Results 121 to 130 of about 96,299 (290)

Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method

open access: yesAIP Advances, 2019
Titanium dioxide (TiO2) films were deposited by plasma enhanced atomic layer deposition (PE-ALD) system using tetrakis-dimethylamido-titanium (TDMAT) at 250 °C.
Heungseop Song   +4 more
doaj   +1 more source

Nanothermometry in Living Cells: Physical Limits, Conceptual and Material Challenges

open access: yesAdvanced Functional Materials, EarlyView.
Heat and temperature are fundamental to life. When nanothermometers began probing regions as small as a living cell, they triggered controversial claims of large intracellular temperature gradients. We review physical constraints energy‐conservation, entropy production, thermodynamic fluctuations, and molecular dynamics.
Taras Plakhotnik
wiley   +1 more source

Atomic-Level Sn Doping Effect in Ga2O3 Films Using Plasma-Enhanced Atomic Layer Deposition. [PDF]

open access: yesNanomaterials (Basel), 2022
Shen Y   +6 more
europepmc   +1 more source

Artifact‐Minimizing Ultrathin Transparent Electrodes Fabricated via iCVD for In Vivo Optogenetic Stimulation and Neural Signal Monitoring of Primary Visual Cortex

open access: yesAdvanced Functional Materials, EarlyView.
We present ultrathin flexible transparent electrodes through iCVD‐enabled molecular control of 10 nm gold films on poly(dimethylaminomethylstyrene). In vivo validation demonstrated photoelectric artifact reduction vs. opaque electrodes and preservation of natural neural dynamics.
Tae Jin Mun   +11 more
wiley   +1 more source

Reliability Engineering of High‐Mobility IGZO Transistors via Gate Insulator Heterostructures Grown by Atomic Layer Deposition

open access: yesAdvanced Materials Interfaces
The reliability of oxide‐semiconductor (OS) thin‐film transistors (TFTs) is significantly influenced by the gate insulator (GI). During electrical bias stress, the defect sites near the semiconductor/GI interface and/or within the GI may trap electrons ...
Yoon‐Seo Kim   +4 more
doaj   +1 more source

Trifluoromethoxylated Electron Acceptor Enabling Ternary Organic Solar Cells with over 20% Power Conversion Efficiency

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT In this work, we introduce a trifluoromethoxy (OCF3) group as a pseudo‐halogen terminal group design for non‐fullerene acceptors, which combines strong inductive electron‐withdrawing ability with moderate resonance donation. The as‐synthesized BTP‐OCF3, when benchmarked against its methoxy analogue BTP‐OCH3, demonstrates narrowed bandgap ...
Chunliang Li   +16 more
wiley   +1 more source

Statistically Resolving Thickness‐Dependent Electrical Characteristics in Multilayer‐MoS2 Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A large number of MoS2 flakes were screened to obtain high‐quality flakes based on optical intensities in R, G, and B channel images. The flakes were classified from Level 1 to 6 based on optical intensities in the R, G, and B channel images. Low‐quality flake exhibited wrinkled, folded, or overlapped features, while high‐quality displayed a neat ...
Sanghyun Lee   +11 more
wiley   +1 more source

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