Results 31 to 40 of about 16,481 (212)

Nonlocal effects in thin 4H-SiC UV avalanche photodiodes [PDF]

open access: yes, 2003
The avalanche multiplication and excess noise characteristics of 4H-SiC avalanche photodiodes with i-region widths of 0.105 and 0.285 mum have been investigated using 230-365-nm light, while the responsivities of the photodiodes at unity gain were ...
David, J.P.R.   +6 more
core   +1 more source

The breakdown flash of Silicon Avalance Photodiodes - backdoor for eavesdropper attacks? [PDF]

open access: yes, 2001
Silicon avalanche photodiodes are the most sensitive photodetectors in the visible to near infrared region. However, when they are used for single photon detection in a Geiger mode, they are known to emit light on the controlled breakdown used to detect ...
Bouwmeester D.   +5 more
core   +3 more sources

Simple Monte Carlo Simulator for Modelling Linear Mode and Geiger Mode Avalanche Photodiodes in C++

open access: yesJournal of Open Research Software, 2018
Linear mode and Geiger mode Avalanche Photodiodes are widely used to detect weak optical signals, with the latter able to detect a single photon at a time.
Jonathan D. Petticrew   +2 more
doaj   +1 more source

Effect of dead space on avalanche speed [PDF]

open access: yes, 2002
The effects of dead space (the minimum distance travelled by a carrier before acquiring enough energy to impact ionize) on the current impulse response and bandwidth of an avalanche multiplication process are obtained from a numerical model that ...
A. H. You   +9 more
core   +1 more source

Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm

open access: yesSensors, 2022
The trend related to reach the high operating temperature condition (HOT, temperature, T > 190 K) achieved by thermoelectric (TE) coolers has been observed in infrared (IR) technology recently.
Małgorzata Kopytko   +3 more
doaj   +1 more source

Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes [PDF]

open access: yes, 2005
The effects of impact ionization in the InGaAs absorption layer on the multiplication, excess noise and breakdown voltage are modeled for avalanche photodiodes (APDs), both with InP and with InAlAs multiplication regions.
David, J.P.R.   +3 more
core   +2 more sources

VLC Using 800-μm Diameter APD Receiver Integrated in Standard 0.35-μm BiCMOS Technology

open access: yesIEEE Photonics Journal, 2021
The fully integrated 800 μm. diameter avalanche photodiode optical receiver is implemented in 0.35 μm BiCMOS technology without any process modifications.
D. Milovancev   +5 more
doaj   +1 more source

An avalanche-photodiode-based photon-number-resolving detector

open access: yes, 2008
Avalanche photodiodes are widely used as practical detectors of single photons.1 Although conventional devices respond to one or more photons, they cannot resolve the number in the incident pulse or short time interval.
A Splinelli   +22 more
core   +1 more source

Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes [PDF]

open access: yes, 2001
Avalanche multiplication and excess noise were measured on a series of Al0.6Ga0.4As p+in+ and n+ip+ diodes, with avalanche region thickness, w ranging from 0.026 μm to 0.85 μm.
David, J.P.R.   +5 more
core   +1 more source

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

open access: yesSensors, 2016
Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection.
Shouleh Nikzad   +14 more
doaj   +1 more source

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