Results 91 to 100 of about 5,513 (216)

An InGaAs/AlAsSb Avalanche Photodiode With a Small Temperature Coefficient of Breakdown

IEEE Photonics Journal, 2013
Dark current and avalanche gain M on AlAs0.56Sb0.44 (hereafter referred to as AlAsSb) separate absorption multiplication (SAM) avalanche photodiodes (APDs) were measured at temperatures ranging from 77 K to 300 K. To avoid possible ambiguity in breakdown
Jingjing Xie, Jo Shien Ng, Chee Hing Tan
doaj   +1 more source

High-temperature mid-wavelength infrared avalanche photodiode with modified fully-depleted absorption and multiplication region

Communications Materials
Mid-wavelength infrared (MWIR) avalanche photodiodes (APD) are extensively employed in high-precision detection and thermal imaging in complex context.
Liqi Zhu, Zihao Wang, Jiamu Lin, Jian Huang, Linxuan He, Xi Wang, Songmin Zhou, Zhikai Gan, Xun Li, Qingxin Li, Li He, Changqing Lin, Chun Lin, Baile Chen   +13 more
doaj   +1 more source

Electron Bombarded Silicon Avalanche Photodiodes.

, 1978
The primary aim of the work described in this thesis was to examine theoretically the interaction of an electron beam with commercially available silicon devices , originally intended as avalanche photodiodes and investigate experimentally the possible ...
Varol, Huseyin Selcuk.
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Solar-blind AlxGa1-xN-based avalanche photodiodes

, 2005
We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1-xN/GaN-based avalanche photodiodes.
Butun, B., Butun, S., Ekmel Ozbay, Mutlu Gokkavas, Özbay, Ekmel, Serkan Butun, Tut, T., HongBo Yu, Turgut Tut, Yu, H. B., Gokkavas, M., Bayram Butun   +11 more
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Silicon Avalanche Photodiodes [PDF]

, 2020
The first avalanche photodiodes (APD) were developed more than 40 years ago. For a long time APDs remained red and near-infrared sensitive detectors with an active area below 1 mm 2 .
R Scheuermann, A Stoykov
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Anisotropic optical response of InAs/InP quantum dot avalanche photodiodes

, 2009
Polarization resolved photocurrents in InAs/InP quantum dot (QD) avalanche photodiodes (APDs) comprising of three InAs QD layers have been determined under normal incidence.
Ng B. K., Chia CK, Dong JR(董建荣), Chia C. K.   +3 more
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A compact bias and gain control circuit for avalanche photodiodes [PDF]

, 2018
An integrable solution for stable bias control of avalanche photodiodes up to 30 V is presented.
Morrison, Alan P., Deng, Shijie
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Wavelength Tuneable Frequency Domain Photon Migration Spectrometer for Tissue-like Media

, 2010
Frequency domain spectrometers use intensity modulated light to quantitatively interrogate turbid media. The modulation frequencies employed are in the radiofrequency range. Intensity modulated light launched into a turbid medium generates photon density
Cletus, Biju
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Large Area Silicon Avalanche Photodiodes: Photomultiplier Tube Alternate

, 1982
Silicon avalanche photodiodes have recently been shown to be a potential replacement for vacuum tube photomultipliers in many nuclear scintillation detector applications.
Gerald C. Huth, G. Entine, M.R. Squillante, H.B. Serreze, G. Reiff   +4 more
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Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area

, 2009
Visible-blind p-i-n avalanche photodiodes (APDs) were fabricated with high-quality GaN epilayers deposited on c-plane sapphire substrates by metal-organic chemical vapour deposition.
Yang H, Duan LH, Wang H, Sun X, Zhang S, Liu ZS, Zhao DG, Wang YT, dgzhao@red.semi.ac.cn, Zhu JJ, Zhang SM, Jiang DS, Liu WB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wbliu@semi.ac.cn, Liu WB   +13 more
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