Results 171 to 180 of about 360 (212)

Plasma-enhanced atomic layer deposition of zinc phosphate

Journal of Non-Crystalline Solids, 2016
Abstract Zinc phosphate thin films were grown by plasma-enhanced atomic layer deposition (ALD) using a sequence of trimethyl phosphate (TMP, Me 3 PO 4 ) plasma, O 2 plasma, and diethylzinc (DEZn, Et 2 Zn) exposures. The film growth was monitored by in-situ spectroscopic ellipsometry.
T. Dobbelaere, M. Minjauw, T. Ahmad, P.M. Vereecken, C. Detavernier   +4 more
openaire   +1 more source

Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2015
Atomic layer deposition (ALD) relies on a sequence of self-limiting surface reactions for thin film growth. The effect of non-ALD side reactions, from insufficient purging between pulses and from precursor self-decomposition, on film growth is well known.
Triratna Muneshwar, Ken Cadien
openaire   +1 more source

Properties of HfAlO film deposited by plasma enhanced atomic layer deposition

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2013
Abstract Plasma enhanced atomic layer deposition (PEALD) method can reduce film growing temperature, and allow in situ plasma treatment. In this work, HfAlO and HfO2 films were deposited with PEALD at 160 °C. Microstructure analysis showed that both films were amorphous after rapid thermal annealing (RTA) treatment, and HfAlO sample showed better ...
Duo Cao, Xinhong Cheng, Tingting Jia, Li Zheng, Dawei Xu, Zhongjian Wang, Chao Xia, Yuehui Yu   +7 more
openaire   +1 more source

Properties of Aluminum Silicate Deposited by Plasma Enhanced Atomic Layer Deposition

ECS Meeting Abstracts, 2006
Abstract not Available.
Jung Wook Lim, Sun Jin Yun, Jin Ho Lee
openaire   +1 more source

Characteristics of ZrAlO Films Deposited by Plasma Enhanced Atomic Layer Deposition

ECS Meeting Abstracts, 2006
Abstract not Available.
Sun-Jin Yun, Jung-Wook Lim, Hyun-Tak Kim
openaire   +1 more source

Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment

Microelectronic Engineering, 2012
Plasma-enhanced atomic layer deposition was explored to produce thin HfO"2 films, where oxygen plasma acted as oxidant. The interfacial layer (IL) was controlled by in situ pre-oxygen plasma treatment (PRO) and pre-ammonia plasma treatment (PRN). Post oxygen plasma treatment (POP) to HfO"2 film was in situ executed.
Dawei Xu, Xinhong Cheng, Youwei Zhang, Zhongjian Wang, Chao Xia, Duo Cao, Yuehui Yu, DaShen Shen   +7 more
openaire   +1 more source

Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition

Applied Surface Science, 2017
Abstract Plasma-enhanced atomic layer deposition (PE-ALD) has many advantages for the deposition of thin films. However, an appropriate control of the plasma frequency in the PE-ALD process is required to reduce the plasma-induced damage of the thin films during deposition. In this study, we comparatively studied the effects of conventional 13.56 MHz,
Kim, Kangsik, Oh, Il-Kwon, Kim, Hyungjun, Lee, Zonghoon   +3 more
openaire   +2 more sources

Room Temperature Copper Seed Layer Deposition by Plasma-Enhanced Atomic Layer Deposition

ECS Transactions, 2011
AbaCus, a newly developed fluorine-free precursor has been used for room temperature copper deposition using plasma enhanced chemical vapor deposition (PEALD). This process has been characterized and the film properties investigated in term of composition, deposition rate, resistivity, grain size and platability.
Jiajun Mao, Eric Eisenbraun, Vincent Omarjee, Andrey Korolev, Christian Dussarrat   +4 more
openaire   +1 more source

Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006
Ta 2 O 5 films were deposited by plasma-enhanced atomic layer deposition (PEALD) and thermal ALD on native oxide surface (SiOx∕Si). The properties of as-deposited and forming gas annealed films were examined and qualitatively compared with respect to nanostructural, nanochemical, capacitance-voltage and leakage-current–voltage (JL-V), and oxide ...
Diefeng Gu, Jing Li, Sandwip K. Dey, Henk De Waard, Steven Marcus   +4 more
openaire   +1 more source

Properties of AlN grown by plasma enhanced atomic layer deposition

Applied Surface Science, 2011
Abstract The influence of growth parameters on the properties of AlN films fabricated by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia precursors was investigated. The atomic concentrations, refractive index, mass density, crystallinity and surface roughness were studied from the films grown in the temperature range of ...
Bosund, Markus, Sajavaara, Timo, Laitinen, Mikko, Huhtio, Teppo, Putkonen, Matti, Airaksinen, Veli-Matti, Lipsanen, Harri   +7 more
openaire   +2 more sources