Results 31 to 40 of about 962 (171)

Analytical Evaluation of Signal-to-Noise Ratios for Avalanche- and Single-Photon Avalanche Diodes

Sensors, 2021
Performance of systems for optical detection depends on the choice of the right detector for the right application. Designers of optical systems for ranging applications can choose from a variety of highly sensitive photodetectors, of which the two most ...
Andre Buchner, Stefan Hadrath, Roman Burkard, Florian M. Kolb, Jennifer Ruskowski, Manuel Ligges, Anton Grabmaier   +6 more
doaj   +1 more source

NUMERICAL ANALYSIS OF HOMOJUNCTION GALLIUM ARSENIDE AVALANCHE PHOTODIODES (GAAS-APDS)

Progress In Electromagnetics Research B, 2008
In our earlier work we introduce a numerical analysis to investigate the excess noise and performance factor of double carrier multiplication homojunction avalanche photodiodes (APDs) considering the nonlocal nature of the ionization process. In this paper we investigate the gain, breakdown voltage and carrier injection breakdown probability of ...
Hossein Mokari, Pouya Derakhshan-Barjoei
openaire   +1 more source

InGaAs Communication Photodiodes: From Low- to High-Power-Level Designs

IEEE Photonics Journal, 2010
While InGaAs absorption material has been used for various applications up to 1.6-μm wavelength, specific designs for low-level detection have become of main interest using high responsivity and low-dark-current detectors.
M. Achouche, G. Glastre, C. Caillaud, M. Lahrichi, M. Chtioui, D. Carpentier   +5 more
doaj   +1 more source

Electrically and Geometrically Tunable Photon Pair Entanglement from Ferroelectric Nematic Liquid Crystal. [PDF]

Adv Sci (Weinh)
By exploiting the strong nonlinear optical response and controllable molecular ordering of ferroelectric nematic liquid crystals (FNLCs), these materials can serve as tunable sources of polarization‐entangled photons. Adjusting the sample geometry or applying an external electric field enables continuous control of the entanglement degree, advancing ...
Klopčič S, Kavčič A, Sebastián N, Humar M.   +3 more
europepmc   +2 more sources

Temperature effects on characteristics and performance of near-infrared wide bandwidth for different avalanche photodiodes structures

Results in Physics, 2019
In this paper, the influences of thermal and spectral variations on various structures of avalanche photodiodes (APDs) have been deeply investigated. The characteristics and performance of Silicon (Si), Gallium Arsenide (GaAs) and Indium Gallium Arsenide
I.S. Amiri, Fatma Mohammed Aref Mahmoud Houssien, Ahmed Nabih Zaki Rashed, Abd El-Naser A. Mohammed   +3 more
doaj   +1 more source

NUMERICAL ANALYSIS OF HOMOJUNCTION AVALANCHE PHOTODIODES (APDS)

Progress In Electromagnetics Research C, 2008
In this paper we introduce a rigorous numerical analysis to investigate the characteristics of double carrier multiplication homojunction avalanche photodiodes (APDs) considering the nonlocal nature of the ionization process in the wide range of multiplication region width. Also in our calculations the effects of dead space has been considered.
openaire   +1 more source

Quantum Photothermal Self‐Monitoring Fiber Probes for In Vivo Photothermal Therapy

Advanced Science, EarlyView.
A miniaturized quantum photothermal fiber probe based on a metal/polymer/glass composite optoelectronic fiber that simultaneously guides lightwave and microwave was developed for the first time. The probe achieves enhanced photothermal conversion (13°C/mW, 25°C–120°C range) while providing real‐time self‐monitoring with 0.2°C thermal resolution at the ...
Wanjun Li, Ruixiao Hu, Jie Mao, Jin Wo, Yunsong Zhang, Liang Chen, Ying Liu, Zhibo Li, Yongxin Lin, Minghui Du, Yaofei Chen, Libing Zhou, Tuan Guo   +12 more
wiley   +1 more source

Low-Dark-Current and Wide-Dynamic-Range InGaAs/InAlAs Avalanche Photodiodes with a Dual-Charge Layer

Photonics
This study explores the impact of a dual-charge layer structure on the performance of InGaAs/InAlAs avalanche photodiodes (APDs) with a separate absorption, charge, multiplication, charge, and transit (SACMCT) structure. The dual-charge layer, consisting
Guohao Yang, Tianhong Liu, Jinping Li, Cunzhu Tong   +3 more
doaj   +1 more source

A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology

Sensors, 2018
Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV.
Preethi Padmanabhan, Bruce Hancock, Shouleh Nikzad, L. Douglas Bell, Kees Kroep, Edoardo Charbon   +5 more
doaj   +1 more source

Trap-assisted tunneling in AlGaN avalanche photodiodes

AIP Advances, 2017
We fabricated AlGaN solar-blind avalanche photodiodes (APDs) that were based on separate absorption and multiplication (SAM) structures. It was determined experimentally that the dark current in these APDs is rapidly enhanced when the applied voltage ...
Z. G. Shao, Q. J. Gu, X. F. Yang, J. Zhang, Y. W. Kuang, D. B. Zhang, H. L. Yu, X. K. Hong, J. F. Feng, Y. S. Liu   +9 more
doaj   +1 more source