Results 111 to 120 of about 2,309,761 (293)

Author Correction: Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption. [PDF]

open access: yesSci Rep, 2022
Antoun G   +5 more
europepmc   +1 more source

Stabilization of Strongly Reduced Fe(I) Single Atom Species Coordinated in a 2D Self‐Assembled Metal–Organic Network

open access: yesAdvanced Functional Materials, EarlyView.
A graphene‐supported 2D metal–organic network stabilizes highly reactive Fe(I)‐N4 single sites through Co‐induced charge redistribution. Combined experiments and theory reveal Fe(I) formation, oxygen‐driven oxidation, and O2 activation mechanisms, offering a strategy to access low‐valent iron centers relevant to catalytic and biological processes ...
Alessandro Namar   +9 more
wiley   +1 more source

Engineering a Fluorinated AlPO4 Interface: Toward High Initial Coulombic Efficiency and Stable Oxygen Redox in Li‐Rich Layered Oxide Cathodes

open access: yesAdvanced Functional Materials, EarlyView.
We report a chemically incorporated fluorinated AlPO4 (AlPO4‐F) architecture that functions as a multifunctional “interfacial fortress” for Li‐rich layered oxides (LLOs). By modulating the surface potential to –32.16 mV, this architecture enriches Li+ concentration and repels detrimental electrolyte anions.
Hojun Moon   +13 more
wiley   +1 more source

Enhanced Low-Damage Quantitative Hybrid Cyclic Etching for AlGaN/GaN Heteroepitaxy: Process Optimization and Device Performance Improvement

open access: yesIEEE Journal of the Electron Devices Society
The etching process is pivotal in the fabrication of GaN-based devices, directly influencing their performance. This study presents an enhanced low-damage hybrid cyclic etching technology for AlGaN/GaN heteroepitaxy structures, combining oxygen plasma ...
Guiyu Shen   +5 more
doaj   +1 more source

Photocorrosion Mechanism of TiO2-Coated Photoanodes

open access: yesInternational Journal of Photoenergy, 2015
Atomic layer deposition was used to coat CdS photoanodes with 7 nm thick TiO2 films to protect them from photocorrosion during photoelectrochemical water splitting.
Arjen Didden   +3 more
doaj   +1 more source

Defect‐Mediated Inelastic Light Scattering by Infrared Phonons in Hexagonal Boron Nitride

open access: yesAdvanced Functional Materials, EarlyView.
Optically active defects in hexagonal boron nitride enable inelastic stimulated light scattering mediated by infrared‐active phonons, relaxing conventional Raman selection rules. Defect engineering enhances the Stokes‐conversion process and activates both TO‐ and LO‐phonon scattering channels.
Prabhdeep Singh   +4 more
wiley   +1 more source

Atomic layer process printer

open access: yes, 2020
The invention relates to an atomic layer process printer for material deposition, etching and/or cleaning on an atomic scale in a selective area. The invention further relates to a method for material deposition, etching and/or cleaning on an atomic ...
Plakhotnyuk, Maksym   +6 more
core  

Configuration‐Encoded Cell Alignment by Light‐Gated Silicon Photovoltaic Microcell Arrays

open access: yesAdvanced Functional Materials, EarlyView.
Light‐gated silicon photovoltaic microcells convert pulsed illumination into localized electrical cues. Arranging otherwise similar microcells into four‐lobed, six‐lobed, or circular patterns directs fibroblasts into corresponding local arrangements without wired stimulation.
Yifan Tao   +7 more
wiley   +1 more source

An Engineered Biomimetic Nanoreactor With Cascade Functions for Targeted and Combinatorial Therapy of Ischemic Stroke

open access: yesAdvanced Healthcare Materials, EarlyView.
Preparation of RVG‐modified erythrocyte membrane‐coated HMPB nanocarriers loaded with L‐arginine and NBP (RM@HPAN) and its neuroprotective mechanism. After intravenous injection, RM@HPAN achieves prolonged circulation, RVG‐29‐mediated BBB penetration, and ischemic accumulation.
Shaofa Li   +9 more
wiley   +1 more source

High-frequency and high-power AlGaN/GaN MOSHEMTs fabricated using atomic layer etching for gate recess

open access: yesApplied Physics Express
Atomic layer etching (ALE) is demonstrated as a superior gate recess technique for AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si, offering notable enhancements in high-frequency performance. By suppressing plasma-induced defects and reducing
Hsuan-Yao Huang   +11 more
doaj   +1 more source

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