Results 171 to 180 of about 5,793,656 (288)

A Liquid Ge(IV) Precursor for Low Temperature Plasma Enhanced Atomic Layer Deposition of Germanium Oxide Thin Films. [PDF]

open access: yesSmall
Preischel F   +10 more
europepmc   +1 more source

Toward Pore‐Engineered 3D‐Printed Materials for Sorption Water Harvesting, Interfacial Evaporation, and Radiative Cooling

open access: yesAdvanced Materials, EarlyView.
Water harvesting, radiative cooling, and interfacial solar evaporation are fundamentally governed by coupled heat, mass, and light transport processes. These processes are mediated by pore architecture, including pore size, connectivity, and hierarchical organization.
Dejan J. Trajkovski   +5 more
wiley   +1 more source

Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography

open access: yesAdvanced Materials, EarlyView.
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh   +9 more
wiley   +1 more source

Poly(Alkoxythiophene) Rod‐Coil Block Copolymers for Organic Electrochemical Transistors

open access: yesAdvanced Materials, EarlyView.
We present the first synthesis of poly(3‐alkoxythiophene) rod‐coil block copolymers as a new architecture for OMIECs. Incorporating PEG and PLLA coils can enhance device performance beyond the homopolymer. The figure‐of‐merit depends uniquely on coil length.
Junfu Tian   +23 more
wiley   +1 more source

Wafer-Scale Demonstration of BEOL-Compatible Ambipolar MoS<sub>2</sub> Devices Enabled by Plasma-Enhanced Atomic Layer Deposition. [PDF]

open access: yesACS Appl Mater Interfaces
Martínez A   +10 more
europepmc   +1 more source

Electrical characteristics of top-down ZnO nanowire transistors using remote plasma ALD

open access: yes
Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO2 pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3–18.6 µm, are then fabricated
Masaud, T.B.   +9 more
core   +1 more source

Atom–Cluster Synergy in Scalable Fe–Ru Dual‐Site Architectures Accelerates Alkaline Hydrogen Evolution

open access: yesAdvanced Materials, EarlyView.
A mechanochemically synthesized dual‐site electrocatalyst (RuNC@Fe1NC) accelerates alkaline hydrogen evolution via atomic‐level spatial decoupling. Oxophilic Fe single atoms effectively dissociate water, while adjacent Ru nanoclusters rapidly recombine hydrogen.
Jae‐Hoon Baek   +9 more
wiley   +1 more source

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