Results 131 to 140 of about 5,793,656 (288)

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

Advanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi, Daniele Zucchelli, Zeinab Hamid, Christina Kousseff, Arup Sarkar, Aristea Pavlou, Zhitian Ling, Somayeh Kashani, Iain McCulloch, Paul W. M. Blom, Fabrizio Torricelli, Paschalis Gkoupidenis   +11 more
wiley   +1 more source

Interface-Engineered, Low-Damage IGZO/HfO₂ Charge-Trapping Memory Devices Fabricated Using a Remote Plasma ALD Process

Micromachines
In this study, charge-trapping memory (CTM) transistors were developed using indium gallium zinc oxide (IGZO) as the oxide semiconductor channel and high-k HfO2 as the charge-trapping layer, aiming for next-generation nonvolatile memory applications.
Inkook Hwang, Hyeonwu Nam, Jiwon Kim, Byungwook Kim, Yongwoon Jang, Wookyung Lee, Minkyun Kang, Changbun Yoon   +7 more
doaj   +1 more source

Effect of a ZrO₂ Seed Layer on an Hf_0.5Zr_0.5O₂ Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition. [PDF]

Materials (Basel), 2023
Song JN, Oh MJ, Yoon CB.
europepmc   +1 more source

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

Advanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu, Yingxue An, Luigi Fabiano, Qifan Li, Qingqing Wang, Feng Zhang, Wenlong Jin, Miao Xiong, Junpeng Ji, Ugo Bruno, Grzegorz Greczynski, Grazia Maria Lucia Messina, Xianjie Liu, Chi‐Yuan Yang, Simone Fabiano   +14 more
wiley   +1 more source

In Vivo Monitoring of Thrombo‐Inflammatory Biomarkers via Molecularly Imprinted Polymer‐Integrated Hydrogel Microneedles

Advanced Materials, EarlyView.
A wearable electrochemical microneedle patch integrates Prussian Blue redox transduction with molecularly imprinted polymer recognition for reagent‐free sampling and detection of thrombo‐inflammatory biomarkers in dermal interstitial fluid. The platform tracks thrombin and inflammatory cytokines with sensitive in vitro, ex vivo, and in vivo performance,
Mahmoud Ayman Saleh, Peyman GhavamiNejad, Arash Khorrami Jahromi, Sanjana Srikant, Sripadh Guptha Yedire, Fatemeh Keyvani, Roozbeh Siavash Moakhar, Sajad Shiekh, Mackenzie Graham, Joe Quadrilatero, Mahla Poudineh, Sara Mahshid   +11 more
wiley   +1 more source

Insights into ALD Growth of Al-Based Dielectric Stack on 4H-SiC

Nanomaterials
An Al2O3/AlN stack deposited via Atomic Layer Deposition (ALD) methods as a gate insulator for silicon carbide (4H-SiC) has been investigated, focusing on the effects of different Al2O3 deposition processes on the nitride layer. In particular, dielectric
Bruno Galizia, Emanuela Schilirò, Patrick Fiorenza, Filippo Giannazzo, Bela Pecz, Zsolt Fogarassy, Fabrizio Roccaforte, Raffaella Lo Nigro   +7 more
doaj   +1 more source

Bottom-up plasma-enhanced atomic layer deposition of SiO₂ by utilizing growth inhibition using NH₃ plasma pre-treatment for seamless gap-fill process. [PDF]

Sci Rep, 2022
Choi Y, Kim T, Lee H, Park J, Park J, Ryu D, Jeon W.   +6 more
europepmc   +1 more source

Low temperature plasma-enhanced atomic layer deposition of metal oxide thin films

, 2009
Many reported ALD processes are carried out at elevated temperatures (> 100 °C), which is problematic for temperature-sensitive substrates. Plasma-enhanced ALD routes may provide a solution, as the ALD temperature window can be extended to lower ...
Langereis, E., Potts, S.E., Stephen E. Potts, M. C. Van de Sanden, Dingemans, G., W. M. Kessels, Sanden, van de, M.C.M., van den Elzen, L.R.J.G., Erik Langereis, Wytze Keuning, Kessels, W.M.M., Luc R. Van den Elzen, Gijs Dingemans, Keuning, W.   +13 more
core   +1 more source

Transparent Perovskite Light‐Emitting Diodes with Conductive Oxide Top Electrodes

Advanced Materials, EarlyView.
Transparent perovskite light‐emitting diodes (TrPeLEDs) enable simultaneous display and transparency, expanding application possibilities. Using a metal oxide buffer layer and pulsed laser deposition, TrPeLEDs with diverse compositions and architectures are demonstrated.
Michele Forzatti, Sergio Martínez‐Saiz, Morena Cervino, Edoardo Stanzani, Sandra Jenatsch, Qingsen Zeng, Joo Sung Kim, Dong‐Hyeok Kim, Eojin Yoon, Tae‐Woo Lee, Daniel Tordera, Henk J. Bolink   +11 more
wiley   +1 more source

n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz

Advanced Materials, EarlyView.
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis, Filip Aniés, Yiyang Yu, Mohammed Ghadiyali, Hendrik Faber, Zhanibek Bizak, Youssef Kabri, Pavlos Tzourmpakis, Suman Mandal, Linqu Luo, Temur Maksudov, Mohamad Insan Nugraha, Harold F. Mazo‐Mantilla, Patrice Vanelle, Julie Broggi, Khaled N. Salama, Udo Schwingenschlögl, Martin Heeney, Atif Shamim, Thomas D. Anthopoulos   +19 more
wiley   +1 more source