Results 41 to 50 of about 360 (212)

Current Status and Challenges in Data Collection for Aerospace Coatings Deposited by Plasma Spraying

open access: yesAdvanced Engineering Materials, EarlyView.
An innovative approach has been integrated into the GRENAT project to optimize plasma spraying and coating performance. Raw materials are accelerated and melted in the plasma generated by torches, creating coatings. Monitoring sensors collect process data which are combined with ex situ characterization data.
Lila Randriamananjara   +8 more
wiley   +1 more source

Interplay of Precursor and Plasma for The Deposition of HfO2 via PEALD: Film Growth and Dielectric Properties

open access: yesAdvanced Materials Interfaces, 2023
HfO2 thin films are appealing for microelectronic applications such as high‐κ dielectric layers, memristors, and ferroelectric memory devices. To fulfill the different requirements of each application, the properties of the deposited material need to be ...
Florian Preischel   +6 more
doaj   +1 more source

Plasma-enhanced atomic layer deposition of titanium vanadium nitride [PDF]

open access: yesJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2018
The authors have studied the plasma-enhanced atomic layer deposition of TixV1−xN using tetrakis(dimethylamido) titanium, tetrakis(dimethylamido) vanadium, and nitrogen plasma. Through modification of the ratio of TiN to VN deposition cycles, the value of x can be well controlled.
Mark J. Sowa   +7 more
openaire   +1 more source

Plasma-enhanced atomic layer deposition of Zn-doped GaP

open access: yesJournal of Physics: Conference Series, 2021
Abstract The formation of p-type GaP by plasma-enhanced atomic layer deposition at a temperature of 380 °C has been studied. The incorporation of Zn impurity was detected by the method of glow discharge optical emission spectroscopy (GDOES).
A V Uvarov   +4 more
openaire   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Plasma-Enhanced Atomic Layer Deposition of TiAlN: Compositional and Optoelectronic Tunability

open access: yesACS Applied Materials & Interfaces, 2019
Titanium nitride (TiN) is a unique refractory plasmonic material, the nanocomposites and alloys of which provide further opportunities to tailor its optical and photonic properties. We prepare TiAlN films of continuously variable compositions through the systematic variation of TiN versus AlN cycle ratio in plasma-enhanced atomic layer deposition ...
Nari Jeon   +3 more
openaire   +3 more sources

Composites of Shellac and Silver Nanowires as Flexible, Biobased, and Corrosion‐Resistant Transparent Conductive Electrodes

open access: yesAdvanced Functional Materials, EarlyView.
Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein   +4 more
wiley   +1 more source

Plasma-Enhanced Atomic Layer Deposition of Hematite for Photoelectrochemical Water Splitting Applications

open access: yesCrystals
Hematite (α-Fe2O3) is one of the most promising and widely used semiconductors for application in photoelectrochemical (PEC) water splitting, owing to its moderate bandgap in the visible spectrum and earth abundance.
Thom R. Harris-Lee   +5 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Irradiation‐Induced Spin Bath Evolution and as‐Grown Hydrogen Defects in CVD Diamond Revealed by NV‐Based DEER Spectroscopy

open access: yesAdvanced Functional Materials, EarlyView.
Here, we provide the reader with the current state of the art in the fabrication of high‐T2‐coherence diamond, optimized through the use of double electron–electron resonance (DEER) spectroscopy. We reveal the main as well as yet unidentified spin defects, the reduction of which is essential for reducing the spin bath and fabricating materials for ...
Olga Rubinas   +6 more
wiley   +1 more source

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