ralls, Alejandro Bresolin, Xin Huang, Hong Li, Vahedi Amid, Ajeet Pal Singh, Dharti Shantaram, Anastasiia Amari, Mangesh D. Hade, Nicholas R. Merriam, Zachary D. Schultz, Scott Q. Harper, Nizar Y. Saad, Setty M. Magaña, Willa A. Hsueh, Rachel E. Kopec, Blaise R. Kimmel, Andre F. Palmer, Eduardo Reátegui   +23 more
wiley   +1 more source

Influence of deposition temperature on microstructure and gas-barrier properties of Al₂O₃ prepared by plasma-enhanced atomic layer deposition on a polycarbonate substrate. [PDF]

RSC Adv, 2023
Ren Y, Sun X, Chen L, Wei H, Feng B, Chen J.   +5 more
europepmc   +1 more source

Interface-Engineered, Low-Damage IGZO/HfO₂ Charge-Trapping Memory Devices Fabricated Using a Remote Plasma ALD Process

Micromachines
In this study, charge-trapping memory (CTM) transistors were developed using indium gallium zinc oxide (IGZO) as the oxide semiconductor channel and high-k HfO2 as the charge-trapping layer, aiming for next-generation nonvolatile memory applications.
Inkook Hwang, Hyeonwu Nam, Jiwon Kim, Byungwook Kim, Yongwoon Jang, Wookyung Lee, Minkyun Kang, Changbun Yoon   +7 more
doaj   +1 more source

Cellular Responses to Mechanical Cues Across Scales: From Fundamental Insights to Translational Potential

Advanced Healthcare Materials, EarlyView.
This review examines how cellular behavior is regulated by mechanical cues transmitted through soft biomaterials, from single‐cell mechanosensing to tissue‐level adaptation. It highlights why physiological relevance, rather than model complexity alone, is critical for translational mechanobiology and introduces a scoring framework linking material ...
Mathias Polz, Manuel P. Kainz, Niklas Haider, Theresa Rienmüller, Kerstin Lenk, Rupert Kargl, Michele Terzano, Gerhard Sommer, Gerhard A. Holzapfel, Julia Fuchs   +9 more
wiley   +1 more source

Effect of a ZrO₂ Seed Layer on an Hf_0.5Zr_0.5O₂ Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition. [PDF]

Materials (Basel), 2023
Song JN, Oh MJ, Yoon CB.
europepmc   +1 more source