Results 71 to 80 of about 360 (212)

Polymer Substrates for Flexible Sensors: Advances and Contributions to Smart Agriculture

Advanced Functional Materials, EarlyView.
This review comprehensively summarizes recent advances in polymer‐based flexible sensors for smart agriculture, focusing on polymer substrate design, interface engineering, and applications in soil, plant, animal, aquaculture, and post‐harvest monitoring.
Yihui Li, Zhangzheng Xiao, Zheng Yan, Adnan Raza Altaf, Qun Song, Dingding Yao, Afshan Sohail, Yixin Wang, Wenxiu Ma, Shanjun Li, Yaohui Chen, Peiwen Liu, Kai Zhang   +12 more
wiley   +1 more source

Characterization of HZO Films Fabricated by Co-Plasma Atomic Layer Deposition for Ferroelectric Memory Applications

Nanomaterials
Plasma-enhanced atomic layer deposition (ALD) is a common method for fabricating Hf0.5Zr0.5O2 (HZO) ferroelectric thin films that can be performed using direct-plasma (DP) and remote-plasma (RP) methods.
Won-Ji Park, Ha-Jung Kim, Joung-Ho Lee, Jong-Hwan Kim, Sae-Hoon Uhm, So-Won Kim, Hee-Chul Lee   +6 more
doaj   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, EarlyView.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Nanoscale Research Letters, 2017
We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 ...
An-Jye Tzou, Kuo-Hsiung Chu, I-Feng Lin, Erik Østreng, Yung-Sheng Fang, Xiao-Peng Wu, Bo-Wei Wu, Chang-Hong Shen, Jia-Ming Shieh, Wen-Kuan Yeh, Chun-Yen Chang, Hao-Chung Kuo   +11 more
doaj   +1 more source

Tunable Complementary Doping Strategy Enables High‐Performance Homo‐Channel CMOS in Monolayer WSe2

Advanced Functional Materials, EarlyView.
Polarity‐selective modulation enables a homo‐channel WSe2 CMOS platform from a single 2D semiconductor. MoOx and AlN tune WSe2 toward p‐ and n‐type operation, respectively, yielding complementary FETs and inverters with balanced switching, high voltage gain, low static power, and promising scalability for 2D logic integration.
Kuan‐Hsiang Chiu, Wen‐Chia Wu, His‐Yu Chen, Chien‐Chih Liu, Ze‐Rui Lin, Chiung‐Yuan Lin, Chenming Hu, Chao‐Hsin Chien   +7 more
wiley   +1 more source

Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor

Nanoscale Research Letters, 2019
For advanced Cu interconnect technology, Co films have been widely investigated to serve as the liner and seed layer replacement because of a better wettability to Cu than Ta.
Bao Zhu, Zi-Jun Ding, Xiaohan Wu, Wen-Jun Liu, David Wei Zhang, Shi-Jin Ding   +5 more
doaj   +1 more source

Ultrafast Thermal Shock Synthesis of CuNiSnLa Medium‐Entropy Metallic Glass for Sustainable Nitrogen Fixation via Plasma‐Coupled Electrocatalysis

Advanced Functional Materials, EarlyView.
This work introduces an ultrafast thermal shock strategy to synthesize a CuNiSnLa medium‐entropy metallic glass (MEMG). The rapid heating and cooling process generates a robust, highly active catalyst for electrocatalytic nitrate reduction to ammonia (NRA).
Hongbo Chen, Peng‐Jun Deng, Yang Liu, Shenglong Huang, Shuo Sun, Haoxuan Li, Jiajia Lu, Panagiotis Tsiakaras   +7 more
wiley   +1 more source

Low-temperature synthesis of gallium nitride thin films using plasma-enhanced atomic layer deposition for nanoelectronics [PDF]

APL Materials
In this paper, we report on the low-temperature synthesis of gallium nitride (GaN) thin films using plasma-enhanced atomic layer deposition and fabrication of AlN/GaN field-effect transistors for the application of microelectronics.
Zhigang Xiao, Baraka Chimba, Ibraheem Giwa, Fabian Sanchez, Kim Kisslinger, Fernando Camino, Dmytro Nykypanchuk, Xiao Tong   +7 more
doaj   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source