Results 21 to 30 of about 5,793,656 (288)

Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition

Crystals, 2021
In this study, we report on the deposition of a highly crystalline AlN interfacial layer on GaN at 330 °C via plasma-enhanced atomic layer deposition (PEALD). Trimethylaluminum (TMA) and NH3 plasma were used as the Al and N precursors, respectively.
Il-Hwan Hwang, Myoung-Jin Kang, Ho-Young Cha, Kwang-Seok Seo   +3 more
doaj   +1 more source

Characteristics of Hf_0.5Zr_0.5O₂ Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory

Nanomaterials, 2023
Hf0.5Zr0.5O2 (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal–oxide–semiconductor (CMOS) process.
Da Hee Hong, Jae Hoon Yoo, Won Ji Park, So Won Kim, Jong Hwan Kim, Sae Hoon Uhm, Hee Chul Lee   +6 more
doaj   +1 more source

Plasma-enhanced atomic layer deposition of amorphous Ga2O3 for solar-blind photodetection

Journal of Electronic Science and Technology, 2022
Wide-bandgap gallium oxide (Ga2O3) is one of the most promising semiconductor materials for solar-blind (200 ​nm–280 ​nm) photodetection. In its amorphous form, a-Ga2O3 maintains its intrinsic optoelectronic properties while can be prepared at a low ...
Ze-Yu Fan, Min-Ji Yang, Bo-Yu Fan, Andraž Mavrič, Nadiia Pastukhova, Matjaz Valant, Bo-Lin Li, Kuang Feng, Dong-Liang Liu, Guang-Wei Deng, Qiang Zhou, Yan-Bo Li   +11 more
doaj   +1 more source

Growth chemistry of cobalt nitride by plasma enhanced atomic layer deposition

Materials Research Express, 2022
State-of-the-art atomic layer deposition (ALD) and photoemission characterisation are applied to grow and characterise cobalt nitride, a material that has applications in renewable energy and semiconductor technologies.
S O’Donnell, M Snelgrove, K Shiel, C Weiland, G Hughes, J Woicik, D O’Neill, F Jose, C McFeely, R O’Connor   +9 more
doaj   +1 more source

Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD

Crystals, 2022
Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory applications. In particular, Si-doped hafnium oxide layers are investigated for the application in the front-end-of-line due to their resilience to high thermal ...
Markus Neuber, Maximilian Walter Lederer, Konstantin Mertens, Thomas Kämpfe, Malte Czernohorsky, Konrad Seidel   +5 more
doaj   +1 more source

Influence of NiO ALD Coatings on the Field Emission Characteristic of CNT Arrays

Nanomaterials, 2022
The paper presents a study of a large-area field emitter based on a composite of vertically aligned carbon nanotubes covered with a continuous and conformal layer of nickel oxide by the atomic layer deposition method.
Maksim A. Chumak, Leonid A. Filatov, Ilya S. Ezhov, Anatoly G. Kolosko, Sergey V. Filippov, Eugeni O. Popov, Maxim Yu. Maximov   +6 more
doaj   +1 more source

Fabrication of Aluminum Oxide Thin-Film Devices Based on Atomic Layer Deposition and Pulsed Discrete Feed Method

Micromachines, 2023
This study demonstrates the low-temperature (
Shih-Chin Lin, Ching-Chiun Wang, Chuen-Lin Tien, Fu-Ching Tung, Hsuan-Fu Wang, Shih-Hsiang Lai   +5 more
doaj   +1 more source

Surface characterization of plasma-modified low density polyethylene by attenuated total reflectance fourier-transform infrared (ATR-FTIR) spectroscopy combined with chemometrics

Polymer Testing, 2021
Atomic layer deposition (ALD) on polymer substrates often requires a modification of the polymer surface properties. Plasma-enhanced ALD (PE-ALD) process is capable of establishing improved coating/substrate adhesion and layer properties by a plasma pre ...
Réka Lilla Kovács, Máté Csontos, Szilvia Gyöngyösi, János Elek, Bence Parditka, György Deák, Ákos Kuki, Sándor Kéki, Zoltán Erdélyi   +8 more
doaj   +1 more source

Enhanced surface passivation of AlGaN/GaN HEMTs via GaON-engineered interface for improved performance [PDF]

AIP Advances
In this study, we report a novel multi-step surface passivation scheme for AlGaN/GaN high electron mobility transistors, integrating oxygen plasma treatment followed by high-temperature annealing (OPANT), Wet Buffered Oxide Etch (BOE) wet etching, remote
Xiao Wang, Yu-Min Zhang, Liang Wang, Xin-Yu Hao, Ke Xu   +4 more
doaj   +1 more source

An Experimental and Theoretical Study of the Impact of the Precursor Pulse Time on the Growth Per Cycle and Crystallinity Quality of TiO2 Thin Films Grown by ALD and PEALD Technique

Frontiers in Mechanical Engineering, 2020
In this paper, theoretical and experimental approaches were used to evaluate the impact of the precursor's pulse time on the growth per cycle and the crystallinity quality of atomic layer deposited TiO2 thin films on Si(100) and FTO substrates. We employ
William Chiappim, Mariana Amorim Fraga, Homero Santiago Maciel, Homero Santiago Maciel, Rodrigo Sávio Pessoa, Rodrigo Sávio Pessoa   +5 more
doaj   +1 more source