Results 131 to 140 of about 2,309,761 (293)

Atomic Energy Commission Report TID-7546 Book 1

open access: yes, 1958
Preface: The Fuel Elements Conference held in Paris, France, November 18 to 23, 1957, under the joint sponsorship of the U.S. Atomic Energy Commission and the French Commissarat à l'Energie Atomique (CEA), provided an intensive review of fuel-element ...
U.S. Atomic Energy Commission
core  

Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (1), P. 091-095 (2017). DOI: https://doi.org/10.15407/spqeo20.01.091 The influence of ethylene glycol on the chemical interaction of PbTe and Pb1–xSnxTe crystals with H2O2–HBr–ethylene glycol etching compositions

open access: yesSemiconductor Physics, Quantum Electronics & Optoelectronics, 2017
The process of cutting, mechanical and chemical treatment of the PbTe and Pb1–xSnxTe crystal surface has been studied. The dependences of the chemical-mechanical polishing rate versus dilution of the base polishing etchant H2O2–HBr–ethylene glycol by the
G.P. Malanych   +2 more
doaj  

“Smelltronics”—From Gas to Smell Sensing

open access: yesAdvanced Materials, EarlyView.
The emerging field of smelltronics, encompassing sensing technologies for complex volatile organic compounds, holds significant potential for extracting valuable chemical information. It facilitates the noninvasive, real‐time monitoring of humans, food, and the environment.
Takeshi Ono   +7 more
wiley   +1 more source

Atomic layer etching of molybdenum with O2 and NbCl5

open access: yes
Molybdenum is a material of significant interest in the development of future interconnects for microelectronics. This is due to a slower increase in resistivity with diminishing critical dimension as compared to copper, and the potential for integration
Vihervaara, Anton   +4 more
core   +1 more source

Phase‐Pure and Size‐Tunable Tin Halide Perovskite Quantum Dots

open access: yesAdvanced Materials, EarlyView.
A trioctylphosphine oxide modulated protocol allows for the synthesis and study of the optical properties of a broad library of tin halide perovskite quantum dots across multiple A‐ and X‐site compositions with precise size tuning while eliminating unwanted 2D phases.
Ole F. Dressler   +7 more
wiley   +1 more source

In situ studies on atomic layer etching of aluminum oxide using sequential reactions with trimethylaluminum and hydrogen fluoride [PDF]

open access: yes
Controlled thin film etching is essential for future semiconductor devices, especially with complex high aspect ratio structures. Therefore, self-limiting atomic layer etching processes are of great interest to the semiconductor industry. In this work, a
Albert, Matthias   +5 more
core   +1 more source

Oxidation state of cobalt oxide in thermal-cyclic atomic layer etching of cobalt by plasma oxidation and organometallization

open access: yesAIP Advances
Thermal-cyclic atomic layer etching of Co blanket film and a fine pattern by plasma oxidation and organometallization were investigated. To obtain a smoothly etched surface and self-limiting etching, a two-step temperature-etching process was used.
Sumiko Fujisaki   +6 more
doaj   +1 more source

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

open access: yesAdvanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova   +10 more
wiley   +1 more source

A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm. [PDF]

open access: yesMaterials (Basel), 2020
Li J   +25 more
europepmc   +1 more source

Generating Unconventional Spin‐Orbit Torques With Patterned Phase Gradients in Tungsten Thin Films

open access: yesAdvanced Materials, EarlyView.
ABSTRACT A key aim in spintronics is to achieve current‐induced magnetization switching via spin‐orbit torques without external magnetic fields. For this, the focus of recent work has been on introducing controlled lateral gradients across ferromagnet/heavy‐metal devices, giving variations in thickness, composition, or interface quality.
Lauren J. Riddiford   +9 more
wiley   +1 more source

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