Results 21 to 30 of about 96,312 (290)

Plasma Enhanced Atomic Layer Deposition of Tantalum (V) Oxide [PDF]

open access: yesCoatings, 2021
The tantalum oxide thin films are promising materials for various applications: as coatings in optical devices, as dielectric layers for micro and nanoelectronics, and for thin-films solid-state lithium-ion batteries (SSLIBs). This article is dedicated to the Ta-O thin-film system synthesis by the atomic layer deposition (ALD) which allows to deposit ...
Pavel Fedorov   +7 more
openaire   +1 more source

Plasma-enhanced atomic layer deposition of amorphous Ga2O3 for solar-blind photodetection

open access: yesJournal of Electronic Science and Technology, 2022
Wide-bandgap gallium oxide (Ga2O3) is one of the most promising semiconductor materials for solar-blind (200 ​nm–280 ​nm) photodetection. In its amorphous form, a-Ga2O3 maintains its intrinsic optoelectronic properties while can be prepared at a low ...
Ze-Yu Fan   +11 more
doaj   +1 more source

Growth chemistry of cobalt nitride by plasma enhanced atomic layer deposition

open access: yesMaterials Research Express, 2022
State-of-the-art atomic layer deposition (ALD) and photoemission characterisation are applied to grow and characterise cobalt nitride, a material that has applications in renewable energy and semiconductor technologies.
S O’Donnell   +9 more
doaj   +1 more source

Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD

open access: yesCrystals, 2022
Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory applications. In particular, Si-doped hafnium oxide layers are investigated for the application in the front-end-of-line due to their resilience to high thermal ...
Markus Neuber   +5 more
doaj   +1 more source

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

open access: yesMolecules, 2022
Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications.
Fang-Bin Ren   +8 more
doaj   +1 more source

Plasma-enhanced atomic layer deposition for plasmonic TiN (Erratum) [PDF]

open access: yesNanophotonic Materials XIII, 2020
Publisher’s Note: This paper, originally published on 3 October 2016, was replaced with a corrected version on 12 May 2020. If you downloaded the original PDF but are unable to access the revision, please contact SPIE Digital Library Customer Service for assistance.
Lauren M. Otto   +7 more
openaire   +1 more source

Influence of NiO ALD Coatings on the Field Emission Characteristic of CNT Arrays

open access: yesNanomaterials, 2022
The paper presents a study of a large-area field emitter based on a composite of vertically aligned carbon nanotubes covered with a continuous and conformal layer of nickel oxide by the atomic layer deposition method.
Maksim A. Chumak   +6 more
doaj   +1 more source

Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films [PDF]

open access: yesECS Meeting Abstracts, 2013
Abstract not Available.
Ozgit-Akgun, Çağla   +2 more
openaire   +2 more sources

Fabrication of Aluminum Oxide Thin-Film Devices Based on Atomic Layer Deposition and Pulsed Discrete Feed Method

open access: yesMicromachines, 2023
This study demonstrates the low-temperature (
Shih-Chin Lin   +5 more
doaj   +1 more source

Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition [PDF]

open access: yes, 2016
We report the design of a mobile setup for synchrotron based in situ studies during atomic layer processing. The system was designed to facilitate in situ grazing incidence small angle x-ray scattering (GISAXS), x-ray fluorescence (XRF), and x-ray ...
Alessandro Coati   +10 more
core   +2 more sources

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