Results 81 to 90 of about 81,085 (254)
Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study [PDF]
In this paper, we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in sub-100 mn MOSFETs.
Asenov, A +4 more
core +2 more sources
A numerical model resulting from irreversible thermodynamics for describing transport processes is introduced, focusing on thermodynamic activity gradients as the actual driving force for diffusion. Implemented in CUDA C++ and using CalPhaD methods for determining the necessary activity data, the model accurately simulates interdiffusion in aluminum ...
Ulrich Holländer +3 more
wiley +1 more source
The investigation of the atomistic mechanisms of processes in complex systems constitutes a major challenge to both theory and experiment. While experimental studies offer a wide variety of insights at the macroscopic scale, the atomistic level of detail
Dirk Zahn et al
doaj
Biomolecular simulations are increasingly being used to generate detailed structural models to aid interpretation of neutron reflectometry (NR) data obtained from model biological membranes.
Arwel V. Hughes +2 more
doaj +1 more source
Stabilization of L‐PBF Ni50.7Ti49.3 under low‐cycle loading was investigated. Recoverable strain after cycling was dependent on the amount of applied load. Recovery ratio was 53.4% and 35.1% at intermediate and high load, respectively. The maximum total strain reached 10.3% at a high load of 1200 MPa.
Ondřej Červinek +5 more
wiley +1 more source
Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs [PDF]
Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer dimensions in next-generation integrated circuits and systems ...
Asenov, A. +4 more
core +2 more sources
Geometry‐driven thermal behavior in wire‐arc additive manufacturing (WAAM) influences microstructural evolution during nonequilibrium solidification of a chemically complex Fe–Cr–Nb–W–Mo–C nanocomposite system. By comparing different deposits configurations, distinct entropy–cooling rate correlations, segregation, and carbide evolution are revealed ...
Blanca Palacios +5 more
wiley +1 more source
Different configurations of coupling strategies influence greatly the accuracy and convergence of the simulation results in the hybrid atomistic-continuum method.
Qian Wang +5 more
doaj +1 more source
Finite Sized Atomistic Simulations of Screw Dislocations
The interaction of screw dislocations with an applied stress is studied using atomistic simulations in conjunction with a continuum treatment of the role played by the far field boundary condition.
Basinski Z. S. +15 more
core +1 more source
Nickel‐based alloys are widely used in high‐temperature applications due to their excellent mechanical strength and oxidation resistance. However, properties such as high‐temperature strength and pronounced work‐hardening make them difficult to machine.
Soheil Rooein +2 more
wiley +1 more source

