Results 61 to 70 of about 17,661 (114)

Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies. [PDF]

ACS Appl Mater Interfaces, 2018
Faraz T, Knoops HCM, Verheijen MA, van Helvoirt CAA, Karwal S, Sharma A, Beladiya V, Szeghalmi A, Hausmann DM, Henri J, Creatore M, Kessels WMM.   +11 more
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AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition. [PDF]

Nanoscale Res Lett, 2017
Tzou AJ, Chu KH, Lin IF, Østreng E, Fang YS, Wu XP, Wu BW, Shen CH, Shieh JM, Yeh WK, Chang CY, Kuo HC.   +11 more
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Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS. [PDF]

Materials (Basel), 2015
Ratzsch S, Kley EB, Tünnermann A, Szeghalmi A.   +3 more
europepmc   +1 more source

Interfacial, Electrical, and Band Alignment Characteristics of HfO₂/Ge Stacks with In Situ-Formed SiO₂ Interlayer by Plasma-Enhanced Atomic Layer Deposition. [PDF]

Nanoscale Res Lett, 2017
Cao YQ, Wu B, Wu D, Li AD.
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Advantages and challenges of plasma enhanced atomic layer deposition

, 2011
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Atmospheric-pressure plasma-enhanced spatial Atomic Layer Deposition

, 2021
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Thermal and plasma enhanced atomic layer deposition on powders and particles

, 2016
Rampelberg, Geert, Cremers, Véronique, Longrie, Delphine, Deduytsche, Davy, Haemers, Johan, Detavernier, Christophe   +5 more
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Plasma-enhanced atomic layer deposition of transition metal phosphates

, 2017
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Patterned deposition by plasma enhanced spatial atomic layer deposition

physica status solidi (RRL) – Rapid Research Letters, 2011
AbstractAn atmospheric pressure plasma enhanced atomic layer deposition reactor has been developed, to deposit Al2O3 films from trimethyl aluminum and an He/O2 plasma. This technique can be used for 2D patterned deposition in a single in‐line process by making use of switched localized plasma sources.
Poodt, P.W.G., Kniknie, B., Branca, A,, Winands, G.J.J., Roozeboom, F.   +4 more
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Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films

Chemistry of Materials, 2011
Thermal properties of various silver precursors known in the literature were evaluated in order to discover which precursor is the most suitable one for plasma-enhanced atomic layer deposition (PEALD) of silver thin films. Ag(fod)(PEt3) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) was found to be the best choice. Using Ag(fod)(PEt3)
Sajavaara Timo, Niinistö Jaakko, Kariniemi Maarit, Kemell Marianna, Leskelä Markku, Ritala Mikko, Hatanpää Timo, Sajavaara Timo   +7 more
openaire   +4 more sources