Results 111 to 120 of about 5,812,653 (293)

Nitride MXenes Beyond Carbides: Bridging the Gap Between Computational Prediction and Experimental Realization

open access: yesAdvanced Functional Materials, EarlyView.
Nitride MXenes remain constrained by a persistent gap between computational prediction and experimental realization. This Review identifies the thermodynamic, kinetic, and chemical barriers limiting their synthesis, critically evaluates emerging fabrication routes, and proposes a multidimensional computational‐experimental framework to accelerate the ...
Naresh Varnakavi, Masoud Soroush
wiley   +1 more source

Studies on enhanced OLED performance using Al2O3 buffer layer by atomic layer deposition

open access: yes, 2012
 It has been found that introduction of buffer layers between organic holes transport layer and anode layer plays an important role in improving device stability and hole injection efficiency.
Z. Cui(崔铮)   +2 more
core  

Degradation of the Deposition Blocking Layer During Area-Selective Plasma-Enhanced Atomic Layer Deposition of Cobalt

open access: yes, 2010
The effects of plasma on the degradation of the deposition blocking layer during area-selective atomic layer deposition were investigated.
Kim, H   +6 more
core   +1 more source

Structure‐Property Relationships in Catecholamine Coatings for Broad Surface Functionalization

open access: yesAdvanced Functional Materials, EarlyView.
Inspired by mussel adhesive proteins (MAPs), six catecholamine molecules with different molecular structure were systematically characterized and compared based on their ability to form homogeneous, reactive coatings. Highlighting candidates capable of balancing coating properties of interest, their successful use as primer layers for organic and ...
Caroline F. Harms   +5 more
wiley   +1 more source

Ferroelectric aluminum−scandium nitride by plasma-enhanced atomic layer deposition under ultrahigh purity conditions

open access: yesCommunications Materials
Wurtzite aluminum–scandium nitride thin films hold strong potential for future electronic and sensing technologies. However, achieving precise control and uniform coverage across complex three-dimensional architectures remains challenging.
Gilbert B. Rayner Jr   +13 more
doaj   +1 more source

Out‐of‐Plane Strain‐Decoupled Architecture for High‐Fill‐Factor Stretchable OLED Displays

open access: yesAdvanced Functional Materials, EarlyView.
A vertically decoupled multilayer SOLED architecture separates emissive pixel islands from deformable interconnects, allowing low‐modulus elastomeric layers to accommodate applied strain and suppress strain transfer to the OLED region. This design, combined with transparent hybrid encapsulation, enables a high fill factor (∼75%), stretchability ...
Young Hyun Son   +2 more
wiley   +1 more source

Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films and Heterostructures: Mechanisms and Applications

open access: yesCrystals
Group III-nitride semiconductors (GaN, AlN, InN) serve as foundational materials for modern optoelectronics, high-frequency microelectronics, and next-generation energy harvesting devices.
Sanjie Liu   +10 more
doaj   +1 more source

Defect‐Free Transfer Principles for Scalable, Thin Garnet‐Based Hybrid Solid Electrolytes in Solid‐State Batteries

open access: yesAdvanced Functional Materials, EarlyView.
Defect‐free transfer principles enable scalable fabrication of 15 µm‐thin garnet‐based hybrid solid electrolytes. Hansen solubility parameters correlate interfacial compatibility with coating, transfer, and impregnation behavior, guiding rational selection of slurry/substrate, binder/substrate, and binder/polymer electrolyte combinations.
Seul Gi Chu   +8 more
wiley   +1 more source

A New Strategy for Creating Quantum Light Emitters Via Post‐Growth Hydrogen‐Ion Irradiation of III‐V Nanowires

open access: yesAdvanced Functional Materials, EarlyView.
A post‐growth method is demonstrated to realize energy‐tunable quantum emitters in GaAs/GaAsN/GaAs core–multishell nanowires on a Si substrate. By combining the N‐induced bandgap reduction with H‐ion irradiation, the GaAsN potential landscape is engineered, enabling isolated, narrow emission lines that function as single‐photon sources with g(2)(0) ∼ 0.
Akant Sagar Sharma   +10 more
wiley   +1 more source

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