Results 201 to 210 of about 102,528 (248)
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Model of the photon-avalanche effect
Physical Review B, 1993The photon-avalanche effect, which involves both absorption from a metastable intermediate level and cross-relaxation energy transfer, introduces a new trend in the achievement of efficient up-conversion lasers. In this paper, we report a quite general theoretical treatment of this process which is successfully applied to the case of ${\mathrm{LiYF}}_ ...
, Joubert, , Guy, , Jacquier
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Effect of avalanche build-up time on avalanche photodiode sensitivity
IEEE Journal of Quantum Electronics, 1985A calculation method for the receiver sensitivity of an avalanche photodiode is considered, taking into account avalanche build-up time and carrier transit time, in addition to the CR time constant. Actual receiver performance is estimated in a high data rate region of up to 10 Gbits/s for germanium avalanche photodiodes, applying the measured ...
H. Ando, H. Kanbe
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2021 3rd International Conference on Signal Processing and Communication (ICPSC), 2021
To obtain high efficiency in encryption techniques many factors plays vital role. Avalanche effect is one of the most important factor which is calculated as number of flipped bits by small change in key, or plaintext or initialization vector. This paper provides performance analysis of encryption techniques considering avalanche effect as a key role ...
Sarita D. Sanap, Vijayshree More
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To obtain high efficiency in encryption techniques many factors plays vital role. Avalanche effect is one of the most important factor which is calculated as number of flipped bits by small change in key, or plaintext or initialization vector. This paper provides performance analysis of encryption techniques considering avalanche effect as a key role ...
Sarita D. Sanap, Vijayshree More
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Crosstalk effects of avalanche CMOS photodiodes
2011 IEEE SENSORS Proceedings, 2011This work explores crosstalk effects of avalanche CMOS photodiodes in a 3D sensor array where photodiodes were implemented under different shapes, perimeters, areas, structures and array sizes using the TSMC 0.35µm technology. The breakdown voltages are increased with areas and depths of p-n junctions, and decreased as perimeters of p-n junctions and ...
Meng-Lin Hsia +3 more
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Effect of volume fraction on granular avalanche dynamics
Physical Review E, 2014We study the evolution and failure of a granular slope as a function of prepared volume fraction, ϕ(0). We rotated an initially horizontal layer of granular material (0.3-mm-diam glass spheres) to a 45° angle while we monitor the motion of grains from the side and top with high-speed video cameras.
Gravish, Nick, Goldman, Daniel I.
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Infrared detection scheme with the photon avalanche effect
Applied Optics, 2003We present a new infrared (IR) detection scheme based on the infrared quantum counter (IRQC) detector and utilizing the photon avalanche process. At the time of its discovery, the phenomenon of photon avalanche was considered a limitation rather than an advantage for the development of IRQC.
Gatch, Delena Bell +2 more
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How disorder can diminish avalanche risks: effect of size distribution
Granular Matter, 2007zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Oger, Luc +2 more
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Noise effects in avalanche photodiodes
IEEE Transactions on Education, 2000The usual formula for the excess noise produced in a simple avalanche photodiode may be introduced in a particularly simple manner by taking advantage of the fact that the ionization coefficients usually encountered in practice are often regarded as constant throughout the device for any specific applied bias voltage.
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Effects of Dead Space on Avalanche Gain Distribution of X-Ray Avalanche Photodiodes
IEEE Transactions on Electron Devices, 2012A random path length model for X-ray avalanche photodiodes (APDs) has been used to assess the effects of carriers' dead spaces and injection position on the avalanche gain distributions. Significant carrier's dead space, typically found in submicrometer avalanche regions, is found to reduce spread in the avalanche gain distribution, which is consistent
Gomes, RB +4 more
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Effect of Nonlinear Avalanche Process in Impatts
10th European Microwave Conference, 1980, 1980An intrinsic limitation en maximum rf modulation has been shown to arise in the avalanche region of the diode. Narrow avalanche region diodes can have high rf modulation and hence high efficiencies. The nonlinearity of ionization process gives rise to a new rectification effect termed as 'abnormal rectification' for small values of avalanche region ...
S.C. Tiwari, W.S. Khokle, M.L. Sisodia
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