Results 1 to 10 of about 17,661 (114)
Atomistic Simulations of Plasma-Enhanced Atomic Layer Deposition [PDF]
Plasma-enhanced atomic layer deposition (PEALD) is a widely used, powerful layer-by-layer coating technology. Here, we present an atomistic simulation scheme for PEALD processes, combining the Monte Carlo deposition algorithm and structure relaxation using molecular dynamics.
Martin Becker, Marek Sierka
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Plasma-enhanced atomic layer deposition of vanadium nitride
This work describes process development and associated characterization of a plasma-enhanced atomic layer deposition process for vanadium nitride (VN) using tetrakis(dimethylamido)vanadium and nitrogen plasma over a deposition temperature range from 150 to 300 °C.
Alexander C. Kozen +7 more
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Plasma enhanced atomic layer deposition on powders [PDF]
During the last decades atomic layer deposition (ALD) gained a lot of interest for coating three dimensional structures with ultrathin conformal films. Although mainly applied on silicon wafers in microelectronics and solar, experimental efforts confirmed the technique is also applicable to powders and particles.
Rampelberg, Geert +1 more
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In this work, we focus on the development of topographically selective deposition (TSD) leading to local deposition on the vertical sidewalls of 3D structures. A proof of concept is provided for the TSD of Ta2O5. The TSD process relies on plasma-enhanced atomic layer deposition (PEALD) alternating with quasi-atomic layer etching (ALE).
Jaffal, Moustapha +6 more
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Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films [PDF]
Abstract not Available.
Ozgit-Akgun, Çağla +2 more
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Plasma Enhanced Atomic Layer Deposition of Tantalum (V) Oxide [PDF]
The tantalum oxide thin films are promising materials for various applications: as coatings in optical devices, as dielectric layers for micro and nanoelectronics, and for thin-films solid-state lithium-ion batteries (SSLIBs). This article is dedicated to the Ta-O thin-film system synthesis by the atomic layer deposition (ALD) which allows to deposit ...
Pavel Fedorov +7 more
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Plasma-enhanced atomic layer deposition for plasmonic TiN (Erratum) [PDF]
Publisher’s Note: This paper, originally published on 3 October 2016, was replaced with a corrected version on 12 May 2020. If you downloaded the original PDF but are unable to access the revision, please contact SPIE Digital Library Customer Service for assistance.
Lauren M. Otto +7 more
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The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
The inclusion of plasma in atomic layer deposition processes generally offers the benefit of substantially reduced growth temperatures and greater flexibility in tailoring the gas-phase chemistry to produce specific film characteristics. The benefits plasmas provide, however, come at the cost of a complex array of process variables that often challenge
David R. Boris +5 more
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Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature [PDF]
A plasma-enhanced atomic layer deposition (PE-ALD) process to deposit metallic gold is reported, using the previously reported Me3Au(PMe3) precursor with H2 plasma as the reactant. The process has a deposition window from 50 to 120 °C with a growth rate of 0.030 ± 0.002 nm per cycle on gold seed layers, and it shows saturating behavior for both the ...
Michiel Van Daele +11 more
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Plasma-Enhanced Atomic Layer Deposition of TiAlN: Compositional and Optoelectronic Tunability
Titanium nitride (TiN) is a unique refractory plasmonic material, the nanocomposites and alloys of which provide further opportunities to tailor its optical and photonic properties. We prepare TiAlN films of continuously variable compositions through the systematic variation of TiN versus AlN cycle ratio in plasma-enhanced atomic layer deposition ...
Nari Jeon +3 more
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