Results 111 to 120 of about 5,793,656 (288)

Advances in Solution‐Processed Textile Triboelectric Nanogenerators: Ink Formation, Processing Strategies, Applications, and Challenges

open access: yesAdvanced Functional Materials, EarlyView.
Advanced ink systems for solution‐processed textile triboelectric nanogenerators are systematically summarized, spanning conductive, tribo‐negative, and tribo‐positive layers. By connecting ink chemistry, deposition methods, and device function, the present review reveals the key governing principles of solution development and highlights practical ...
Xinlong Sun, Stephen Beeby
wiley   +1 more source

Room-temperature atomic layer deposition of platinum

open access: yes, 2013
Plasma-assisted atomic layer deposition (ALD) processes were developed for the deposition of platinum films at room temperature. High-quality, virtually pure films with a resistivity of 18–24 µO cm were obtained for processes consisting of MeCpPtMe3 ...
Bol, AA Ageeth   +10 more
core   +1 more source

A Holistic Platform Approach for Developing Robust Pulmonary mRNA Delivery: Integrating Novel Phenolic Acid‐Derived Ionizable Lipids and Device Engineering

open access: yesAdvanced Functional Materials, EarlyView.
An integrated pulmonary mRNA delivery platform combining novel biodegradable syringic acid‐derived ionizable lipids, design‐of‐experiments formulation optimization, and vibrating‐mesh nebulizer engineering enabled stable aerosolization and efficient lung delivery.
Neha Kaushal   +21 more
wiley   +1 more source

Plasma-enhanced atomic layer deposition of Al2O3 on graphene via an in situ-deposited interlayer

open access: yesMaterials Science in Semiconductor Processing
Published by Elsevier Science, Amsterdam [u.a.]
Riazimehr, Sarah   +9 more
openaire   +2 more sources

Studies on enhanced OLED performance using Al2O3 buffer layer by atomic layer deposition

open access: yes, 2012
 It has been found that introduction of buffer layers between organic holes transport layer and anode layer plays an important role in improving device stability and hole injection efficiency.
Z. Cui(崔铮)   +2 more
core  

Degradation of the Deposition Blocking Layer During Area-Selective Plasma-Enhanced Atomic Layer Deposition of Cobalt

open access: yes, 2010
The effects of plasma on the degradation of the deposition blocking layer during area-selective atomic layer deposition were investigated.
Kim, H   +6 more
core   +1 more source

Designing Vanadium‐Based Oxide Electrocatalysts for Water Splitting: Experimental and Mechanistic Insights with Machine Learning

open access: yesAdvanced Functional Materials, EarlyView.
This review establishes structure‐property‐mechanism relationships across six modification strategies for V‐based oxide water‐splitting electrocatalysts: lattice engineering, heteroatom doping, interface engineering, carbon‐based hybridization, morphology engineering, and surface reconstruction and pre‐catalyst design, where dissolution is reframed as ...
Youness El Issmaeli   +4 more
wiley   +1 more source

Ferroelectric aluminum−scandium nitride by plasma-enhanced atomic layer deposition under ultrahigh purity conditions

open access: yesCommunications Materials
Wurtzite aluminum–scandium nitride thin films hold strong potential for future electronic and sensing technologies. However, achieving precise control and uniform coverage across complex three-dimensional architectures remains challenging.
Gilbert B. Rayner Jr   +13 more
doaj   +1 more source

Architecture‐Driven Functional Coupling in Vertically Aligned Nanocomposites

open access: yesAdvanced Functional Materials, EarlyView.
Vertically aligned nanocomposites define a growth‐engineered architecture in which vertical interfaces, strain fields, defect pathways, and phase connectivity are created simultaneously. This review shows how these architectural features couple ferroic, optical, ionic, electrochemical, and device responses, establishing design rules and open challenges
Md Shatil Islam‐Shanto   +4 more
wiley   +1 more source

Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films and Heterostructures: Mechanisms and Applications

open access: yesCrystals
Group III-nitride semiconductors (GaN, AlN, InN) serve as foundational materials for modern optoelectronics, high-frequency microelectronics, and next-generation energy harvesting devices.
Sanjie Liu   +10 more
doaj   +1 more source

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