Results 1 to 10 of about 261 (113)
Molecules, 2022 Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications.
Fang-Bin Ren +8 more
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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2021 In this work, we focus on the development of topographically selective deposition (TSD) leading to local deposition on the vertical sidewalls of 3D structures. A proof of concept is provided for the TSD of Ta2O5. The TSD process relies on plasma-enhanced atomic layer deposition (PEALD) alternating with quasi-atomic layer etching (ALE).
Taguhi Yeghoyan +2 more
exaly +4 more sources
Plasma Enhanced Atomic Layer Deposition on Powders [PDF]
ECS Transactions, 2014 During the last decades atomic layer deposition (ALD) gained a lot of interest for coating three dimensional structures with ultrathin conformal films. Although mainly applied on silicon wafers in microelectronics and solar, experimental efforts confirmed the technique is also applicable to powders and particles.
Geert Rampelberg +3 more
openaire +3 more sources
Plasma-Assisted Nanofabrication: The Potential and Challenges in Atomic Layer Deposition and Etching
Nanomaterials, 2022 The growing need for increasingly miniaturized devices has placed high importance and demands on nanofabrication technologies with high-quality, low temperatures, and low-cost techniques.
William Chiappim +9 more
doaj +1 more source
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Crystals, 2021 In this study, we report on the deposition of a highly crystalline AlN interfacial layer on GaN at 330 °C via plasma-enhanced atomic layer deposition (PEALD). Trimethylaluminum (TMA) and NH3 plasma were used as the Al and N precursors, respectively.
Il-Hwan Hwang +3 more
doaj +1 more source
Nanomaterials, 2023 Hf0.5Zr0.5O2 (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal–oxide–semiconductor (CMOS) process.
Da Hee Hong +6 more
doaj +1 more source
Atomistic Simulations of Plasma-Enhanced Atomic Layer Deposition [PDF]
Materials, 2019 Plasma-enhanced atomic layer deposition (PEALD) is a widely used, powerful layer-by-layer coating technology. Here, we present an atomistic simulation scheme for PEALD processes, combining the Monte Carlo deposition algorithm and structure relaxation using molecular dynamics.
Martin Becker, Marek Sierka
openaire +2 more sources
Plasma-enhanced atomic layer deposition of amorphous Ga2O3 for solar-blind photodetection
Journal of Electronic Science and Technology, 2022 Wide-bandgap gallium oxide (Ga2O3) is one of the most promising semiconductor materials for solar-blind (200 nm–280 nm) photodetection. In its amorphous form, a-Ga2O3 maintains its intrinsic optoelectronic properties while can be prepared at a low ...
Ze-Yu Fan +11 more
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Growth chemistry of cobalt nitride by plasma enhanced atomic layer deposition
Materials Research Express, 2022 State-of-the-art atomic layer deposition (ALD) and photoemission characterisation are applied to grow and characterise cobalt nitride, a material that has applications in renewable energy and semiconductor technologies.
S O’Donnell +9 more
doaj +1 more source
Data in Brief, 2020 A dataset in this report is regarding an article “Ultrathin Effective TiN Protective Films Prepared by Plasma-Enhanced Atomic Layer Deposition for High Performance Metallic Bipolar Plates of Polymer Electrolyte Membrane Fuel Cells” [1].
Woo-Jae Lee +4 more
doaj +1 more source