Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2021 In this work, we focus on the development of topographically selective deposition (TSD) leading to local deposition on the vertical sidewalls of 3D structures. A proof of concept is provided for the TSD of Ta2O5. The TSD process relies on plasma-enhanced atomic layer deposition (PEALD) alternating with quasi-atomic layer etching (ALE).
Taguhi Yeghoyan +2 more
exaly +5 more sources
Atomistic Simulations of Plasma-Enhanced Atomic Layer Deposition. [PDF]
Materials (Basel), 2019 Plasma-enhanced atomic layer deposition (PEALD) is a widely used, powerful layer-by-layer coating technology. Here, we present an atomistic simulation scheme for PEALD processes, combining the Monte Carlo deposition algorithm and structure relaxation using molecular dynamics.
Becker M, Sierka M.
europepmc +4 more sources
Compact Ga2O3 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition at Low Temperature [PDF]
Nanomaterials, 2022 Amorphous Gallium oxide (Ga2O3) thin films were grown by plasma-enhanced atomic layer deposition using O2 plasma as reactant and trimethylgallium as a gallium source.
Yue Yang +11 more
doaj +2 more sources
Dataset for TiN Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium (TDMAT) and Titanium Tetrachloride (TiCl4) Precursor [PDF]
Data in Brief, 2020 A dataset in this report is regarding an article “Ultrathin Effective TiN Protective Films Prepared by Plasma-Enhanced Atomic Layer Deposition for High Performance Metallic Bipolar Plates of Polymer Electrolyte Membrane Fuel Cells” [1].
Woo-Jae Lee +4 more
doaj +2 more sources
Plasma-Enhanced Atomic Layer Deposition of TiN Thin Films as an Effective Se Diffusion Barrier for CIGS Solar Cells [PDF]
Nanomaterials, 2021 Plasma-enhanced atomic layer deposition (PEALD) of TiN thin films were investigated as an effective Se diffusion barrier layer for Cu (In, Ga) Se2 (CIGS) solar cells.
Hyun-Jae Woo +6 more
doaj +2 more sources
Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide [PDF]
Nanoscale Research Letters, 2019 In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials.
Zhen Zhu +8 more
doaj +2 more sources
Molecules, 2022 Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications.
Fang-Bin Ren +8 more
doaj +3 more sources
Plasma-Enhanced Atomic Layer Deposition of AlF3 Antireflective Coatings via Pulse-Time Control of Fluorine Radical Reactions [PDF]
NanomaterialsPlasma-enhanced atomic layer deposition (PEALD) is used to grow high-quality aluminum fluoride (AlF3) antireflective coatings via a safe, HF-free route using trimethylaluminum and SF6 plasma.
Jing Zhang +6 more
doaj +2 more sources
Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition [PDF]
Nanoscale Research Letters, 2017 Growing high-quality and uniform dielectric on black phosphorus is challenging since it is easy to react with O2 or H2O in ambient. In this work, we have directly grown Al2O3 on BP using plasma-enhanced atomic layer deposition (PEALD).
B. B. Wu +9 more
doaj +2 more sources
Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition [PDF]
Nanoscale Research Letters, 2017 Co3O4-coated commercial TiO2 powders (P25) p-n junction photocatalysts were prepared by plasma-enhanced atomic layer deposition (PEALD) technique. The structure, morphology, bandgap, and photocatalytic properties under ultraviolet light were investigated
Xi-Rui Zhao +6 more
doaj +2 more sources