Results 31 to 40 of about 2,791 (216)

Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs

open access: yesSensors, 2023
Conventional designs of an avalanche photodiode (APD) have been based on a planar p–n junction since the 1960s. APD developments have been driven by the necessity to provide a uniform electric field over the active junction area and to prevent edge ...
Sergey Vinogradov
doaj   +1 more source

Instantaneous Receiver Operating Characteristic (ROC) Performance of Multi-Gain-Stage APD Photoreceivers

open access: yesIEEE Journal of the Electron Devices Society, 2013
We describe the use of analytical and numerical models of a multi-gain-stage single-carrier multiplication (SCM) avalanche photodiode (APD) to generate time-resolved receiver operating-characteristic (ROC) curves.
George M. Williams   +3 more
doaj   +1 more source

Avalanche photodiodes with multiple multiplication layers for coherent detection

open access: yesScientific Reports, 2022
We demonstrate a novel avalanche photodiode (APD) design which fundamentally relaxes the trade-off between responsivity and saturation-current performance at receiver end in coherent system. Our triple In0.52Al0.48As based multiplication (M-) layers with
Zohauddin Ahmad   +7 more
doaj   +1 more source

NUMERICAL ANALYSIS OF HOMOJUNCTION GALLIUM ARSENIDE AVALANCHE PHOTODIODES (GAAS-APDS)

open access: yesProgress In Electromagnetics Research B, 2008
In our earlier work we introduce a numerical analysis to investigate the excess noise and performance factor of double carrier multiplication homojunction avalanche photodiodes (APDs) considering the nonlocal nature of the ionization process. In this paper we investigate the gain, breakdown voltage and carrier injection breakdown probability of ...
Hossein Mokari, Pouya Derakhshan-Barjoei
openaire   +1 more source

Numerical simulation of neutron radiation effects in avalanche photodiodes

open access: yes, 2000
A new one-dimensional (1-D) device model developed for the simulation of neutron radiation effects in silicon avalanche photodiodes is described. The model uses a finite difference technique to solve the time-independent semiconductor equations across a ...
Osborne, M, Watts, SJ, Hobson, PR
core   +1 more source

Gm-APD LiDAR Single-Source Data Self-Guided: Obtaining High-Resolution Depth Map

open access: yesIEEE Journal of Selected Topics in Applied Earth Observations and Remote Sensing, 2023
Geiger-mode avalanche photodiode (Gm-APD) array LiDAR has become the current research focus due to its sensitive response, high precision, and easy integration. However, due to the limitations of the fabrication process and manufacturing cost, the images
Boyi Song   +5 more
doaj   +1 more source

BER Performance of UWOC With APD Receiver in Wide Range Oceanic Turbulence

open access: yesIEEE Access, 2022
In this paper, the bit error rate (BER) performance of underwater wireless optical communication (UWOC) systems with on-off keying (OOK) modulation and an avalanche photodiode (APD) detector are analyzed in a wide range of oceanic turbulence environment,
Xinyun Xu   +4 more
doaj   +1 more source

Performance Recovery of Silicon-Avalanche- Photodiode Electron Detector by Low-Temperature Annealing

open access: yesIEEE Journal of the Electron Devices Society, 2013
We report that the silicon avalanche photodiode (APD) for electron detection almost fully recovers from the damage caused by electron irradiation by annealing. With the electron irradiation at an energy of 8 keV, a prominent increase of the non-amplified
Taizo Kawauchi   +2 more
doaj   +1 more source

Simulation of Extended Wavelength Avalanche Photodiode with the Type-II Superlattice Absorption Layer

open access: yesCrystals, 2021
The relationship between the performance of avalanche photodiode (APD) and structural parameters of the absorption, grading, and multiplication layers has been thoroughly simulated and discussed using the equivalent materials approach and Crosslight ...
Wei-Lin Zhao   +10 more
doaj   +1 more source

NUMERICAL ANALYSIS OF HOMOJUNCTION AVALANCHE PHOTODIODES (APDS)

open access: yesProgress In Electromagnetics Research C, 2008
In this paper we introduce a rigorous numerical analysis to investigate the characteristics of double carrier multiplication homojunction avalanche photodiodes (APDs) considering the nonlocal nature of the ionization process in the wide range of multiplication region width. Also in our calculations the effects of dead space has been considered.
openaire   +1 more source

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