Results 111 to 120 of about 16,481 (212)

Anomalous excess noise behavior in thick Al_0.85Ga_0.15As_0.56Sb_0.44 avalanche photodiodes. [PDF]

Sci Rep, 2023
Lewis HIJ, Jin X, Guo B, Lee S, Jung H, Kodati SH, Liang B, Krishna S, Ong DS, Campbell JC, David JPR.   +10 more
europepmc   +1 more source

Delayed avalanches in Multi-Pixel Photon Counters

, 2017
Hamamatsu Photonics introduced a new generation of their Multi-Pixel Photon Counters in 2013 with significantly reduced after-pulsing rate. In this paper, we investigate the causes of after-pulsing by testing pre-2013 and post-2013 devices using laser ...
Boone, Kyle, Iwai, Yuji, Rethmeier, Carl, Retiere, Fabrice   +3 more
core   +1 more source

Modelling of High Quantum Efficiency Avalanche Photodiode

Iranian Journal of Electrical and Electronic Engineering, 2019
A model of a low noise high quantum efficiency n+np Germanium Photodiode utilizing ion implantation technique and subsequent drive-in diffusion in the n layer is presented.
T. Baldawi, A. Abuelhaija
doaj  

Design and Fabrication of High-Efficiency, Low-Power, and Low-Leakage Si-Avalanche Photodiodes for Low-Light Sensing. [PDF]

ACS Photonics, 2023
Rawat A, Ahamed A, Bartolo-Perez C, Mayet AS, McPhillips LN, Islam MS.   +5 more
europepmc   +1 more source

Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm. [PDF]

Sensors (Basel), 2022
Zhang H, Tian Y, Li Q, Ding W, Yu X, Lin Z, Feng X, Zhao Y.   +7 more
europepmc   +1 more source

Guard Ring Design to Prevent Edge Breakdown in Double-Diffused Planar InGaAs/InP Avalanche Photodiodes. [PDF]

Materials (Basel), 2023
Chen YC, Yan RH, Huang HC, Nieh LH, Lin HH.   +4 more
europepmc   +1 more source

Engineering of impact ionization characteristics in In_0.53Ga_0.47As/Al_0.48In_0.52As superlattice avalanche photodiodes on InP substrate. [PDF]

Sci Rep, 2020
Lee S, Winslow M, Grein CH, Kodati SH, Jones AH, Fink DR, Das P, Hayat MM, Ronningen TJ, Campbell JC, Krishna S.   +10 more
europepmc   +1 more source

Enhanced performance of T2SLs LWIR avalanche photodiodes with a separate AlxGa1-xSb multiplication layer. [PDF]

Sci Rep
Liu C, Ye H, Zhao W, Bai R, Shi Y.
europepmc   +1 more source

Effect of Multiplication and Charge Layers on the Gain in InGaAsSb/AlGaAs Avalanche Photodiodes at Room Temperature. [PDF]

Sensors (Basel)
Manyk T, Rutkowski J, Kłos K, Gajowski N, Krishna S, Martyniuk P.   +5 more
europepmc   +1 more source

A Study of the Avalanche Multiplication and Excess Noise in Al _<i>x</i> In_1-<i>x</i> As_γSb_1‑ _γ Avalanche Photodiodes Lattice-Matched to GaSb. [PDF]

ACS Photonics
Jin X, Zhou W, Zhao Y, Tian Q, Yi X, Tao X, Craig A, Modak M, Marshall A, Xu Y, Wang G, David JPR, Buller GS.   +12 more
europepmc   +1 more source