Results 71 to 80 of about 96,312 (290)

Progress in Nanoporous Templates: Beyond Anodic Aluminum Oxide and Towards Functional Complex Materials [PDF]

open access: yes, 2019
Successful synthesis of ordered porous, multi-component complex materials requires a series of coordinated processes, typically including fabrication of a master template, deposition of materials within the pores to form a negative structure, and a third
Nonnenmann, Stephen S., Zhou, Zimu
core   +3 more sources

Corrosion and Process Analysis of a Preoxidized MgO Recyclate‐Based Cermet Anode in Laboratory‐Scale Na‐Cryolite Molten Salt Electrolysis of Aluminum at 1000°C

open access: yesAdvanced Engineering Materials, EarlyView.
EDX elemental map of the pre‐oxidized MgO–steel cermet anode cross section after electrolysis. The development of inert anodes for aluminum electrolysis remains challenging due to the high corrosivity of cryolite‐based melts at 950°C–1000°C. This study investigates the corrosion and process behavior of a carbon‐free MgO–steel cermet anode derived from ...
Alexander Adamczyk   +7 more
wiley   +1 more source

Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric

open access: yes, 2005
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures.
Lai, K.   +6 more
core   +1 more source

Characterization of Macro/Microstructure and Corrosion Resistance of Austenitic Gas Tungsten Arc Welding Cladding

open access: yesAdvanced Engineering Materials, EarlyView.
Cladding is a proven method that boosts the surface qualities of mechanical parts by applying a layer of more durable material over a base substrate. This work responds to the needs of offshore and pressure vessels sectors by focusing on cladding a super austenitic steel onto low‐carbon steel through gas tungsten arc welding.
E. J. da Cruz Junior   +6 more
wiley   +1 more source

Unlocking Ferroelectricity in Scalable AlBN Films via Plasma‐Enhanced Atomic Layer Deposition

open access: yesAdvanced Electronic Materials
Ferroelectric metal nitride thin films, particularly AlScN, have recently emerged as transformative materials for next‐generation electronics, owing to their high polarization, tunable coercive fields, exceptional endurance, and thermal stability.
Jayeong Lee   +9 more
doaj   +1 more source

Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times

open access: yesAIP Advances, 2021
Silicon dioxide (SiO2) thin films were prepared by plasma-enhanced atomic layer deposition (PEALD) at a low temperature of 150 °C using di-isopropylaminosilane and oxygen with different plasma times. While SiO2 films deposited with a short plasma time of
Taehyeon Kim   +5 more
doaj   +1 more source

Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor [PDF]

open access: yes, 2013
Two novel N-heterocyclic carbene (NHC)-containing copper(I) amides are reported as atomic layer deposition (ALD) precursors. 1,3-Diisopropyl-imidazolin-2-ylidene copper hexamethyldisilazide (1) and 4,5-dimethyl-1,3-diisopropyl-imidazol-2-ylidene copper ...
Barry, Seán T.   +8 more
core   +1 more source

Incorporation of Selenium into Sol–Gel‐Derived Bioactive Glass: Influence on Glass Structure, Bioactivity, and its Selective Cytotoxicity

open access: yesAdvanced Engineering Materials, EarlyView.
Selenium was incorporated into a sol–gel‐derived bioactive glass to enable sustained therapeutic ion release. The selenium‐containing glass preserved bioactivity while selectively inducing cytotoxicity in osteosarcoma cells and maintaining osteoblastic viability.
Breno Rocha Barrioni   +7 more
wiley   +1 more source

Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

open access: yesAIP Advances, 2016
The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films
J. Provine   +6 more
doaj   +1 more source

Correlating the nanostructure of Al-oxide with deposition conditions and dielectric contributions of two-level systems in perspective of superconducting quantum circuits [PDF]

open access: yes, 2017
This work is concerned with Al/Al-oxide(AlO$_{x}$)/Al-layer systems which are important for Josephson-junction-based superconducting devices such as quantum bits.
Fritz, S.   +6 more
core   +3 more sources

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