Results 101 to 110 of about 5,793,656 (288)

Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension [PDF]

, 2019
As we enter an era of atomic scale devices, there is a strict need for precise control over the thickness and properties of materials em-ployed in device fabrication [1,2].
Knoops, Harm, Knoops, Harm; id_orcid, Faraz, Tahsin, Kessels, Erwin   +3 more
core   +1 more source

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Silicon Dioxide and Aluminum Oxide

, 2019
Atomic layer deposition (ALD) is a powerful deposition technique for the fabrication of highly conformal and precise thickness-controlled films. Recently, there has been a growing interest in low-temperature (< 100˚C) ALD because of the emerging ...
Zhu, Zhen
core   +1 more source

Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy [PDF]

, 2008
The surface groups created during plasma-assisted atomic layer deposition (ALD) of Al2O3 were studied by infrared spectroscopy. For temperatures in the range of 25–150 °C, –CH3 and –OH were unveiled as dominant surface groups after the Al(CH3)3precursor ...
Sanden, MCM Richard van de, Keijmel, J Jeroen, Kessels, WMM Erwin, Langereis, E., Sanden, van de, M.C.M., W. M. M. Kessels, Langereis, E Erik, M. C. M. van de Sanden, Kessels, W.M.M., E. Langereis, Keijmel, J., J. Keijmel   +11 more
core   +2 more sources

High‐Speed Photoresponse of CVD‐Grown Lateral TMD Heterostructures

Advanced Functional Materials, EarlyView.
Internal electric fields generated by p‐n junctions and asymmetric Schottky barriers enhance the photoresponse speed in CVD‐grown monolayer TMD lateral heterostructures. This results in a 1.5‐2 orders of magnitude reduction in rise and fall times for optimized device configurations compared to homogeneous single‐material devices, enabling bandwidths ...
Mario Martin, Axel Printschler, William Roberts, Jonas L. Hiller, Patrick Michel, Martin Eberle, Marco Hammer, Md Tarik Hossain, Andrey Turchanin, Marcus Scheele   +9 more
wiley   +1 more source

Melanin's Role in Balancing Mechanical Strength and Reproductive Output in Environmentally Stressed Fungal Spores

Advanced Functional Materials, EarlyView.
Melanin content directly controls fungal spore mechanical properties, with pigmented spores achieving rupture forces two orders of magnitude higher than hyaline spores. Environmental stress drives this quantity‐quality tradeoff; stressed species invest energy in melanin‐reinforced, mechanically superior thick‐walled, super‐hydrophobic spores, while ...
Atul Agrawal, Steven E. Naleway
wiley   +1 more source

Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma [PDF]

, 2018
The growth of tungsten oxide (WO3) thin films by atomic layer deposition (ALD) offers numerous merits including atomic-scale thickness control at low deposition temperatures.
Bol, AA Ageeth, Kessels, WMM Erwin, Balasubramanyam, S, Sharma, A Akhil, Balasubramanyam, S., Vandalon, V., Vandalon, V Vincent, Bol, A.A., Knoops, H.C.M.; id_orcid, Knoops, H.C.M., Sharma, A., Knoops, HCM Harm, Kessels, W.M.M.   +12 more
core   +4 more sources

CO2‐to‐CO Conversion in a Gas‐Fed, Zero‐Gap, PEM Electrolyzer Enabled by Polycations and Nitrogen‐Doped Carbon‐Supported Cobalt Nanoparticles

Advanced Functional Materials, EarlyView.
A gas‐fed, zero‐gap, PEM CO2 electrolyzer is realized by incorporating PDDA+ ions onto the carbonaceous Co/N‐C electrocatalyst, with gaseous H2 and CO2 fed into the anode and cathode, respectively. Operating without an aqueous electrolyte, the system sustains a peak FECO of 65.1% at 100 mA cm−2. ABSTRACT Electrochemical carbon dioxide reduction (ECO2R)
Yuen Leong Chow, Hsi‐Wen Wu, Aimin Li, Yalou Guo, Duhong Chen, Jie Zhang, Paul A. Webley   +6 more
wiley   +1 more source

Towards Plasma Enhanced Atomic Layer Deposition

, 2023
The fabrication of microelectronics relies on thin film technologies. As the demand for improved performance of microchips continues to escalate, atomic layer deposition (ALD) has emerged as a crucial technique in enabling precise and controlled thin ...
Jen, Wesley, KC, Sivagya, Graugnard, Elton, Hues, Steven   +3 more
core  

Enhanced Ferroelectric Phase Formation via Local Structure Modification in the Pre‐Crystalline State of Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Hafnium zirconium oxide thin films are grown using plasma‐enhanced atomic layer deposition with the addition of an atomic layer annealing (ALA) step. ALA leads to a change in the short‐range structure of the deposit and encourages formation of the ferroelectric Pca21 phase. The result is wake‐up‐free performance with films exposed to ALA.
Nicolas K. Lam, Gerald R. Bejger, Waseem A. Wani, Kristina M. Holsgrove, Andrew N. Titus, Niyorjyoti Sharma, Shihao Wang, Keithen Orson, Megan K. Lenox, Liron Shvilberg, Yong Kyu Choi, Ian A. Brummel, Benjamin L. Aronson, Petra Reinke, Quentin Ramasse, Amit Kumar, Brian J. Rodriguez, Christina M. Rost, Jon F. Ihlefeld   +18 more
wiley   +1 more source

Low-temperature synthesis of gallium nitride thin films using plasma-enhanced atomic layer deposition for nanoelectronics [PDF]

APL Materials
In this paper, we report on the low-temperature synthesis of gallium nitride (GaN) thin films using plasma-enhanced atomic layer deposition and fabrication of AlN/GaN field-effect transistors for the application of microelectronics.
Zhigang Xiao, Baraka Chimba, Ibraheem Giwa, Fabian Sanchez, Kim Kisslinger, Fernando Camino, Dmytro Nykypanchuk, Xiao Tong   +7 more
doaj   +1 more source