A Liquid Ge(IV) Precursor for Low Temperature Plasma Enhanced Atomic Layer Deposition of Germanium Oxide Thin Films. [PDF]
Preischel F +10 more
europepmc +1 more source
Water harvesting, radiative cooling, and interfacial solar evaporation are fundamentally governed by coupled heat, mass, and light transport processes. These processes are mediated by pore architecture, including pore size, connectivity, and hierarchical organization.
Dejan J. Trajkovski +5 more
wiley +1 more source
Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Cu Films Using Liquid Copper Precursor Bis(1-ethylmethylamino-2-propoxy)copper, Cu(emap)<sub>2</sub>. [PDF]
Nishida A +4 more
europepmc +1 more source
Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh +9 more
wiley +1 more source
Poly(Alkoxythiophene) Rod‐Coil Block Copolymers for Organic Electrochemical Transistors
We present the first synthesis of poly(3‐alkoxythiophene) rod‐coil block copolymers as a new architecture for OMIECs. Incorporating PEG and PLLA coils can enhance device performance beyond the homopolymer. The figure‐of‐merit depends uniquely on coil length.
Junfu Tian +23 more
wiley +1 more source
Wafer-Scale Demonstration of BEOL-Compatible Ambipolar MoS<sub>2</sub> Devices Enabled by Plasma-Enhanced Atomic Layer Deposition. [PDF]
Martínez A +10 more
europepmc +1 more source
Electrical characteristics of top-down ZnO nanowire transistors using remote plasma ALD
Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO2 pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3–18.6 µm, are then fabricated
Masaud, T.B. +9 more
core +1 more source
A mechanochemically synthesized dual‐site electrocatalyst (RuNC@Fe1NC) accelerates alkaline hydrogen evolution via atomic‐level spatial decoupling. Oxophilic Fe single atoms effectively dissociate water, while adjacent Ru nanoclusters rapidly recombine hydrogen.
Jae‐Hoon Baek +9 more
wiley +1 more source
Retraction of "N<sub>2</sub>/H<sub>2</sub> Plasma-Enhanced Atomic Layer Deposition for SiO<sub>2</sub> Gap Filling: Implications for Nanoelectronics in Semiconductor Manufacturing". [PDF]
Okasha S, Munson D, Yoshikawa J.
europepmc +1 more source
Structural, Optical and Electrical Properties of HfO2 Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition. [PDF]
Kim KM +4 more
europepmc +1 more source

