Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs [PDF]
Conventional designs of an avalanche photodiode (APD) have been based on a planar p–n junction since the 1960s. APD developments have been driven by the necessity to provide a uniform electric field over the active junction area and to prevent edge ...
Sergey Vinogradov
doaj +2 more sources
Progress in Avalanche Photodiodes for Laser Ranging [PDF]
Laser ranging is a high-precision geodetic technique that plays an indispensable role in the field of geodynamics. Avalanche photodiodes (APDs) offer a series of advantages over other photodetector technologies, including photomultiplier tubes (PMTs) and
Zhenxing Liu +5 more
doaj +2 more sources
Ultrafast avalanche photodiode exceeding 100 GHz bandwidth [PDF]
Avalanche photodiodes (APDs) demand multiplication materials with low ionization coefficient ratio (k) for high-speed and high-sensitivity photodetection.
Yang Shi +4 more
doaj +2 more sources
Infrared avalanche photodiodes from bulk to 2D materials [PDF]
Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one—optical communication systems due to their time responses and high sensitivities.
Piotr Martyniuk +6 more
doaj +2 more sources
Repeated $$\gamma $$ γ irradiation and thermal annealing via built-in thermo-electric coolers of Si avalanche photodiodes [PDF]
When operating in space, on-board Silicon Geiger-Mode Avalanche Photodiodes (GM-APDs) are exposed to radiation damage that result in an increase in dark count rates.
Shuin Jian Wu +3 more
doaj +2 more sources
Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication Process [PDF]
Since the avalanche phenomenon was first found in bulk materials, avalanche photodiodes (APDs) have been exclusively investigated. Among the many devices that have been developed, silicon APDs stand out because of their low cost, performance stability ...
Tiancai Wang +6 more
doaj +2 more sources
Effect of Multiplication and Charge Layers on the Gain in InGaAsSb/AlGaAs Avalanche Photodiodes at Room Temperature [PDF]
This paper presents a theoretical analysis of npBp infrared (IR) barrier avalanche photodiode (APD) performance operating at 300 K based on a quaternary compound made of AIIIBV—InGaAsSb, lattice-matched to the GaSb substrate with a p-type barrier made of
Tetiana Manyk +5 more
doaj +2 more sources
Design of an Electronic Interface for Single-Photon Avalanche Diodes [PDF]
Single-photon avalanche diodes (SPADs) belong to a family of avalanche photodiodes (APDs) with single-photon detection capability that operate above the breakdown voltage (i.e., Geiger mode).
Salvatore A. Pullano +7 more
doaj +2 more sources
Enhancing Linearity of Light Response in Avalanche Photodiodes by Suppressing Electrode Size Effect [PDF]
The nonlinear characteristics of avalanche photodiodes (APDs) inhibit their performance in high-speed communication systems, thereby limiting their widespread application as optical detectors. Existing theoretical models have not fully elucidated complex
Hongyi Gan, Junwen Yu, Xiangfu Wang
doaj +2 more sources
Characterization of avalanche photodiodes (APDs) for the CUbesat Solar Polarimeter (CUSP) mission
Proceeding of SPIE Conference "Astronomical Telescopes+ Instrumentation", Yokohama (Japan), 16-21 June ...
Sérgio Di Cosimo +2 more
exaly +3 more sources

