Results 91 to 100 of about 2,309,761 (293)
Advanced Functional Materials, EarlyView.A gas‐fed, zero‐gap, PEM CO2 electrolyzer is realized by incorporating PDDA+ ions onto the carbonaceous Co/N‐C electrocatalyst, with gaseous H2 and CO2 fed into the anode and cathode, respectively. Operating without an aqueous electrolyte, the system sustains a peak FECO of 65.1% at 100 mA cm−2. ABSTRACT Electrochemical carbon dioxide reduction (ECO2R)
Yuen Leong Chow +6 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Advanced ink systems for solution‐processed textile triboelectric nanogenerators are systematically summarized, spanning conductive, tribo‐negative, and tribo‐positive layers. By connecting ink chemistry, deposition methods, and device function, the present review reveals the key governing principles of solution development and highlights practical ...
Xinlong Sun, Stephen Beeby
wiley +1 more source
Advanced Functional Materials, EarlyView.This review establishes structure‐property‐mechanism relationships across six modification strategies for V‐based oxide water‐splitting electrocatalysts: lattice engineering, heteroatom doping, interface engineering, carbon‐based hybridization, morphology engineering, and surface reconstruction and pre‐catalyst design, where dissolution is reframed as ...
Youness El Issmaeli +4 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Rapid microwave plasma torch engineering tunes crystal phases, carbon graphitization and oxygen‐vacancy defects in HfO2/C@C core‐shell fibrous membranes. Synergistic multi‐loss effects optimize impedance matching to deliver −65.75 dB reflection loss and a 7.37 GHz effective bandwidth for flexible electromagnetic wave absorption.
Qichao Ding +14 more
wiley +1 more source
GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited Al2O3 as Gate Dielectric [PDF]
, 2011 GaSb inversion-mode PMOSFETs with atomic-layer-deposited (ALD) Al2O3 as gate dielectric are demonstrated. A 0.75-mu m-gate-length device has a maximum drain current of 70 mA/mm, a transconductance of 26 mS/mm, and a hole inversion mobility of 200 cm(2)/V
Min Xu +5 more
core +1 more source
Defect-Mediated Atomic Layer Etching Processes on Cl-Si(100): An Atomistic Insight. [PDF]
J Phys Chem C Nanomater Interfaces, 2023 Wang P, Fang F.
europepmc +1 more source
Advanced Functional Materials, EarlyView.Nitride MXenes remain constrained by a persistent gap between computational prediction and experimental realization. This Review identifies the thermodynamic, kinetic, and chemical barriers limiting their synthesis, critically evaluates emerging fabrication routes, and proposes a multidimensional computational‐experimental framework to accelerate the ...
Naresh Varnakavi, Masoud Soroush
wiley +1 more source
Tin etching from metallic and oxidized scandium thin films
AIP Advances, 2017 The role of oxide on Sn adhesion to Sc surfaces was studied with in-situ ellipsometry, X-ray photoelectron spectroscopy and secondary electron microscopy.
M. Pachecka +3 more
doaj +1 more source
Atomic Layer Etching Using a Novel Radical Generation Module. [PDF]
Materials (Basel), 2023 Jung J, Kim K.
europepmc +1 more source
Structure‐Property Relationships in Catecholamine Coatings for Broad Surface Functionalization
Advanced Functional Materials, EarlyView.Inspired by mussel adhesive proteins (MAPs), six catecholamine molecules with different molecular structure were systematically characterized and compared based on their ability to form homogeneous, reactive coatings. Highlighting candidates capable of balancing coating properties of interest, their successful use as primer layers for organic and ...
Caroline F. Harms +5 more
wiley +1 more source