Results 41 to 50 of about 96,312 (290)

Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO

Crystals, 2020
Direct plasma enhanced-atomic layer deposition (PE-ALD) is adopted for the growth of ZnO on c-Si with native oxide at room temperature. The initial stages of growth both in terms of thickness evolution and crystallization onset are followed ex-situ by a ...
Alberto Perrotta, Julian Pilz, Roland Resel, Oliver Werzer, Anna Maria Coclite   +4 more
doaj   +1 more source

Plasma Enhanced Atomic Layer Deposition of Iridium Oxide for Application in Miniaturized Neural Implants

Current Directions in Biomedical Engineering, 2021
High quality recording of neuronal activities and electrical stimulation require neurotechnical implants with appropriate electrode material. Iridium oxide (IrOx) is an excellent choice of material due to its biocompatibility, low electrochemical ...
Simon Nicolai, Asplund Maria, Stieglitz Thomas, Bucher Volker   +3 more
doaj   +1 more source

Plasma power effect on crystallinity and density of AlN films deposited by plasma enhanced atomic layer deposition

Journal of Materials Research and Technology, 2023
Aluminum nitride (AlN) film is a promising material which is used in various fields. In this study, AlN films with different plasma powers were grown by remote plasma atomic layer deposition.
Xiao-Ying Zhang, Duan-Chen Peng, Jia-Hao Yan, Zhi-Xuan Zhang, Yu-Jiao Ruan, Juan Zuo, An Xie, Wan-Yu Wu, Dong-Sing Wuu, Chien-Jung Huang, Feng-Min Lai, Shui-Yang Lien, Wen-Zhang Zhu   +12 more
doaj   +1 more source

Structural, Surface, and Optical Properties of AlN Thin Films Grown on Different Substrates by PEALD

Crystals, 2023
Plasma-enhanced atomic layer deposition was employed to grow aluminum nitride (AlN) thin films on Si (100), Si (111), and c-plane sapphire substrates at 250 °C. Trimethylaluminum and Ar/N2/H2 plasma were utilized as Al and N precursors, respectively. The
Sanjie Liu, Yangfeng Li, Jiayou Tao, Ruifan Tang, Xinhe Zheng   +4 more
doaj   +1 more source

Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition [PDF]

, 2017
Enhancement of the properties of zinc oxide (ZnO)-based Schottky diodes has been explored using a combination of plasma-enhanced atomic layer deposition (PE-ALD) ZnO thin films and silver oxide Schottky contacts deposited by reactive radio-frequency ...
Chalker, PR, Dhanak, VR, Gibbon, JT, Hall, S, Hesp, D, Jin, J, Mitrovic, IZ, Phillips, LJ, Sedghi, N, Shaw, AP, Wrench, J, Zou, J   +11 more
core   +1 more source

Design of a Solid Freeform Fabrication Diamond Reactor [PDF]

, 1990
Solid Freeform Fabrication (SFF) has progressed from the visualization aided stage of computer aided designs (CAD) to rapid prototyping of structural parts.
Marcus, Harris L., Thissell, W.Richards, Tompkins, James   +2 more
core   +1 more source

Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors

IEEE Journal of the Electron Devices Society
The use of the plasma-enhanced atomic layer deposition (ALD) technique for the deposition of HfO2-based ferroelectrics has received attention in recent years primarily due to wake-up free operation.
Chinsung Park, Prasanna Venkat Ravindran, Dipjyoti Das, Priyankka Gundlapudi Ravikumar, Chengyang Zhang, Nashrah Afroze, Lance Fernandes, Yu Hsin Kuo, Jae Hur, Hang Chen, Mengkun Tian, Winston Chern, Shimeng Yu, Asif Islam Khan   +13 more
doaj   +1 more source

Optimization of $Al/AlO_x/Al$-Layer Systems for Josephson Junctions from a Microstructure Point of View [PDF]

, 2019
$Al/AlO_x/Al$-layer systems are frequently used for Josephson junction-based superconducting devices. Although much work has been devoted to the optimization of the superconducting properties of these devices, systematic studies on influence of ...
Fritz, S., Gerthsen, D., Radtke, L., Schneider, R., Weides, M.   +4 more
core   +2 more sources

Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)

MATEC Web of Conferences, 2016
This paper presents the plasma-enhanced atomic layer deposition (PEALD) of titanium nitride (TiN) using the organic precursor tetrakis(ethylmethylamido)titanium (TEMAT), with remote ammonia (NH3) plasma as reactant gas.
Chen Z.X., Li X., Li W.-M., Lo G.-Q.
doaj   +1 more source

Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs [PDF]

, 2015
Al2O3 films deposited by thermal and plasma-assisted atomic layer deposition (ALD) were evaluated as passivation layers for InAlN/AlN/GaN HEMTs. As a reference, a comparison was made with the more conventional plasma enhanced chemical vapor deposition ...
Aubry, R., di Forte-Poisson, M. A., Gamarra, P., Hjelmgren, Hans, Lacam, C., Malmros, Anna, Rorsman, Niklas, Thorsell, Mattias, Tordjman, M.   +8 more
core   +1 more source