Results 91 to 100 of about 17,661 (114)

Plasma-enhanced atomic layer deposition of superconducting niobium nitride

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2016
Thin films of niobium nitride are useful for their physical, chemical, and electrical properties. NbN superconducting properties have been utilized in a wide range of applications. Plasma-enhanced atomic layer deposition (PEALD) of NbN with (t-butylimido) tris(diethylamido) niobium(V) and remote H2/N2 plasmas has been investigated.
Mark J. Sowa, Yonas Yemane, Jinsong Zhang, Johanna C. Palmstrom, Ling Ju, Nicholas C. Strandwitz, Fritz B. Prinz, J. Provine   +7 more
openaire   +1 more source

Plasma Enhanced Atomic Layer Deposited Ru for MIMCAP Applications

ECS Meeting Abstracts, 2011
Abstract not Available.
Johan Swerts, M.M. Salimullah, M. Popovici, M.-S. Kim, M.A. Pawlak, A. Delabie, M. Schaekers, K. Tomida, B. Kaczer, K. Opsomer, C. Vrancken, I Debusschere, L. Altimime, J.A. Kittl, S. Van Elshocht   +14 more
openaire   +1 more source

Plasma enhanced atomic layer deposition of copper: A comparison of precursors

Surface and Coatings Technology, 2013
Abstract The growth of Cu films by atomic layer deposition using hydrogen plasma has been investigated. To obtain continuous films at sub 5 nm thicknesses the two dimensional coalescence of Cu nucleation sites formed at the start of the deposition process must be enhanced in preference to three dimensional island growth.
D.J. Hagen, J. Connolly, R. Nagle, I.M. Povey, S. Rushworth, P. Carolan, P. Ma, M.E. Pemble   +7 more
openaire   +1 more source

Effect of plasma parameters on the properties of V2O5 deposited by plasma-enhanced atomic layer deposition

Journal of Vacuum Science & Technology A
In this work, we investigate the deposition of VOx thin films by plasma-enhanced atomic layer deposition. Specifically, we focus on the effects of the plasma operating conditions, including applied power, O2/Ar gas flow ratio, pressure, and coupling mode on the resulting thin film crystallinity and stoichiometry. In addition, we characterize the plasma
P. M. Litwin, N. Nepal, M. G. Sales, D. R. Boris, M. J. Johnson, S. G. Walton, V. D. Wheeler   +6 more
openaire   +1 more source

Growth of TiO2 with thermal and plasma enhanced atomic layer deposition.

Journal of nanoscience and nanotechnology, 2011
We show a comparative study of the TiO2 ALD with TTIP and either O2 or O2-plasma on Si/SiO2 substrates. In particular we compare the surface morphology and crystalline phase by means of Atomic Force Microscopy (AFM), X-ray Photoelectron Spectroscopy (XPS) and X-ray Absorption Spectroscopy (XAS) for different O2-plasma procedures upon changing the time ...
Massimo, Tallarida, Daniel, Friedrich, Matthias, Städter, Marcel, Michling, Dieter, Schmeisser   +4 more
openaire   +1 more source

Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2023
Heli Seppänen, Igor Prozheev, Christoffer Kauppinen   +2 more
exaly  

Plasma enhanced atomic layer deposition of Ga

Journal of Materials Chemistry A, 2014
Ranjith K. Ramachandran, Jolien Dendooven, Jonas Botterman, Sreeprasanth Pulinthanathu Sree, Dirk Poelman, Johan A. Martens, Hilde Poelman, Christophe Detavernier   +7 more
openaire   +1 more source

Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2020
Ali Mahmoodinezhad, C Janowitz, Franziska Naumann   +2 more
exaly  

Plasma-enhanced atomic layer deposition of SiO2 film using capacitively coupled Ar/O2 plasmas: A computational investigation

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2021
Chenhui Qu, Pulkit Agarwal, Mark J Kushner   +2 more
exaly  

Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors

Thin Solid Films, 2014
Matti Putkonen, Oili M E Ylivaara, Riikka L Puurunen   +2 more
exaly