Results 21 to 30 of about 360 (212)
High quality recording of neuronal activities and electrical stimulation require neurotechnical implants with appropriate electrode material. Iridium oxide (IrOx) is an excellent choice of material due to its biocompatibility, low electrochemical ...
Simon Nicolai +3 more
doaj +1 more source
In the presented study, a novel approach for thermal atomic layer deposition (ALD) of Al2O3 thin films using plasma-activated water (PAW) as a co-reactant, replacing traditionally employed deionized (DI) water, is introduced.
João Chaves +6 more
doaj +1 more source
Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO
Direct plasma enhanced-atomic layer deposition (PE-ALD) is adopted for the growth of ZnO on c-Si with native oxide at room temperature. The initial stages of growth both in terms of thickness evolution and crystallization onset are followed ex-situ by a ...
Alberto Perrotta +4 more
doaj +1 more source
The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
With the development of industrial civilization, advanced manufacturing technology has attracted widespread concern, including in the aerospace industry.
Guibai Xie +7 more
doaj +1 more source
Aluminum nitride (AlN) film is a promising material which is used in various fields. In this study, AlN films with different plasma powers were grown by remote plasma atomic layer deposition.
Xiao-Ying Zhang +12 more
doaj +1 more source
Plasma-enhanced atomic layer deposition for plasmonic TiN (Erratum) [PDF]
Publisher’s Note: This paper, originally published on 3 October 2016, was replaced with a corrected version on 12 May 2020. If you downloaded the original PDF but are unable to access the revision, please contact SPIE Digital Library Customer Service for assistance.
Lauren M. Otto +7 more
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Structural, Surface, and Optical Properties of AlN Thin Films Grown on Different Substrates by PEALD
Plasma-enhanced atomic layer deposition was employed to grow aluminum nitride (AlN) thin films on Si (100), Si (111), and c-plane sapphire substrates at 250 °C. Trimethylaluminum and Ar/N2/H2 plasma were utilized as Al and N precursors, respectively. The
Sanjie Liu +4 more
doaj +1 more source
Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors
The use of the plasma-enhanced atomic layer deposition (ALD) technique for the deposition of HfO2-based ferroelectrics has received attention in recent years primarily due to wake-up free operation.
Chinsung Park +13 more
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Plasma-enhanced atomic layer deposition (PEALD) of TiN thin films were investigated as an effective Se diffusion barrier layer for Cu (In, Ga) Se2 (CIGS) solar cells.
Hyun-Jae Woo +6 more
doaj +1 more source
Plasma-enhanced atomic layer deposition of vanadium nitride
This work describes process development and associated characterization of a plasma-enhanced atomic layer deposition process for vanadium nitride (VN) using tetrakis(dimethylamido)vanadium and nitrogen plasma over a deposition temperature range from 150 to 300 °C.
Alexander C. Kozen +7 more
openaire +1 more source

