Results 21 to 30 of about 16,481 (212)
Applied Sciences, 2023 This paper reports the implementation of two critical technologies used in light detection and ranging for space applications: (1) a microchip Q-switched laser breadboard; (2) a breadboard of an indium gallium arsenide avalanche photodiode working at 292
Ana de Sousa +8 more
doaj +1 more source
Surface passivation of random alloy AlGaAsSb avalanche photodiode
Electronics Letters, 2023 AlGaAsSb attracts significant interest for near‐infrared avalanche photodiodes (APD). The authors report a two‐order reduction in the dark current and a six‐time enhancement of gain in random alloy (RA) AlGaAsSb APD that is surface passivated by ...
Peng Cao +7 more
doaj +1 more source
IEEE Photonics Journal, 2022 The receiving characteristics of the silicon photonic-integrated chip assembly consisting of transimpedance amplifiers and butt-joint waveguide germanium avalanche photodiodes with lateral separated absorption and multiplication (SAM) structures were ...
Hideki Ono +7 more
doaj +1 more source
Quenching Statistics of Silicon Single Photon Avalanche Diodes
IEEE Journal of the Electron Devices Society, 2021 The statistical behavior of silicon-based single-photon-avalanche-diodes (SPADs) is investigated by using self-consistent 3-D Monte Carlo simulations.
Thibauld Cazimajou +6 more
doaj +1 more source
Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes [PDF]
, 2002 The avalanche multiplication and excess noise characteristics of thin 4H-SiC avalanche photodiodes with an i-region width of 0.1 µm have been investigated. The diodes are found to exhibit multiplication characteristics which change significantly when the
David, J.P.R. +6 more
core +1 more source
AlGaAsSb Avalanche Photodiodes
2018 IEEE Photonics Conference (IPC), 2018 Avalanche photodiodes are widely used in optical receivers for high-speed communication systems. We have been studying the material AlGaAsSb (lattice-matched to InP substrates) experimentally in recent years, evaluating its potential as an alternative avalanche material for these avalanche photodiodes. Our experimental studies cover key characteristics
Ng, J.S., Tan, C.H.
openaire +2 more sources
High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit [PDF]
, 2011 High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to
David, John P. R. +4 more
core +1 more source
Thin Al1−xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown [PDF]
Royal Society Open Science, 2017 When using avalanche photodiodes (APDs) in applications, temperature dependence of avalanche breakdown voltage is one of the performance parameters to be considered. Hence, novel materials developed for APDs require dedicated experimental studies.
Xinxin Zhou +6 more
doaj +1 more source
Advances in near-infrared avalanche diode single-photon detectors
Chip, 2022 Avalanche-photodiode-based near-infrared single-photon detectors have seen rapid development in the last two decades because of their enormous internal gain, high sensitivity, fast response, small volume, and ease of integration.
Chen Liu, Hai-Feng Ye, Yan-Li Shi
doaj +1 more source
Low-Noise 3-D Avalanche Photodiodes
IEEE Photonics Journal, 2016 In this paper, we present a new 3-D structure for the InP-based avalanche photodiode, aiming at decreasing the excess noise factor. To the best of our knowledge, it is the first time new device designs based on the recently developed 3-D spatial dead ...
Zhiwei Wu +3 more
doaj +1 more source