Results 81 to 90 of about 360 (212)

Meniscus‐Guided Soft‐Lithographic Assembly of Grid‐Type Molecular Martensite Films for Single‐Crystal‐Like Actuation

Advanced Functional Materials, EarlyView.
A meniscus‐guided microtransfer molding strategy enables scalable fabrication of grid‐type molecular martensite films with b‐axis‐correlated preferential texture. Sequential growth across microchannel intersections creates structurally continuous grids and robust thermoelastic actuation (∼11% strain, > 50 cycles, maximum force density: 7.1 × 109 N m−3).
Sooyeon Ra, Sourabh R. Jagdale, Jin Hyeok Jang, Minwoo Jang, Kyoungtae Hwang, Taewoo Lee, Eun Hui Jeong, Soon Ho Yoon, Byung Joon Moon, Jangyup Son, Dong‐Su Lee, Sukang Bae, Jun Dong Park, Tae‐Wook Kim, Sangmin An, Sang Kyu Park   +15 more
wiley   +1 more source

Tailored Diketopyrrolopyrrole Derivatives for Efficient Deep‐Red Organic Lasers

Advanced Functional Materials, EarlyView.
Tailored diketopyrrolopyrrole derivatives exhibit high stable amplified spontaneous emission with single or dual bands. Incorporated into distributed‐feedback lasers based on one‐ and two‐dimensional dichromated‐gelatin diffractive gratings, these materials provide a robust, flexible platform for integrated organic deep‐red light sources. ABSTRACT Deep‐
Pablo Pasqués‐Gramage, Abelardo Sánchez‐Oliva, Álex Farrando‐Pérez, Pedro G. Boj, M. Victoria Gómez, Ana M. Rodríguez, Pilar Prieto, Rafael Muñoz‐Mármol, Andrew J. Musser, Iván Torres‐Moya, María A. Díaz‐García   +10 more
wiley   +1 more source

Plasma-enhanced atomic layer deposition of Al2O3 on graphene via an in situ-deposited interlayer

Materials Science in Semiconductor Processing
Published by Elsevier Science, Amsterdam [u.a.]
Riazimehr, Sarah, Esteki, Ardeshir, Otto, Martin, Powell, Michael, Rinke, Gordon, Robertz, Bianca, Wang, Zhenxing, Lemme, Max C., Hore, Katie, Knoops, Harm   +9 more
openaire   +2 more sources

Atomically Dispersed Ni Site Catalysts Accelerating Sluggish Sulfur Redox Kinetics in Nonaqueous Zn‐S Batteries

Advanced Functional Materials, EarlyView.
An atomically dispersed Ni catalyst featuring Ni‐N4 coordination is developed as a sulfur host for nonaqueous Zn─S batteries. This configuration modulates the electronic structure to lower activation barriers during rate‐limiting steps and promotes a robust ZnF2‐rich cathode‐electrolyte interphase, thereby accelerating sulfur redox kinetics ...
Junhyuk Ji, Dongwoo Kim, Nuri Moon, Daehwan Kim, Keon Kim, Nahyung Kim, Young Yong Kim, Won Bae Kim   +7 more
wiley   +1 more source

Ferroelectric aluminum−scandium nitride by plasma-enhanced atomic layer deposition under ultrahigh purity conditions

Communications Materials
Wurtzite aluminum–scandium nitride thin films hold strong potential for future electronic and sensing technologies. However, achieving precise control and uniform coverage across complex three-dimensional architectures remains challenging.
Gilbert B. Rayner Jr, Noel O’Toole, Nathaniel Nelson, Bangzhi Liu, Jeffrey Shallenberger, Gregory Muha, Piush Behera, Suraj Cheema, Blaine Johs, Nastazia Moshirfatemi, Daniel Drury, Brendan M. Hanrahan, Glen R. Fox, Nicholas A. Strnad   +13 more
doaj   +1 more source

Imaging the Thickness‐Dependent Formation of Schottky Barriers in Metal–Semiconductor van der Waals Heterostructures

Advanced Functional Materials, EarlyView.
Using nanobeam photoemission, we demonstrate imaging of the in‐plane and out‐of‐plane electric field landscape within a metal–semiconductor van der Waals heterostructure. We provide evidence for Schottky barrier formation that depends on the semiconductor thickness. ABSTRACT Achieving high‐performance optoelectronic devices based on two‐dimensional van
Dario Mastrippolito, Mariarosa Cavallo, Marco Paye, Clement Gureghian, Albin Colle, Jiho Roh, Dipak Maity, Clemence Villefroy, Erwan Dandeu, Herve Cruguel, Stephane Lorcy, Marie Hervé, James K. Utterback, Pavel Dudin, Johan Biscaras, José Avila, Emmanuel Lhuillier, Debora Pierucci   +17 more
wiley   +1 more source

Spatially Regulated Lithium Plating via Li2O‐Rich Interphase Enables Durable Fast‐Charging Hybrid Lithium Batteries

Advanced Functional Materials, EarlyView.
A Li2O‐rich solid electrolyte interphase (SEI) is engineered on graphite through a propylene carbonate‐based electrolyte to spatially regulate Li plating. The homogeneous interphase lowers Li nucleation barriers, promotes conformal Li deposition around graphite particles, and suppresses dendritic accumulation, enabling durable hybrid Li‐ion/Li‐metal ...
Robert Kuphal, Jingjing Liu, Junxiang Liu, Tao Ma, Yi Ding, Mahmood Haq, Satish Udpa, Stephen J. Harris, Chengcheng Fang   +8 more
wiley   +1 more source

Dynamically Actuated Reconfigurable Topographical Surface Enables Active Control of Implant‐Associated Infections

Advanced Functional Materials, EarlyView.
A dynamically actuated reconfigurable topographical surface (DARTS) integrates contact‐mediated bactericidal nanotopography with programmable mechanical actuation to actively disrupt bacterial biofilms. Dynamic surface reconfiguration enhances bacterial killing and suppresses implant‐associated infections in vivo, providing a new strategy for active ...
Mohammad Asadi Tokmedash, Jihun Lee, J. Scott VanEpps, Sungmin Nam, Jouha Min   +4 more
wiley   +1 more source

Domain Engineering and Anisotropic Domain‐Wall Photovoltaic Effects in Ferroelectric SnS

Advanced Functional Materials, EarlyView.
The bulk photovoltaic effect at domain walls in the in‐plane ferroelectric 2D semiconductor SnS is investigated using periodic domain structures. Unlike conventional oxide ferroelectrics, domain walls of SnS do not contribute to photocurrent generation perpendicular to the domain walls.
Ryo Nanae, Satsuki Kitamura, Tomonori Nishimura, Kaito Kanahashi, Tomoaki Kameda, Katsunori Wakabayashi, Redhwan A Moqbel, Ting‐Hsuan Wu, Kung‐Hsuan Lin, Yosuke Ogawa, Eiji Nishibori, Keisuke Shinokita, Kazunari Matsuda, Jui‐Han Fu, Vincent Tung, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio   +17 more
wiley   +1 more source

Reliability Engineering of High‐Mobility IGZO Transistors via Gate Insulator Heterostructures Grown by Atomic Layer Deposition

Advanced Materials Interfaces
The reliability of oxide‐semiconductor (OS) thin‐film transistors (TFTs) is significantly influenced by the gate insulator (GI). During electrical bias stress, the defect sites near the semiconductor/GI interface and/or within the GI may trap electrons ...
Yoon‐Seo Kim, Taewon Hwang, Hye‐Jin Oh, Joon Seok Park, Jin‐Seong Park   +4 more
doaj   +1 more source