Results 121 to 130 of about 5,812,653 (293)

Comparative Study of Thermal and Plasma-Enhanced Atomic Layer Deposition of Iron Oxide Using Bis(N,N'-di-butylacetamidinato)iron(II). [PDF]

Nanomaterials (Basel), 2023
Choi B, Park GW, Jeong JR, Jeon N.
europepmc   +1 more source

Halide Composition Controls Phase Morphology and Device Specific Performance in Perovskite Photovoltaics and Light Emitting Diodes

Advanced Functional Materials, EarlyView.
We demonstrate that halide composition determines phase morphology, governing distinct operating mechanisms in mixed halide perovskites. Phase segregating 75% Br compositions enhance solar cell performance, whereas intrinsically phase‐separated 95% Br compositions provide stable light emitting diodes.
Tal Binyamin, Stav Rahmany, Anat Shvets, Hadar Shema, Elad Gross, Ido Hadar, Lioz Etgar   +6 more
wiley   +1 more source

Reliability Engineering of High‐Mobility IGZO Transistors via Gate Insulator Heterostructures Grown by Atomic Layer Deposition

Advanced Materials Interfaces
The reliability of oxide‐semiconductor (OS) thin‐film transistors (TFTs) is significantly influenced by the gate insulator (GI). During electrical bias stress, the defect sites near the semiconductor/GI interface and/or within the GI may trap electrons ...
Yoon‐Seo Kim, Taewon Hwang, Hye‐Jin Oh, Joon Seok Park, Jin‐Seong Park   +4 more
doaj   +1 more source

Atomic-Level Sn Doping Effect in Ga₂O₃ Films Using Plasma-Enhanced Atomic Layer Deposition. [PDF]

Nanomaterials (Basel), 2022
Shen Y, Ma HP, Gu L, Zhang J, Huang W, Zhu JT, Zhang QC.   +6 more
europepmc   +1 more source

Ligand Assisted Epitaxial Growth of CsPbBr3 Microcrystal Resonators With Record ‐Low Lasing Thresholds

Advanced Functional Materials, EarlyView.
Solution‐based ligand‐assisted epitaxial growth (LAEG) yields high‐quality CsPbBr3 microcrystals on different substrates with superior morphology, passivated surfaces, and high photoluminescence quantum yield. These robust micro‐resonators achieve record‐low room‐temperature lasing thresholds of 7.2 kW·cm−2 and maintain operational stability up to 90 ...
Shuyu Zhou, Viktor Rehm, Zijian Peng, Tomáš Hrbek, Anastasia Barabash, Christoph J. Brabec, Berke Özyalin, Yufei Han, Johannes Böhmer, Johannes Will, Erdmann Spiecker, Klaus Götz, Tobias Unruh, Jędrzej Korczak, Tomasz Story, Felix Hilpert, Olaf Brummel, Jörg Libuda, Iva Matolínová, Wolfgang Heiss   +19 more
wiley   +1 more source

Influence of deposition temperature on microstructure and gas-barrier properties of Al₂O₃ prepared by plasma-enhanced atomic layer deposition on a polycarbonate substrate. [PDF]

RSC Adv, 2023
Ren Y, Sun X, Chen L, Wei H, Feng B, Chen J.   +5 more
europepmc   +1 more source

Guanosine‐Quadruplex Hydrogels as Dynamic, Mechanically Tunable and Ion Conductive 3D Scaffolds for Cell Culture Applications

Advanced Functional Materials, EarlyView.
Versatile guanosine‐quadruplex (GQ) hydrogels are developed as dynamic biomatrices for cell culture. These scaffolds are fabricated under mild aqueous conditions, present improved stability, tunable mechanical properties within physiological ranges; fibrillar, porous microstructure, ion conductivity, and cytocompatibility.
Neha Thakur, Minye Jin, Pavel Milkin, Deepa Negi, Carla Cofiño Fabres, Hubert Gojzewski, Leonid Ionov, Alla Synytska, Andries van der Meer, Robert Passier, Julieta I. Paez   +10 more
wiley   +1 more source

Defect‐Mediated Inelastic Light Scattering by Infrared Phonons in Hexagonal Boron Nitride

Advanced Functional Materials, EarlyView.
Optically active defects in hexagonal boron nitride enable inelastic stimulated light scattering mediated by infrared‐active phonons, relaxing conventional Raman selection rules. Defect engineering enhances the Stokes‐conversion process and activates both TO‐ and LO‐phonon scattering channels.
Prabhdeep Singh, Bharti Garg, Maximilian Black, Masoud Taleb, Nahid Talebi   +4 more
wiley   +1 more source

Interface-Engineered, Low-Damage IGZO/HfO₂ Charge-Trapping Memory Devices Fabricated Using a Remote Plasma ALD Process

Micromachines
In this study, charge-trapping memory (CTM) transistors were developed using indium gallium zinc oxide (IGZO) as the oxide semiconductor channel and high-k HfO2 as the charge-trapping layer, aiming for next-generation nonvolatile memory applications.
Inkook Hwang, Hyeonwu Nam, Jiwon Kim, Byungwook Kim, Yongwoon Jang, Wookyung Lee, Minkyun Kang, Changbun Yoon   +7 more
doaj   +1 more source

Effect of a ZrO₂ Seed Layer on an Hf_0.5Zr_0.5O₂ Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition. [PDF]

Materials (Basel), 2023
Song JN, Oh MJ, Yoon CB.
europepmc   +1 more source