Results 131 to 140 of about 22,526 (196)

Design of an Electronic Interface for Single-Photon Avalanche Diodes. [PDF]

Sensors (Basel)
Pullano SA, Oliva G, Titirsha T, Shuvo MMH, Islam SK, Laganà F, La Gatta A, Fiorillo AS.   +7 more
europepmc   +1 more source

Label-free optical observation of disordered-to-ordered transitions in single intrinsically disordered proteins

Zargarbashi S, Dominguez C, Peters M, Yousefi A, Munday S, Wang Y, Chatterjee S, Hudson A, Gordon R, Mellor CJ, Xu L, Rahmani M, Ying C.   +12 more
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GaInAsP/InP Avalanche Photodiodes*

Integrated and Guided Wave Optics, 1978
An avalanche photodiode with high quantum efficiency in the 1.0-1.3 μm wavelength range will be an important component of IOCs to be used in this low loss, low dispersion regime of optical fiber transmission. In this paper we report for the first time the successful fabrication of avalanche photodiodes in the quaternary alloy GaInAsP, grown epitaxially
C. E. Hurwitz, J. J. Hsieh
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GaN avalanche photodiodes

Applied Physics Letters, 2000
We report the electrical and optical characteristics of avalanche photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition. The current–voltage characteristics indicate a multiplication of >25. Experiment indicates and simulation verifies that the magnitude of the electric field at the onset of avalanche gain is ⩾3 MV/cm ...
J. C. Carrano, D. J. H. Lambert, C. J. Eiting, C. J. Collins, T. Li, S. Wang, B. Yang, A. L. Beck, R. D. Dupuis, J. C. Campbell   +9 more
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Ultraviolet avalanche photodiodes

SPIE Proceedings, 2015
The III-Nitride material system is rapidly maturing; having proved itself as a material for LEDs and laser, and now finding use in the area of UV photodetectors. However, many UV applications are still dominated by the use of photomultiplier tubes (PMT).
Ryan McClintock, Manijeh Razeghi
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SiC avalanche photodiodes

2007 International Semiconductor Device Research Symposium, 2007
Ultraviolet detectors are becoming increasingly important in medical, military, and environmental applications, including biological agent detection and non-line-of-sight (NLOS) communications. SiC avalanche photodiodes (APDs) are an attractive candidate for those applications that place a premium on detectors that are compact, rugged, and inexpensive.
Joe C. Campbell, null Han-Din Liu, Dion McIntosh, null Xiaogang Bai   +3 more
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Electroabsorption avalanche photodiodes

Applied Physics Letters, 1974
Schottky barrier avalanche photodiodes have been fabricated on n-type high-purity epitaxial GaAs. These devices have their largest response at wavelengths beyond the usual absorption edge for high-purity materials. The absorption mechanism involves the Franz-Keldysh shift of the absorption edge, and the higher response at the longer wavelengths can be ...
G. E. Stillman, C. M. Wolfe, J. A. Rossi, J. P. Donnelly   +3 more
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SiC Avalanche Photodiodes

2006 IEEE LEOS Annual Meeting Conference Proceedings, 2006
In summary, 4H- and 6HSiC avalanche photodiodes have been fabricated and characterized. These APDs exhibit low dark current, high uniform gain, low excess noise, and external quantum efficiency in excess of 50%
Joe Campbell, Xiangyi Guo, Han-din Liu, Dion McIntosh   +3 more
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Fluctuations in Avalanche Photodiode Structure

AIP Conference Proceedings, 2007
The number of primary photo‐electrons and the excess noise factor of the Avalanche photodiode (APD) are important parameters for the energy resolution of the crystal‐APD system. In the present paper, the mean signal value and its fluctuations have been investigated for the well defined silicon Hamamatsu S8148 APD structure as a function of incident ...
KOÇAK, FATMA, Tapan, Ilhan
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