Results 21 to 30 of about 962 (171)
An InGaAs/AlAsSb Avalanche Photodiode With a Small Temperature Coefficient of Breakdown
Dark current and avalanche gain M on AlAs0.56Sb0.44 (hereafter referred to as AlAsSb) separate absorption multiplication (SAM) avalanche photodiodes (APDs) were measured at temperatures ranging from 77 K to 300 K. To avoid possible ambiguity in breakdown
Jingjing Xie, Jo Shien Ng, Chee Hing Tan
doaj +1 more source
Two-dimensional (2D)-material-based photodetectors have recently received great attention due to their potentials in developing ultrathin and highly compact devices.
Tenghui Ouyang +4 more
doaj +1 more source
Geiger Avalanche Photodiodes (G-APDs) and Their Characterization [PDF]
In many fields and in particular in astrophysical observations, a chronic problem is the photon-starving condition, which becomes severe when images are to be obtained in short acquisition times (from micro to milliseconds), as happens in hot areas of astrophysics: optical counterparts of high-energy gamma-ray bursts, study and interpretation of ...
Giovanni Bonanno +4 more
openaire +1 more source
In‐orbit performance of avalanche photodiode as radiation detector on board the picosatellite Cute‐1.7+APD II [PDF]
The Cute‐1.7+APD II, 10 × 15 × 20 cm3 in size and 5 kg in mass, is the third picosatellite developed by students at the Tokyo Institute of Technology. One of the primary goals of the Cute‐1.7+APD II mission is to validate the use of avalanche photodiodes (APDs) as a radiation detector for the first time in a space experiment.
J. Kataoka +19 more
openaire +1 more source
Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes
Theoretical analysis and two-dimensional simulation of InGaAs/InAlAs avalanche photodiodes (APDs) and single-photon APDs (SPADs) are reported. The electric-field distribution and tunneling effect of InGaAs/InAlAs APDs and SPADs are studied.
Siyu Cao +6 more
doaj +1 more source
Back-illuminated Al0.1Ga0.9N ultraviolet avalanche photodiodes (APDs) of various multiplication widths were fabricated on AlN templates with a separate absorption and multiplication structure.
Qing Cai +9 more
doaj +1 more source
Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes
In this paper, we provide a detailed insight on InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and a theoretical model of APDs is built.
Siyu Cao +8 more
doaj +1 more source
Two spirobisanthracene‐tetraphenylethene (SBA‐TPE) hybrid compounds are synthesized and their photophysical properties in the solid state reported. Circularly polarized luminescence in aggregates, films and dispersions is evaluated. Circularly polarized luminescence imaging is evaluated over crystals revealing discrimination of different types of ...
José L. Páez +7 more
wiley +2 more sources
Ultraviolet Response in Coplanar Silicon Avalanche Photodiodes with CMOS Compatibility
Highly sensitive ultraviolet (UV) photodetectors are highly desired for industrial and scientific applications. However, the responsivity of silicon photodiodes in the UV wavelength band is relatively low due to high-density Si/SiO2 interface states.
Qiaoli Liu +6 more
doaj +1 more source
Development of Gated Pinned Avalanche Photodiode Pixels for High-Speed Low-Light Imaging
This work explores the benefits of linear-mode avalanche photodiodes (APDs) in high-speed CMOS imaging as compared to different approaches present in literature.
Tomislav Resetar +6 more
doaj +1 more source

