Results 21 to 30 of about 2,951 (180)

Surface passivation of random alloy AlGaAsSb avalanche photodiode

open access: yesElectronics Letters, 2023
AlGaAsSb attracts significant interest for near‐infrared avalanche photodiodes (APD). The authors report a two‐order reduction in the dark current and a six‐time enhancement of gain in random alloy (RA) AlGaAsSb APD that is surface passivated by ...
Peng Cao   +7 more
doaj   +1 more source

Si Photonic-Integrated Chip Assembly With Waveguide Ge Avalanche Photodiode for 10 Gbps L-Band Optical Access Networks

open access: yesIEEE Photonics Journal, 2022
The receiving characteristics of the silicon photonic-integrated chip assembly consisting of transimpedance amplifiers and butt-joint waveguide germanium avalanche photodiodes with lateral separated absorption and multiplication (SAM) structures were ...
Hideki Ono   +7 more
doaj   +1 more source

Quenching Statistics of Silicon Single Photon Avalanche Diodes

open access: yesIEEE Journal of the Electron Devices Society, 2021
The statistical behavior of silicon-based single-photon-avalanche-diodes (SPADs) is investigated by using self-consistent 3-D Monte Carlo simulations.
Thibauld Cazimajou   +6 more
doaj   +1 more source

Advances in near-infrared avalanche diode single-photon detectors

open access: yesChip, 2022
Avalanche-photodiode-based near-infrared single-photon detectors have seen rapid development in the last two decades because of their enormous internal gain, high sensitivity, fast response, small volume, and ease of integration.
Chen Liu, Hai-Feng Ye, Yan-Li Shi
doaj   +1 more source

Low-Noise 3-D Avalanche Photodiodes

open access: yesIEEE Photonics Journal, 2016
In this paper, we present a new 3-D structure for the InP-based avalanche photodiode, aiming at decreasing the excess noise factor. To the best of our knowledge, it is the first time new device designs based on the recently developed 3-D spatial dead ...
Zhiwei Wu   +3 more
doaj   +1 more source

Thin Al1−xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown [PDF]

open access: yesRoyal Society Open Science, 2017
When using avalanche photodiodes (APDs) in applications, temperature dependence of avalanche breakdown voltage is one of the performance parameters to be considered. Hence, novel materials developed for APDs require dedicated experimental studies.
Xinxin Zhou   +6 more
doaj   +1 more source

Simple Monte Carlo Simulator for Modelling Linear Mode and Geiger Mode Avalanche Photodiodes in C++

open access: yesJournal of Open Research Software, 2018
Linear mode and Geiger mode Avalanche Photodiodes are widely used to detect weak optical signals, with the latter able to detect a single photon at a time.
Jonathan D. Petticrew   +2 more
doaj   +1 more source

Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm

open access: yesSensors, 2022
The trend related to reach the high operating temperature condition (HOT, temperature, T > 190 K) achieved by thermoelectric (TE) coolers has been observed in infrared (IR) technology recently.
Małgorzata Kopytko   +3 more
doaj   +1 more source

VLC Using 800-μm Diameter APD Receiver Integrated in Standard 0.35-μm BiCMOS Technology

open access: yesIEEE Photonics Journal, 2021
The fully integrated 800 μm. diameter avalanche photodiode optical receiver is implemented in 0.35 μm BiCMOS technology without any process modifications.
D. Milovancev   +5 more
doaj   +1 more source

AlGaAsSb Avalanche Photodiodes

open access: yes2018 IEEE Photonics Conference (IPC), 2018
Avalanche photodiodes are widely used in optical receivers for high-speed communication systems. We have been studying the material AlGaAsSb (lattice-matched to InP substrates) experimentally in recent years, evaluating its potential as an alternative avalanche material for these avalanche photodiodes. Our experimental studies cover key characteristics
Ng, J.S., Tan, C.H.
openaire   +2 more sources

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