Results 21 to 30 of about 2,791 (216)
Discrimination of Photon- and Dark-Initiated Signals in Multiple Gain Stage APD Photoreceivers
We demonstrate the ability of linear mode single carrier multiplication (SCM) avalanche photodiode (APD)-based optical receivers to discriminate single-photon-initiated avalanche events from dark-current-initiated events.
George M. Williams +3 more
doaj +1 more source
Geiger Avalanche Photodiodes (G-APDs) and Their Characterization [PDF]
In many fields and in particular in astrophysical observations, a chronic problem is the photon-starving condition, which becomes severe when images are to be obtained in short acquisition times (from micro to milliseconds), as happens in hot areas of astrophysics: optical counterparts of high-energy gamma-ray bursts, study and interpretation of ...
Giovanni Bonanno +4 more
openaire +1 more source
Single photon source characterization with a superconducting single photon detector [PDF]
Superconducting single photon detectors (SSPD) based on nanopatterned niobium nitride wires offer single photon counting at fast rates, low jitter, and low dark counts, from visible wavelengths well into the infrared.
Mirin, R.P. +6 more
core +1 more source
Study on surface leakage current at sidewall in InP-based avalanche photodiodes with mesa structure
A multi-mesa InGaAs/InP avalanche photodiode (APD) with the advantage of the completely restricted electric field is proposed. The surface defects, which are the reasons for the sidewall leakage current generation in the mesa-structure APD, are ...
Junqin Zhang +3 more
doaj +1 more source
Area and Bandwidth Enhancement of an n+/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology
This paper presents a CMOS-integrated dot avalanche photodiode (dot-APD) that features a small central n+/p-well hemispherical cathode/p-well structure circularly surrounded by an anode ring.
Seyed Saman Kohneh Poushi +4 more
doaj +1 more source
CMOS Integrated 32 A/W and 1.6 GHz Avalanche Photodiode Based on Electric Field-Line Crowding [PDF]
This paper presents a new Si CMOS linear-mode avalanche photodiode (APD) based on an electric field distribution formed by field-line crowding. In this structure, a spherical avalanching electric field is enforced by field-line crowding due to the ...
Zimmermann, Horst; orcid: +4 more
core +1 more source
4H-SiC SACM Avalanche Photodiode With Low Breakdown Voltage and High UV Detection Efficiency
In this paper, a high-performance 4H-SiC separated absorption charge multiplication ultraviolet avalanche photodiode (APD) with low breakdown voltage is designed and fabricated. The room temperature dark current of the APD remains at ∼0.1 pA level
Xiaolong Cai +7 more
doaj +1 more source
A Geiger-mode avalanche photodiode (GM-APD) laser radar range image has much noise when the signal-to-background ratios (SBRs) are low, making it difficult to recover the real target scene.
Xuyang Wei +7 more
doaj +1 more source
Two spirobisanthracene‐tetraphenylethene (SBA‐TPE) hybrid compounds are synthesized and their photophysical properties in the solid state reported. Circularly polarized luminescence in aggregates, films and dispersions is evaluated. Circularly polarized luminescence imaging is evaluated over crystals revealing discrimination of different types of ...
José L. Páez +7 more
wiley +2 more sources
To enhance avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind avalanche photodiode (APD) by replacing the conventional AlGaN homogeneous multiplication region with a high/low Al content AlGaN ...
Haifan You +7 more
doaj +1 more source

