Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs [PDF]
, 2015 Al2O3 films deposited by thermal and plasma-assisted atomic layer deposition (ALD) were evaluated as passivation layers for InAlN/AlN/GaN HEMTs. As a reference, a comparison was made with the more conventional plasma enhanced chemical vapor deposition ...
Aubry, R. +8 more
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Optimal Aluminum Doping Method in PEALD for Designing Outstandingly Stable InAlZnO TFT
Advanced Materials Interfaces, 2023 Oxide semiconductors are promising semiconducting materials for next‐generation thin‐film transistors (TFTs). The role of the cations should be considered in the design of oxide semiconductors suitable for various applications. Ga has been widely used as
Namgyu Woo +2 more
doaj +1 more source
A Comparative Passivation Study for InAs/GaSb Pin Superlattice Photodetectors [PDF]
, 2013 Cataloged from PDF version of article.In the quest to find ever better passivation techniques for infrared photodetectors, we explore several passivation layers using atomic layer deposition (ALD).
Aydinli, A., Muti, A., Salihoglu, O.
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Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films [PDF]
Ti-Si-N thin films were deposited by plasma-enhanced atomic layer deposition from TiCl4, SiH4, and N-2/H-2/Ar plasma at 350 degrees C. For comparison, TiN plasma-enhanced atomic layer deposition (PEALD) was also performed from TiCl4.
Kang, SW, Kim, H, Park, JS
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High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning [PDF]
, 2012 This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-kinsulator layer on GaAs. It is shown that high-kGaAsMIS capacitors with an unpinned Fermi level can be fabricated utilizing a thin ex ...
Bosund, M. +9 more
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Advanced Engineering Materials, EarlyView.This study demonstrates an efficient recycling route for out‐of‐spec AlSi10Mg atomized powders through compaction and arc remelting followed by suction casting. By correlating compaction load, cooling rate, and resulting microstructure, we show that intermediate pressures (50–80 kN) and rapid cooling refine dendrites, reduce porosity, and enhance ...
Mila Christy de Oliveira +4 more
wiley +1 more source
Reducing the Process Energy through Applying Plasma in Atomic Layer Deposition of Solid Oxide Fuel Cell Electrolyte [PDF]
한국정밀공학회지, 2019 The energy saving effect of reactant plasma in Atomic Layer Deposition (ALD) of ultrathin solid oxide fuel cell electrolyte was examined by measuring electrical current in real time.
Sanghoon Ji
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Atomic layer deposition of aluminum phosphate based on the plasma polymerization of trimethyl phosphate [PDF]
, 2014 Aluminum phosphate thin films were deposited by plasma-assisted atomic layer deposition (ALD) using a sequence of trimethyl phosphate (TMP, Me3PO4) plasma, O-2 plasma, and trimethylaluminum (TMA, Me3Al) exposures.
Detavernier, Christophe +3 more
core +1 more source
Oxide‐Free Titanium Coatings by Wire Arc Spraying in a Silane‐Doped Inert Atmosphere
Advanced Engineering Materials, EarlyView.A silane‐doped argon atmosphere enables the production of oxide‐free titanium coatings via twin‐wire arc spraying at ambient pressure. This innovative approach eliminates residual oxygen, creating process conditions that prevent oxidation and nitride formation.
Manuel Rodriguez Diaz +4 more
wiley +1 more source
Passivation effects of atomic-layer-deposited aluminum oxide
EPJ Photovoltaics, 2013 Atomic-layer-deposited (ALD) aluminum oxide (Al2O3) has recently demonstrated an excellent surface passivation for both n- and p-type c-Si solar cells thanks to the presence of high negative fixed charges (Qf ~ 1012−1013 cm-2) in combination with a low ...
Kotipalli R. +5 more
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