Crystal orientation and domain engineering enable bulk mirror symmetry breaking in Bi1−xSbx, resulting in ultralow current‐induced switching of perpendicular magnetization without an external field. By exploiting single‐domain Bi1−xSbx (012), the authors demonstrate an out‐of‐plane spin Hall conductivity of ∼1.12×105ℏ2eΩ−1m−1$ \sim \!1.12 \ensuremath ...
Seungwon Rho +6 more
wiley +1 more source
Memristive Motion‐Streak Neuron for Spatiotemporal Multiple Object Detection
This work proposes motion‐streak neuron hardware using amorphous In–Ga–Zn–O optoelectronic memristors and dynamic memristors for spatiotemporal multiple‐object detection. The motion streak neuron array processes optical and electrical stimuli, allowing speed‐dependent filament relaxation to encode motion trajectories.
Hyungjun Park +9 more
wiley +1 more source
Spatial‐Compatibility‐Assisted Molecular Intercalation in MXenes
This work demonstrates a solvent–free NH4F–mediated route for simultaneous Al removal and molecular intercalation in MXenes. Intercalants are selected by comparing their crystallographic X, Y, and Z dimensions with the MXene interlayer spacing, establishing a spatial‐compatibility criterion that rationalizes guest–host matching and enables predictive ...
Minhao Sheng +6 more
wiley +1 more source
Atomic Layer Etching of Nickel Using N<sub>2</sub>/H<sub>2</sub> Plasma Exposure and Hexafluoroacetylacetone. [PDF]
Ali AM +7 more
europepmc +1 more source
The interfacial spin‐orbit interaction in single‐crystalline Fe1−xCox thin films grown on GaAs(001) can be continuously tuned via alloying. Using spin‐orbit ferromagnetic resonance, the authors find that the interfacial spin‐orbit fields exhibit a nonmonotonic dependence on Co concentration, with a minimum at 20% Co. ABSTRACT The discovery of intrinsic
Hongrui Lao +9 more
wiley +1 more source
Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh +9 more
wiley +1 more source
Cryogenic-Assisted Hydrogen Fluoride Surface Reactions Enabling Reversibly Ultra-High Selectivity of Atomic Layer Etching Between SiO<sub>2</sub> and SiN. [PDF]
Hsiao SN +4 more
europepmc +1 more source
Poly(Alkoxythiophene) Rod‐Coil Block Copolymers for Organic Electrochemical Transistors
We present the first synthesis of poly(3‐alkoxythiophene) rod‐coil block copolymers as a new architecture for OMIECs. Incorporating PEG and PLLA coils can enhance device performance beyond the homopolymer. The figure‐of‐merit depends uniquely on coil length.
Junfu Tian +23 more
wiley +1 more source
Advances in core technologies for semiconductor manufacturing: applications and challenges of atomic layer etching, neutral beam etching and atomic layer deposition. [PDF]
Lee TY +8 more
europepmc +1 more source
Lithography‐Compatible Conductive Metal–Organic Frameworks for Scalable Electronics
Conductive MOF thin films are integrated as gate electrodes in semiconductor devices through a photolithography‐compatible patterning strategy. CVD‐grown 2D MOF thin films enable stable operation across bottom‐gate MoS2/MoTe2 field‐effect transistors and top‐gate IGZO arrays, highlighting the potential of conductive MOFs as functional electronic ...
Hyeonwoo Lee +9 more
wiley +1 more source

