Results 81 to 90 of about 5,793,656 (288)

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

Advanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen, Susanne Selle, Michael S. Bar, Michael Lorenz, Holger von Wenckstern, Marius Grundmann   +5 more
wiley   +1 more source

Plasma atomic layer deposition [PDF]

, 2019
Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma.

core  

Atomic layer deposition of Ru from CpRu(CO2)Et using O2 gas and O2 plasma [PDF]

, 2011
The metalorganic precursor cyclopentadienylethyl(dicarbonyl)ruthenium (CpRu(CO)2Et) was used to develop an atomic layer deposition (ALD) process for ruthenium. O2 gas and O2 plasma were employed as reactants.
Verkuijlen, ROF, Kessels, WMM Erwin, Verkuijlen, R. O. F., Verkuijlen, R.O. F., Roozeboom, F Fred, Langereis, E., Rushworth, S.A., Roozeboom, F., W. M. M. Kessels, Leick, N Noémi, Leick, N., Lamagna, L., Sanden, van de, M.C.M., E. Langereis, L. Lamagna, Sanden, MCM Richard van de, S. Rushworth, Langereis, E Erik, Rushworth, SA, M. C. M. van de Sanden, N. Leick, R. O. F. Verkuijlen, Kessels, W.M. M., Verkuijlen, R.O.F., van de Sanden, M.C. M., Rushworth, S., F. Roozeboom, Lamagna, L Luca, Kessels, W.M.M., Kessels, W. M. M.   +29 more
core   +2 more sources

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition

, 2017
There is a great interest in various branches of the advanced materials industry for the development of novel methods (and improvements to existing ones) for the deposition of conformal ultrathin metallic films.
Bosnick, ken, Hogan, James D., Cui, Kai, Motamedi, Pouyan, Cadien, Ken   +4 more
core   +1 more source

Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry [PDF]

, 2005
In situ spectroscopic ellipsometry has been employed to determine the properties of titanium nitride (TiN) films during plasma-assisted atomic layer deposition by alternating TiCl4 precursor dosing and H2–N2 plasma exposure.
Sanden, MCM Richard van de, Kessels, WMM Erwin, Heil, S.B.S., Kemmeren, ALAM, Roozeboom, F Fred, Langereis, E., Roozeboom, F., W. M. M. Kessels, Langereis, E Erik, M. C. M. van de Sanden, A. Kemmeren, S. B. S. Heil, Kemmeren, A., Sanden, van de, M.C.M., F. Roozeboom, Heil, SBS Stephan, Kessels, W.M.M., E. Langereis   +17 more
core   +2 more sources

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition

APL Materials, 2020
Simultaneously inducing preferred crystalline orientation with a strong piezoelectric response in polycrystalline aluminum nitride (AlN) thin films by atomic layer deposition is a technical challenge due to the upscaling of the integration of ...
Tai Nguyen, Noureddine Adjeroud, Sebastjan Glinsek, Yves Fleming, Jérôme Guillot, Patrick Grysan, Jérôme Polesel-Maris   +6 more
doaj   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Plasma atomic layer deposition [PDF]

, 2018
Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma.

core