Results 81 to 90 of about 962 (171)

High-speed Si-Ge avalanche photodiode with a gain-bandwidth product of 7564 GHz. [PDF]

Nat Commun
Xue J, Cheng C, Bao S, Liu Q, Zhang W, Wang B.   +5 more
europepmc   +1 more source

Reduction in Dark Current in Photodiodes: A Review. [PDF]

Micromachines (Basel)
Ülkü A, Potztal R, Blaettler T, Küpçü CT, Besserer R, Bertsch D, Strüning T, Huber S.   +7 more
europepmc   +1 more source

Simulation and Optimization of Ballistic-Transport-Induced Avalanche Effects in Two-Dimensional Materials. [PDF]

Nanomaterials (Basel)
Wang H, Zhang W, Wu H, Li T, Cheng B, Luo J, Jiang R, Cai M, Huang S, Song H.   +9 more
europepmc   +1 more source

Interaction of Avalanche Photodiodes (APDs) Devices With Thermal Irradiation Environments

International Journal of Information Engineering and Electronic Business, 2012
openaire   +1 more source

Bilateral Geiger mode avalanche in InSe Schottky photodiodes. [PDF]

Nat Commun
Zhao D, Chen Y, Hu T, Cao H, Zhao X, Jia Y, Wang X, Shen H, Yang J, Zhang Y, Tang X, Bai W, Wang J, Chu J.   +13 more
europepmc   +1 more source

A Three-Terminal Si-Ge Avalanche Photodiode with a Breakdown Voltage of 6.8 V and a Gain Bandwidth Product of 1377 GHz. [PDF]

Micromachines (Basel)
Cheng C, Xue J, Yu X, Mu J, Wang B.
europepmc   +1 more source

Local avalanche photodetectors driven by lightning-rod effect and surface plasmon excitations. [PDF]

Nat Commun
Fu Z, Liu J, Yuan M, Cai J, Hong R, Chen X, Lin D, Wu S, Zhang Y, Wu Z, Shen Z, Wang Z, Wang J, Zhang M, Yang Z, Fu D, Zhang F, Zhang R.   +17 more
europepmc   +1 more source

Advances in fully integrated wearable near-infrared spectroscopy: hardware innovations and biomedical applications. [PDF]

JPhys Photonics
Lahade S, Ross N, O'Sullivan TD.
europepmc   +1 more source

Electron and spin dynamics in a single quantum emitter. [PDF]

Sci Rep
Rimek F, Schwarz N, Mannel H, Zöllner M, Ludwig A, Lorke A, Geller M.   +6 more
europepmc   +1 more source

Enhanced performance of T2SLs LWIR avalanche photodiodes with a separate AlxGa1-xSb multiplication layer. [PDF]

Sci Rep
Liu C, Ye H, Zhao W, Bai R, Shi Y.
europepmc   +1 more source