Results 141 to 150 of about 22,526 (196)

Delta-Doped Sagm-Avalanche Photodiodes

[1991] 49th Annual Device Research Conference Digest, 1991
Summary form only given. The fabrication of a delta-doped SAGM-APD is reported. The multiplication region is only 0.3 mu m thick. A gain-bandwidth product of 75 GHz has been achieved. Using a top-surface reflector, quantum efficiencies of over 70% have been obtained even though the absorption layer is only 1.1 mu m thick. >
R. Kuchibhotla, J.C. Campbell, C. Tsai, W.T. Tsang   +3 more
openaire   +1 more source

The HgCdTe electron avalanche photodiode

SPIE Proceedings, 2004
Electron injection avalanche photodiodes in short-wave infrared (SWIR) to long-wave infrared (LWIR) HgCdTe show gain and excess noise properties indicative of a single ionizing carrier gain process. The result is an electron avalanche photodiode (EAPD) with “ideal” APD characteristics including near noiseless gain.
J. Beck, C. Wan, M. Kinch, J. Robinson, P. Mitra, R. Scritchfield, F. Ma, J. Campbell   +7 more
openaire   +1 more source

Superlattice avalanche photodiodes

Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting, 1997
Summary form only given. InGaAsP-InAlAs superlattice avalanche photodiode (SL-APD) is applied to the receiver of the analog video transmission as well as to the high-bit-rate digital transmission. The low noise, wide bandwidth, low distortion, and wide dynamic range characteristics of the SL-APD are fully exploited in the video transmission system. All
openaire   +1 more source

Avalanche speed in thin avalanche photodiodes

Journal of Applied Physics, 2003
The duration of the avalanche multiplication process in thin GaAs avalanche photodiodes is investigated using a full band Monte Carlo (FBMC) model. The results are compared with those of a simple random path length (RPL) model which makes the conventional assumptions of a displaced exponential for the ionization path length probability distribution ...
Ong, D. S., Rees, G. J., David, J. P. R.
openaire   +2 more sources

Avalanche-Photodiode Frequency Response

Journal of Applied Physics, 1967
The short-circuit photocurrent from an avalanche photodiode is calculated using an exact solution of the differential transport equations for the multiplication region. The dc electric field and the hole and electron velocities are assumed constant in the avalanche region into which photoelectrons are injected.
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Ultralow-noise avalanche photodiodes

SPIE Proceedings, 2001
InP/In0.53Ga0.47As avalanche photodiodes (APDs) have been widely deployed in high-bit-rate, long-haul fiber optic communication systems due to the higher sensitivity, relative to a PIN photodiode, afforded by internal gain of the APD. Owing to their materials and structural limitations it is uncertain whether the performance of InP-based APDs will be ...
Joe C. Campbell, Shuling Wang, X. G. Zheng, G. S. Kinsey, Archie L. Holmes, Jr., X. Sun, R. Sidhu, Ping Yuan   +7 more
openaire   +1 more source

CMOS-compatible avalanche photodiodes

SPIE Proceedings, 1998
As a step towards a complete CMOS avalanche photodiode imager, various avalanche photodiodes have been integrated in a commercially available CMOS process. In this paper, design considerations are discussed and experimental results are compared for a wide variety of diodes. The largest restriction is that no process change is allowed.
Alice Biber, Peter Seitz
openaire   +1 more source

Improved germanium avalanche photodiodes

IEEE Journal of Quantum Electronics, 1980
New kinds of germanium avalanche photodiodes with n+-n-p and p+-n structures were devised for improved excess noise and high quantum efficiency performance. Multiplication noise, quantum efficiency, and pulse response were studied and compared with those of the conventional n+-p structure diode.
O. Mikami, H. Ando, H. Kanbe, T. Mikawa, T. Kaneda, Y. Toyama   +5 more
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Recent advances in avalanche photodiodes

2006 Optical Fiber Communication Conference and the National Fiber Optic Engineers Conference, 2006
The paper reports on recent work on avalanche photodiodes (APDs) which focused on developing new structures and incorporating alternative materials that will yield lower excess noise and higher speed while maintaining optimal gain levels.
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Low noise avalanche photodiodes

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242), 2002
The maximum useful gain in avalanche photodiodes (APDs) is limited by the noise associated with the random fluctuations of the avalanche process which increase with multiplication. The conventional McIntyre theory relates this excess noise F, to the value of the mean multiplication, M and the ratio of the hole to electron ionization coefficients (/spl ...
J.P.R. David, G.J. Rees
openaire   +1 more source