Results 11 to 20 of about 360 (212)

Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD

Crystals, 2022
Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory applications. In particular, Si-doped hafnium oxide layers are investigated for the application in the front-end-of-line due to their resilience to high thermal ...
Markus Neuber, Maximilian Walter Lederer, Konstantin Mertens, Thomas Kämpfe, Malte Czernohorsky, Konrad Seidel   +5 more
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Influence of NiO ALD Coatings on the Field Emission Characteristic of CNT Arrays

Nanomaterials, 2022
The paper presents a study of a large-area field emitter based on a composite of vertically aligned carbon nanotubes covered with a continuous and conformal layer of nickel oxide by the atomic layer deposition method.
Maksim A. Chumak, Leonid A. Filatov, Ilya S. Ezhov, Anatoly G. Kolosko, Sergey V. Filippov, Eugeni O. Popov, Maxim Yu. Maximov   +6 more
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Fabrication of Aluminum Oxide Thin-Film Devices Based on Atomic Layer Deposition and Pulsed Discrete Feed Method

Micromachines, 2023
This study demonstrates the low-temperature (
Shih-Chin Lin, Ching-Chiun Wang, Chuen-Lin Tien, Fu-Ching Tung, Hsuan-Fu Wang, Shih-Hsiang Lai   +5 more
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Surface characterization of plasma-modified low density polyethylene by attenuated total reflectance fourier-transform infrared (ATR-FTIR) spectroscopy combined with chemometrics

Polymer Testing, 2021
Atomic layer deposition (ALD) on polymer substrates often requires a modification of the polymer surface properties. Plasma-enhanced ALD (PE-ALD) process is capable of establishing improved coating/substrate adhesion and layer properties by a plasma pre ...
Réka Lilla Kovács, Máté Csontos, Szilvia Gyöngyösi, János Elek, Bence Parditka, György Deák, Ákos Kuki, Sándor Kéki, Zoltán Erdélyi   +8 more
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Enhanced surface passivation of AlGaN/GaN HEMTs via GaON-engineered interface for improved performance [PDF]

AIP Advances
In this study, we report a novel multi-step surface passivation scheme for AlGaN/GaN high electron mobility transistors, integrating oxygen plasma treatment followed by high-temperature annealing (OPANT), Wet Buffered Oxide Etch (BOE) wet etching, remote
Xiao Wang, Yu-Min Zhang, Liang Wang, Xin-Yu Hao, Ke Xu   +4 more
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An Experimental and Theoretical Study of the Impact of the Precursor Pulse Time on the Growth Per Cycle and Crystallinity Quality of TiO2 Thin Films Grown by ALD and PEALD Technique

Frontiers in Mechanical Engineering, 2020
In this paper, theoretical and experimental approaches were used to evaluate the impact of the precursor's pulse time on the growth per cycle and the crystallinity quality of atomic layer deposited TiO2 thin films on Si(100) and FTO substrates. We employ
William Chiappim, Mariana Amorim Fraga, Homero Santiago Maciel, Homero Santiago Maciel, Rodrigo Sávio Pessoa, Rodrigo Sávio Pessoa   +5 more
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Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition

Nanoscale Research Letters, 2017
Growing high-quality and uniform dielectric on black phosphorus is challenging since it is easy to react with O2 or H2O in ambient. In this work, we have directly grown Al2O3 on BP using plasma-enhanced atomic layer deposition (PEALD).
B. B. Wu, H. M. Zheng, Y. Q. Ding, W. J. Liu, H. L. Lu, P. Zhou, L. Chen, Q. Q. Sun, S. J. Ding, David W. Zhang   +9 more
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Compact Ga₂O₃ Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition at Low Temperature

Nanomaterials, 2022
Amorphous Gallium oxide (Ga2O3) thin films were grown by plasma-enhanced atomic layer deposition using O2 plasma as reactant and trimethylgallium as a gallium source.
Yue Yang, Xiao-Ying Zhang, Chen Wang, Fang-Bin Ren, Run-Feng Zhu, Chia-Hsun Hsu, Wan-Yu Wu, Dong-Sing Wuu, Peng Gao, Yu-Jiao Ruan, Shui-Yang Lien, Wen-Zhang Zhu   +11 more
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Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films [PDF]

ECS Meeting Abstracts, 2013
Abstract not Available.
Ozgit-Akgun, Çağla, Dönmez İnci, Bıyıklı, Necmi   +2 more
openaire   +2 more sources

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide

Nanoscale Research Letters, 2019
In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials.
Zhen Zhu, Perttu Sippola, Oili M. E. Ylivaara, Chiara Modanese, Marisa Di Sabatino, Kenichiro Mizohata, Saoussen Merdes, Harri Lipsanen, Hele Savin   +8 more
doaj   +1 more source