Results 91 to 100 of about 96,312 (290)

Janus monolayers of transition metal dichalcogenides. [PDF]

, 2017
Structural symmetry-breaking plays a crucial role in determining the electronic band structures of two-dimensional materials. Tremendous efforts have been devoted to breaking the in-plane symmetry of graphene with electric fields on AB-stacked bilayers ...
A Manchon, Ang-Yu Lu, AV Bune, B Hunt, BJ Rodriguez, C Becher, Chia-Chin Cheng, Chih-Piao Chuu, Chih-Wen Yang, David A. Muller, Dennis Nordlund, Dimosthenis Sokaras, F Johann, G da Cunha Rodrigues, GM Akselrod, H Li, H Yuan, H Zeng, H Zhu, Hanyu Zhu, JJ Yeh, Jun Xiao, KF Mak, KF Mak, Kung-Hwa Wei, LA Ponomarenko, Lain-Jong Li, Mei-Yin Chou, Ming-Hui Chiu, MP Seah, N Kumar, Peidong Yang, RM Corn, S Hong, S Wu, S-H Su, X Yin, XB Wang, Xiang Zhang, Y Liu, Y Shi, Y Shimazaki, Y Zhang, Y-H Lee, YC Cheng, Yiming Yang, Yimo Han, Yuan Wang, Z Ye   +48 more
core   +1 more source

Photoswitchable Conductive Metal–Organic Frameworks

Advanced Functional Materials, EarlyView.
A conductive material where the conductivity can be modulated remotely by irradiation with light is presented. It is based on films of conductive metal–organic framework type Cu3(HHTP)2 with embedded photochromic molecules such as azobenzene, diarylethene, spiropyran, and hexaarylbiimidazole in the pores.
Yidong Liu, Mersad Mostaghimi, Abhinav Chandresh, Saibal Jana, Wolfgang Wenzel, Lars Heinke   +5 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Elemental distribution and oxygen deficiency of magnetron sputtered ITO films

, 2011
The atomic structure and composition of non-interfacial ITO and ITO-Si interfaces were studied with Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). The films were deposited by DC magnetron sputtering on mono-crystalline
Diplas, Spyros, Mayandi, Jeyanthinath, Monakhov, Edouard, Rein, Margrethe, Thøgersen, Annett   +4 more
core   +1 more source

Nanoroughness, Surface Chemistry and Drug Delivery Control by Atmospheric Plasma Jet on Implantable Devices [PDF]

, 2018
Implantable devices need specific tailored surface morphologies and chemistries to interact with the living systems or to actively induce a biological response also by the release of drugs or proteins.
Ambrosi, Emmanuele, Brun, Paola, Genova, Tullio, Mattei, Giovanni, Michieli, Niccol\uf2 T, Moroni, Lorenzo, Mussano, Federico, Patelli, Alessandro, Scopece, Paolo   +8 more
core   +3 more sources

Tuning the Dielectric Properties of Individual Clay Nanosheets by Interlayer Composition: Toward Nano‐Electret Materials

Advanced Functional Materials, EarlyView.
The dielectric properties of clays are studied on the level of individual monolayers and functional double stacks. The material breakdown characteristics and charge storage performance are analyzed. For illustration, a defined charge pattern representing a cuneiform character is produced, written into a microscopic clay tile, referencing the origins of
Sebastian Gödrich, Paul Markus, Matthias Stöter, Bernhard Biersack, Rainer Schobert, Josef Breu, Georg Papastavrou   +6 more
wiley   +1 more source

Reduction of hydrogen-induced optical losses of plasma-enhanced chemical vapor deposition silicon oxynitride by phosphorus doping and heat treatment [PDF]

, 2007
Plasma enhanced chemical vapor deposition phosphoros-doped silicon oxynitride (SiON) layers with a refractive index of 1.505 were deposited from $N_{2}O$, 2% $SiH_{4}/N_{2}$, and 5% $PH_{3}/Ar$ gaseous mixtures.
Driessen, A., Hussein, M.G., Sengo, G., Wörhoff, K.   +3 more
core   +4 more sources

Plasma-Enhanced Atomic Layer Deposition of TiAlN: Compositional and Optoelectronic Tunability

ACS Applied Materials & Interfaces, 2019
Titanium nitride (TiN) is a unique refractory plasmonic material, the nanocomposites and alloys of which provide further opportunities to tailor its optical and photonic properties. We prepare TiAlN films of continuously variable compositions through the systematic variation of TiN versus AlN cycle ratio in plasma-enhanced atomic layer deposition ...
Nari Jeon, Ian Lightcap, David J. Mandia, Alex B. F. Martinson   +3 more
openaire   +3 more sources

Substrate Stress Relaxation Regulates Cell‐Mediated Assembly of Extracellular Matrix

Advanced Functional Materials, EarlyView.
Silicone‐based viscoelastic substrates with tunable stress relaxation reveal how matrix mechanics regulates cellular mechanosensing and cell‐mediated matrix remodelling in the stiff regime. High stress relaxation promotes assembly of fibronectin fibril‐like structures, increased nuclear localization of YAP and formation of β1 integrin‐enriched ...
Jonah L. Voigt, Jens Timmer, Elisabetta Ada Cavalcanti‐Adam   +2 more
wiley   +1 more source

Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co [PDF]

The silicide formation by annealing plasma-enhanced atomic layer deposition (PE-ALD) Co and physical vapor deposition (PVD) Co was comparatively studied. Very pure Co films were deposited by PE-ALD with CoCp2 and NH3 plasma.
Kim, H, Lee, HBR, Son, JY
core   +1 more source