Results 121 to 130 of about 96,312 (290)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method

AIP Advances, 2019
Titanium dioxide (TiO2) films were deposited by plasma enhanced atomic layer deposition (PE-ALD) system using tetrakis-dimethylamido-titanium (TDMAT) at 250 °C.
Heungseop Song, Donghyuk Shin, Ji-eun Jeong, Heungsoo Park, Dae-Hong Ko   +4 more
doaj   +1 more source

Comparative Study of Thermal and Plasma-Enhanced Atomic Layer Deposition of Iron Oxide Using Bis(N,N'-di-butylacetamidinato)iron(II). [PDF]

Nanomaterials (Basel), 2023
Choi B, Park GW, Jeong JR, Jeon N.
europepmc   +1 more source

Nanothermometry in Living Cells: Physical Limits, Conceptual and Material Challenges

Advanced Functional Materials, EarlyView.
Heat and temperature are fundamental to life. When nanothermometers began probing regions as small as a living cell, they triggered controversial claims of large intracellular temperature gradients. We review physical constraints energy‐conservation, entropy production, thermodynamic fluctuations, and molecular dynamics.
Taras Plakhotnik
wiley   +1 more source

Atomic-Level Sn Doping Effect in Ga₂O₃ Films Using Plasma-Enhanced Atomic Layer Deposition. [PDF]

Nanomaterials (Basel), 2022
Shen Y, Ma HP, Gu L, Zhang J, Huang W, Zhu JT, Zhang QC.   +6 more
europepmc   +1 more source

Artifact‐Minimizing Ultrathin Transparent Electrodes Fabricated via iCVD for In Vivo Optogenetic Stimulation and Neural Signal Monitoring of Primary Visual Cortex

Advanced Functional Materials, EarlyView.
We present ultrathin flexible transparent electrodes through iCVD‐enabled molecular control of 10 nm gold films on poly(dimethylaminomethylstyrene). In vivo validation demonstrated photoelectric artifact reduction vs. opaque electrodes and preservation of natural neural dynamics.
Tae Jin Mun, Minju Kim, Chaesung Kim, Yunyoung Choi, In‐Yeop Baek, Younghak Cho, Gyeongyong Lee, Yerim Jang, Min‐Ho Nam, Wonryung Lee, Maesoon Im, Hyejeong Seong   +11 more
wiley   +1 more source

Reliability Engineering of High‐Mobility IGZO Transistors via Gate Insulator Heterostructures Grown by Atomic Layer Deposition

Advanced Materials Interfaces
The reliability of oxide‐semiconductor (OS) thin‐film transistors (TFTs) is significantly influenced by the gate insulator (GI). During electrical bias stress, the defect sites near the semiconductor/GI interface and/or within the GI may trap electrons ...
Yoon‐Seo Kim, Taewon Hwang, Hye‐Jin Oh, Joon Seok Park, Jin‐Seong Park   +4 more
doaj   +1 more source

Influence of deposition temperature on microstructure and gas-barrier properties of Al₂O₃ prepared by plasma-enhanced atomic layer deposition on a polycarbonate substrate. [PDF]

RSC Adv, 2023
Ren Y, Sun X, Chen L, Wei H, Feng B, Chen J.   +5 more
europepmc   +1 more source

Trifluoromethoxylated Electron Acceptor Enabling Ternary Organic Solar Cells with over 20% Power Conversion Efficiency

Advanced Functional Materials, EarlyView.
ABSTRACT In this work, we introduce a trifluoromethoxy (OCF3) group as a pseudo‐halogen terminal group design for non‐fullerene acceptors, which combines strong inductive electron‐withdrawing ability with moderate resonance donation. The as‐synthesized BTP‐OCF3, when benchmarked against its methoxy analogue BTP‐OCH3, demonstrates narrowed bandgap ...
Chunliang Li, Anhai Liang, Shuwei Qiu, Gavin Ho Ming Ng, Aleksandr Sergeev, Joshua Yuk Lin Lai, Bosen Zou, Xianghao Zeng, Jicheng Yi, Hongxiang Li, Junpo Guo, Wei Liu, Jia Yao, Kam Sing Wong, Zhipeng Kan, Sai Ho Pun, He Yan   +16 more
wiley   +1 more source

Effect of a ZrO₂ Seed Layer on an Hf_0.5Zr_0.5O₂ Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition. [PDF]

Materials (Basel), 2023
Song JN, Oh MJ, Yoon CB.
europepmc   +1 more source