Results 261 to 270 of about 30,611 (305)

PtRu Nanofilm Formation by Electrochemical Atomic Layer Deposition (E-ALD)

Langmuir, 2014
The high CO tolerance of PtRu electrocatalysis, compared with pure Pt and other Pt-based alloys, makes it interesting as an anode material in proton exchange membrane fuel cells (PEMFC) and direct methanol fuel cells (DMFC). This report describes the formation of bimetallic PtRu nanofilms using the electrochemical form of atomic layer deposition (E-ALD)
Nagarajan, Jayaraju, Dhego, Banga, Chandru, Thambidurai, Xuehai, Liang, Youn-Guen, Kim, John L, Stickney   +5 more
openaire   +2 more sources

Atomic layer deposition (ALD) tungsten nano-electromechanical transistors

2010 IEEE 23rd International Conference on Micro Electro Mechanical Systems (MEMS), 2010
In this paper a relatively simple, CMOS compatible, top-down nano-fabrication process used in the fabrication of 3-terminal NEMS switches is introduced. The process is low-temperature, using atomic layer deposition tungsten (WALD) deposited at 120 °C as the structural material.
B.D. Davidson, S.M. George, V.M. Bright
openaire   +1 more source

Atomic layer deposition (ALD) technology for reliable RF MEMS

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2003
A nano-layer inorganic coating technology has been developed to protect RF MEMS from electrical shorting as well as long-term reliability failures due to charging or moisture. The combination of alumina dielectric and zinc-oxide conducting layers can be constructed one atomic layer at a time. At 177/spl deg/C, the released RF MEMS devices can be coated
N. Hoivik, J.W. Elam, S.M. George, K.C. Gupta, V.M. Bright, Y.C. Lee   +5 more
openaire   +1 more source

Formation of PbTe nanofilms by electrochemical atomic layer deposition (ALD)

Electrochimica Acta, 2008
Abstract This article describes optimization of a cycle for the deposition of lead telluride (PbTe) nanofilms using electrochemical atomic layer deposition (ALD). PbTe is of interest for the formation of thermoelectric device structures. Deposits were formed using an ALD cycle on Au substrates, one atomic layer at a time, from separate solutions ...
Dhego O. Banga, Raman Vaidyanathan, Liang Xuehai, John L. Stickney, Stephen Cox, Uwe Happeck   +5 more
openaire   +1 more source

Building a Rotary system for Atomic Layer Deposition (ALD)

2023
My project is to construct a rotary reaction chamber for doing rotary atomic layer deposition (ALD). ALD is a technique that excels at creating uniform thin films and is typically used to deposit thin films on flat surfaces. However, the goal of this project is to deposit thin films on powdered materials. A rotary system would help the deposition.
openaire   +1 more source

Electron Enhanced Atomic Layer Deposition (EE-ALD)

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2019
Electron enhanced atomic layer deposition (EE-ALD) can dramatically reduce the temperatures required for film growth. Temperature reduction is possible because of electron stimulated desorption (ESD) of surface species. The desorption process creates highly reactive "dangling bond" surface sites.
openaire   +1 more source

Atomic Layer Deposition (ALD) Processes for ULSI Manufacturing

2009
Atomic layer deposition (ALD) is a technique where precursors are introduced alternatively, and a monolayer (or fraction thereof) is deposited on the surface at a time [1–4]. The sequential introduction of all precursors, separated by purge steps, completes an ALD cycle. Figure 14.1 illustrates the steps that comprise an ALD cycle.
openaire   +1 more source

Progress in Pulse Plating Atomic Layer Deposition (PP-ALD)

ECS Meeting Abstracts, 2015
A family of absorber materials of interest for high volume production of photovoltaics is referred to as CZTS, or Cu2ZnSn(S,Se)4.  The primary advantages of these materials are that they are made from nontoxic earth abundant elements.   This group has been working on electrochemical atomic layer deposition (E-ALD) as a method for the formation of PV ...
John Lewellen Stickney, Justing Czerniawski, Nhi Bui, Xiaoyue Zhang, Sheng Shen   +4 more
openaire   +1 more source

Electrical properties of V2O5 thin films obtained by atomic layer deposition (ALD)

Journal of Materials Chemistry, 2004
Dielectric and conductivity spectra of a V2O5 thin film were recorded in a broad frequency range 40–1.1 × 108 Hz at temperatures varying between 205 and 297 K. The V2O5 thin film (thickness 260 nm) was deposited on titanium substrate by atomic layer deposition (ALD). An annealing process at 500 °C in air was required to obtain crystallized V2O5.
Badot, Jean-Claude, Mantoux, A., Baffier, Noël, Dubrunfaut, Olivier, Lincot, Daniel   +4 more
openaire   +2 more sources

Optimization of PbSe Nanofilms formation by Electrochemical Atomic Layer Deposition (ALD)

ECS Transactions, 2009
Optimization studies of lead selenide (PbSe) nanofilm formation using electrochemical Atomic Layer Deposition (ALD) are reported here. IV-VI compounds semiconductors, such as the lead chalcogenides (PbSe, PbTe and PbS), have narrow band gaps and crystallize in the cubic rock salt structure.
Dhego Banga, You-Geun Kim, Stephen Cox, Uwe Happek, J. L. Stickney   +4 more
openaire   +1 more source