Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben +6 more
wiley +1 more source
Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture. [PDF]
Jiang S +9 more
europepmc +1 more source
Gold bipyramids can act as efficient plasmonic nanoheaters, but they often reshape during laser heating. This study shows that oxygen nanobubbles drive oxidative etching and that surface ligands control stability. CTAB‐ and citrate‐coated particles blunt and lose optical performance, whereas polystyrene sulfonate preserves shape and heating by ...
Irene López‐Sicilia +7 more
wiley +1 more source
Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process. [PDF]
Choi Y +6 more
europepmc +1 more source
Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems
MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley +1 more source
High-Performance GaN-Based Green Flip-Chip Mini-LED with Lattice-Compatible AlN Passivation Layer
The GaN-based green miniaturized light-emitting diode (mini-LED) is a key component for the realization of full-color display. Optimized passivation layers can alleviate the trapping of carriers by sidewall defects and are regarded as an effective way to
Jiahao Song +9 more
doaj +1 more source
Effect of Process Temperature on Density and Electrical Characteristics of Hf0.5Zr0.5O2 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition. [PDF]
Kim HG, Hong DH, Yoo JH, Lee HC.
europepmc +1 more source
We report phosphine‐oxide interlayers for wide‐bandgap perovskite solar cells, in which tuned P = O Lewis basicity enables selective passivation of buried NiOx/perovskite interfaces and introduces interfacial dipoles that strengthen the built‐in field.
JeeHee Hong +6 more
wiley +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
Superhigh energy storage density on-chip capacitors with ferroelectric Hf0.5Zr0.5O2/antiferroelectric Hf0.25Zr0.75O2 bilayer nanofilms fabricated by plasma-enhanced atomic layer deposition. [PDF]
He Y +5 more
europepmc +1 more source

