Results 71 to 80 of about 17,661 (114)

Plasma-enhanced atomic layer deposition of BaTiO3

Scripta Materialia, 2016
Abstract Among high-k thin films, perovskite BaTiO3 (BTO) is an attractive candidate due to its exceptionally high dielectric constant. In contrast to conventional atomic layer deposition (ALD), plasma-enhanced ALD (PEALD) has several advantages such as lower process temperature, improved film quality and the deposition of a wider spectrum of ...
Peter Schindler, Yongmin Kim, Dickson Thian, Jihwan An, Fritz B. Prinz   +4 more
openaire   +1 more source

Plasma-Enhanced Atomic Layer Deposition of Ni

Japanese Journal of Applied Physics, 2010
Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3or H2plasma as a reactant was comparatively investigated. PE-ALD Ni using NH3plasma showed higher growth rate, lower resistivity, and lower C content than that using H2plasma.
Lee, HBR, Bang, SH, Kim, WH, Gu, GH, Lee, YK, Chung, TM, Kim, CG, Park, CG, Kim, H   +8 more
openaire   +2 more sources

Plasma-enhanced atomic layer deposition of tungsten nitride

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2016
Tungsten nitride (WN) has potential as an interconnect barrier film. Deposition of WN films with bis(tert-butylimido)bis(dimethylamido)tungsten utilizing plasma-enhanced atomic layer deposition has been investigated over a temperature range of 100–400 °C employing N2, H2/N2, and NH3 remote plasmas.
Mark J. Sowa, Yonas Yemane, Fritz B. Prinz, J Provine   +3 more
openaire   +1 more source

Plasma-enhanced atomic layer deposition for plasmonic TiN

Nanophotonic Materials XIII, 2016
This work presents the low temperature plasma-enhanced atomic layer deposition (PE-ALD) of TiN, a promising plasmonic synthetic metal. The plasmonics community has immediate needs for alternatives to traditional plasmonic materials (e.g. Ag and Au), which lack chemical, thermal, and mechanical stability.
Lauren M. Otto, Aaron T. Hammack, Shaul Aloni, D. Frank Ogletree, Deirdre L. Olynick, Scott Dhuey, Bethanie J. H. Stadler, Adam M. Schwartzberg   +7 more
openaire   +1 more source

Plasma-enhanced atomic layer deposition of zinc phosphate

Journal of Non-Crystalline Solids, 2016
Abstract Zinc phosphate thin films were grown by plasma-enhanced atomic layer deposition (ALD) using a sequence of trimethyl phosphate (TMP, Me 3 PO 4 ) plasma, O 2 plasma, and diethylzinc (DEZn, Et 2 Zn) exposures. The film growth was monitored by in-situ spectroscopic ellipsometry.
T. Dobbelaere, M. Minjauw, T. Ahmad, P.M. Vereecken, C. Detavernier   +4 more
openaire   +1 more source

Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2015
Atomic layer deposition (ALD) relies on a sequence of self-limiting surface reactions for thin film growth. The effect of non-ALD side reactions, from insufficient purging between pulses and from precursor self-decomposition, on film growth is well known.
Triratna Muneshwar, Ken Cadien
openaire   +1 more source

Properties of HfAlO film deposited by plasma enhanced atomic layer deposition

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2013
Abstract Plasma enhanced atomic layer deposition (PEALD) method can reduce film growing temperature, and allow in situ plasma treatment. In this work, HfAlO and HfO2 films were deposited with PEALD at 160 °C. Microstructure analysis showed that both films were amorphous after rapid thermal annealing (RTA) treatment, and HfAlO sample showed better ...
Duo Cao, Xinhong Cheng, Tingting Jia, Li Zheng, Dawei Xu, Zhongjian Wang, Chao Xia, Yuehui Yu   +7 more
openaire   +1 more source

Properties of Aluminum Silicate Deposited by Plasma Enhanced Atomic Layer Deposition

ECS Meeting Abstracts, 2006
Abstract not Available.
Jung Wook Lim, Sun Jin Yun, Jin Ho Lee
openaire   +1 more source

Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment

Microelectronic Engineering, 2012
Plasma-enhanced atomic layer deposition was explored to produce thin HfO"2 films, where oxygen plasma acted as oxidant. The interfacial layer (IL) was controlled by in situ pre-oxygen plasma treatment (PRO) and pre-ammonia plasma treatment (PRN). Post oxygen plasma treatment (POP) to HfO"2 film was in situ executed.
Dawei Xu, Xinhong Cheng, Youwei Zhang, Zhongjian Wang, Chao Xia, Duo Cao, Yuehui Yu, DaShen Shen   +7 more
openaire   +1 more source

Characteristics of ZrAlO Films Deposited by Plasma Enhanced Atomic Layer Deposition

ECS Meeting Abstracts, 2006
Abstract not Available.
Sun-Jin Yun, Jung-Wook Lim, Hyun-Tak Kim
openaire   +1 more source