Results 151 to 160 of about 22,526 (196)

MWIR HgCdTe avalanche photodiodes

SPIE Proceedings, 2001
This paper reports results obtained on mid-wave IR x equals 0.3 Hg1-xCdxTe avalanche photodiodes (APDs) that utilize a cylindrical 'p-around-n' front side illuminated n+/n-/p geometry. This 'p-around-n' geometry favors electron avalanche gain. These devices are characterized by a uniform, exponential, gain voltage characteristic that is consistent with
Jeffrey D. Beck, Chang-Feng Wan, Michael A. Kinch, James E. Robinson   +3 more
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Avalanche characteristics in thin GaN avalanche photodiodes

Japanese Journal of Applied Physics, 2019
A Monte Carlo model using random ionization path lengths describing the carriers quantum transport in thin gallium nitride (GaN) avalanche photodiodes (APDs) for ultraviolet detection in industry is developed. This work simulated avalanche characteristics such as impact ionization coefficients, mean multiplication gain and excess noise factor of GaN ...
Cheang, Pei Ling, Wong, Eng Kiong, Teo, Lay Lian   +2 more
openaire   +1 more source

HgCdTe electron avalanche photodiodes

Journal of Electronic Materials, 2004
Exponential-gain values well in excess of 1,000 have been obtained in HgCdTe high-density, vertically integrated photodiode (HDVIP) avalanche photodiodes (APDs) with essentially zero excess noise. This phenomenon has been observed at temperatures in the range of 77–260 K for a variety of cutoff wavelengths in the mid-wavelength infrared (MWIR) band ...
M. A. Kinch, J. D. Beck, C. -F. Wan, F. Ma, J. Campbell   +4 more
openaire   +1 more source

Single Photon Avalanche Photodiodes

Optical Fiber Communication Conference and National Fiber Optic Engineers Conference, 2009
• Performance of Geiger-mode APDs is improving rapidly ↓ • New application opportunities • Infrared SPADs - Acceptable detection efficiencies - Need lower dark count rates → higher operating temperature - Need solution for afterpulsing - Initial systems demonstrations and field ...
openaire   +1 more source

Digital Alloy Avalanche Photodiodes

2019 IEEE Photonics Conference (IPC), 2019
Recently, using Al x In 1-y As y Sb 1-y grown as a digital alloy we have demonstrated APDs with noise as low as Si at telecommunication wavelengths (1300 nm to 1550 nm). In this paper, we a noise suppression mechanism in digital alloys. This is related to the fundamental issue of transport in ordered materials and provides the potential for "designer ...
Joe C. Campbell, Seth Bank
openaire   +1 more source

III-nitride avalanche photodiodes

SPIE Proceedings, 2009
Wide bandgap III-Nitride semiconductors are a promising material system for the development of ultraviolet avalanche photodiodes (APDs) that could be a viable alternative to photomultiplier tubes. In this paper, we report the epitaxial growth and physical properties of device quality GaN layers on high quality AlN templates for the first ...
Ryan McClintock, Jose L. Pau, Can Bayram, Bruno Fain, Paul Giedraitis, Manijeh Razeghi, Melville P. Ulmer   +6 more
openaire   +1 more source

Solar-blind avalanche photodiodes

SPIE Proceedings, 2006
There is a need for semiconductor based UV photodetectors to support avalanche gain in order to realize better performance and more effectively compete with existing photomultiplier tubes. However, there are numerous technical issues associated with the realization of high-quality solar-blind avalanche photodiodes (APDs).
Ryan McClintock, Kathryn Minder, Alireza Yasan, Can Bayram, Frank Fuchs, Patrick Kung, Manijeh Razeghi   +6 more
openaire   +1 more source

Avalanche buildup time of silicon avalanche photodiodes

Applied Physics Letters, 1975
The avalanche buildup time in silicon n+-p avalanche photodiodes is studied by a shot noise investigation. The avalanche buildup time t is given by t∼5×10−13M sec, where M is the multiplication factor.
T. Kaneda, H. Takanashi
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Avalanche Photodiode (APD)

2010
This chapter contains sections titled: History Structure Characteristics Applications Related Devices This chapter contains sections titled: References ]]>
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InAs infrared avalanche photodiodes

1971 International Electron Devices Meeting, 1971
InAs p-n junction photodiodes with high breakdown voltages and extremely low reverse-leakage currents up to the breakdown voltage have been developed. Because of the low current and high breakdown voltage, we have observed quantum efficiencies greater than unity in reverse-biased InAs photodiodes.
openaire   +1 more source