Results 81 to 90 of about 17,661 (114)
Some of the next articles are maybe not open access.

Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition

Applied Surface Science, 2017
Abstract Plasma-enhanced atomic layer deposition (PE-ALD) has many advantages for the deposition of thin films. However, an appropriate control of the plasma frequency in the PE-ALD process is required to reduce the plasma-induced damage of the thin films during deposition. In this study, we comparatively studied the effects of conventional 13.56 MHz,
Kim, Kangsik   +3 more
openaire   +2 more sources

Characteristics and applications of plasma enhanced-atomic layer deposition

Thin Solid Films, 2011
Abstract Atomic layer deposition (ALD) is expected to play an important role in future device fabrication due to various benefits, such as atomic level thickness control and excellent conformality. Plasma enhanced ALD (PE-ALD) allows deposition at significantly lower temperatures with better film properties compared to that of conventional thermal ...
openaire   +1 more source

Room Temperature Copper Seed Layer Deposition by Plasma-Enhanced Atomic Layer Deposition

ECS Transactions, 2011
AbaCus, a newly developed fluorine-free precursor has been used for room temperature copper deposition using plasma enhanced chemical vapor deposition (PEALD). This process has been characterized and the film properties investigated in term of composition, deposition rate, resistivity, grain size and platability.
Jiajun Mao   +4 more
openaire   +1 more source

Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006
Ta 2 O 5 films were deposited by plasma-enhanced atomic layer deposition (PEALD) and thermal ALD on native oxide surface (SiOx∕Si). The properties of as-deposited and forming gas annealed films were examined and qualitatively compared with respect to nanostructural, nanochemical, capacitance-voltage and leakage-current–voltage (JL-V), and oxide ...
Diefeng Gu   +4 more
openaire   +1 more source

Plasma-enhanced atomic layer deposition of Co on metal surfaces

Surface and Coatings Technology, 2015
Abstract Co thin films were deposited using plasma-enhanced atomic layer deposition (PE-ALD) on various substrates such as Ru, Ta, SiO2, and Si. The growth characteristics of PE-ALD Co were investigated on the basis of their magnetic and electrical properties analyzed using a vibrating sample magnetometer (VSM) and four-point probe system ...
Jaehong Yoon   +3 more
openaire   +1 more source

Plasma‐Enhanced Atomic Layer Deposition of Palladium on a Polymer Substrate

Chemical Vapor Deposition, 2007
AbstractIn this paper, a method for the plasma‐enhanced (PE) atomic layer deposition (ALD) of palladium on air‐exposed, annealed poly(p‐xylylene) (Parylene‐N, or PPX) is presented. Palladium is successfully deposited on PPX at 80 °C using a remote, inductively coupled, hydrogen/nitrogen plasma with palladium (II) hexafluoroacetylacetonate (PdII(hfac)2)
G. A. Ten Eyck   +5 more
openaire   +1 more source

Properties of AlN grown by plasma enhanced atomic layer deposition

Applied Surface Science, 2011
Abstract The influence of growth parameters on the properties of AlN films fabricated by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia precursors was investigated. The atomic concentrations, refractive index, mass density, crystallinity and surface roughness were studied from the films grown in the temperature range of ...
Bosund, Markus   +7 more
openaire   +2 more sources

Plasma Enhanced Atomic Layer Deposition of TaN Thin Films

ECS Meeting Abstracts, 2010
Abstract not Available.
Paul Ma, Jiang Lu
openaire   +1 more source

Fabrication of iron carbide by plasma-enhanced atomic layer deposition

Journal of Materials Research, 2019
Abstract
Xu Tian   +7 more
openaire   +1 more source

Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films

Electrochemical and Solid-State Letters, 2004
This work was supported by the project of National Research Laboratory ~NRL!. Korea Advanced Institute of Science and Technology assisted in meeting the publication costs of this article.
Kwon, OK, Kwon, SH, Park, HS, Kang, SW
openaire   +2 more sources

Home - About - Disclaimer - Privacy