High-Performance GaN-Based Green Flip-Chip Mini-LED with Lattice-Compatible AlN Passivation Layer
The GaN-based green miniaturized light-emitting diode (mini-LED) is a key component for the realization of full-color display. Optimized passivation layers can alleviate the trapping of carriers by sidewall defects and are regarded as an effective way to
Jiahao Song +9 more
doaj +1 more source
Latest advances in plasma techniques used for atomic layer deposition
Webinar: Nanotechweb.org, Institute of Physics (IOP), November 2012 Atomic layer deposition (ALD) has established itself as the deposition technique of choice for ultra-thin, controlled, conformal, pin-hole free coatings.
Kessels, W.M.M.
core
Atomic Layer Deposition for Novel Dye-Sensitized Solar Cells
Herein we present the latest fabrication and characterization techniques for atomic layer deposition of Al2O3, ZnO, SnO2, Nb2O5, HfO2, Ga2O3 and TiO2 for research on dye-sensitized solar cell.
Stefik, M. +7 more
core +1 more source
Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen +7 more
wiley +1 more source
A Geometrically Transient Platform for Bioelectronic Implants
Minimally invasive bioelectronic implants often compromise performance for smaller sizes. To resolve this optimization dilemma, a wireless bioelectronic implant with a transient geometry is introduced (MiFi). The origami‐inspired device miniaturizes up to sixfold for syringe insertion and autonomously unfolds post‐implantation.
Selin Olenik +13 more
wiley +1 more source
Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating. [PDF]
Chiappim W +10 more
europepmc +1 more source
Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee +15 more
wiley +1 more source
Author Correction: Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry. [PDF]
Kilic U +9 more
europepmc +1 more source
Growth and chemical characterisation studies of Mn silicate barrier layers on SiO2 and CDO [PDF]
This thesis investigates the suitability of manganese silicate (MnSiO3) as a possible copper interconnect diffusion barrier layer on both a 5.4 nm thick thermally grown SiO2 and a low dielectric constant carbon doped oxide (CDO), with the focus of ...
Bogan, Justin
core +1 more source
The transition from cryogenic distillation to polymeric sorbents for light hydrocarbon purification is crucial for energy and environmental sustainability. The polymeric sorbents are engineered to separate gas mixtures based on their specific properties.
Kelechi Festus +9 more
wiley +1 more source

