Results 81 to 90 of about 17,661 (114)
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Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
Applied Surface Science, 2017Abstract Plasma-enhanced atomic layer deposition (PE-ALD) has many advantages for the deposition of thin films. However, an appropriate control of the plasma frequency in the PE-ALD process is required to reduce the plasma-induced damage of the thin films during deposition. In this study, we comparatively studied the effects of conventional 13.56 MHz,
Kim, Kangsik +3 more
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Characteristics and applications of plasma enhanced-atomic layer deposition
Thin Solid Films, 2011Abstract Atomic layer deposition (ALD) is expected to play an important role in future device fabrication due to various benefits, such as atomic level thickness control and excellent conformality. Plasma enhanced ALD (PE-ALD) allows deposition at significantly lower temperatures with better film properties compared to that of conventional thermal ...
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Room Temperature Copper Seed Layer Deposition by Plasma-Enhanced Atomic Layer Deposition
ECS Transactions, 2011AbaCus, a newly developed fluorine-free precursor has been used for room temperature copper deposition using plasma enhanced chemical vapor deposition (PEALD). This process has been characterized and the film properties investigated in term of composition, deposition rate, resistivity, grain size and platability.
Jiajun Mao +4 more
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006
Ta 2 O 5 films were deposited by plasma-enhanced atomic layer deposition (PEALD) and thermal ALD on native oxide surface (SiOx∕Si). The properties of as-deposited and forming gas annealed films were examined and qualitatively compared with respect to nanostructural, nanochemical, capacitance-voltage and leakage-current–voltage (JL-V), and oxide ...
Diefeng Gu +4 more
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Ta 2 O 5 films were deposited by plasma-enhanced atomic layer deposition (PEALD) and thermal ALD on native oxide surface (SiOx∕Si). The properties of as-deposited and forming gas annealed films were examined and qualitatively compared with respect to nanostructural, nanochemical, capacitance-voltage and leakage-current–voltage (JL-V), and oxide ...
Diefeng Gu +4 more
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Plasma-enhanced atomic layer deposition of Co on metal surfaces
Surface and Coatings Technology, 2015Abstract Co thin films were deposited using plasma-enhanced atomic layer deposition (PE-ALD) on various substrates such as Ru, Ta, SiO2, and Si. The growth characteristics of PE-ALD Co were investigated on the basis of their magnetic and electrical properties analyzed using a vibrating sample magnetometer (VSM) and four-point probe system ...
Jaehong Yoon +3 more
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Plasma‐Enhanced Atomic Layer Deposition of Palladium on a Polymer Substrate
Chemical Vapor Deposition, 2007AbstractIn this paper, a method for the plasma‐enhanced (PE) atomic layer deposition (ALD) of palladium on air‐exposed, annealed poly(p‐xylylene) (Parylene‐N, or PPX) is presented. Palladium is successfully deposited on PPX at 80 °C using a remote, inductively coupled, hydrogen/nitrogen plasma with palladium (II) hexafluoroacetylacetonate (PdII(hfac)2)
G. A. Ten Eyck +5 more
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Properties of AlN grown by plasma enhanced atomic layer deposition
Applied Surface Science, 2011Abstract The influence of growth parameters on the properties of AlN films fabricated by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia precursors was investigated. The atomic concentrations, refractive index, mass density, crystallinity and surface roughness were studied from the films grown in the temperature range of ...
Bosund, Markus +7 more
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Plasma Enhanced Atomic Layer Deposition of TaN Thin Films
ECS Meeting Abstracts, 2010Abstract not Available.
Paul Ma, Jiang Lu
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Fabrication of iron carbide by plasma-enhanced atomic layer deposition
Journal of Materials Research, 2019Abstract
Xu Tian +7 more
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Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
Electrochemical and Solid-State Letters, 2004This work was supported by the project of National Research Laboratory ~NRL!. Korea Advanced Institute of Science and Technology assisted in meeting the publication costs of this article.
Kwon, OK, Kwon, SH, Park, HS, Kang, SW
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