Results 161 to 170 of about 127,795 (313)

Strain-induced two-dimensional topological crystalline insulator in bilayer SnTe. [PDF]

open access: yesNat Commun
Jing L   +6 more
europepmc   +1 more source

InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models

open access: yes, 2014
Q. Smets   +12 more
semanticscholar   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

open access: yesAdvanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam   +6 more
wiley   +1 more source

Perspective: OLED Displays Singing with the Blues

open access: yesAdvanced Materials, EarlyView.
While blue pixels consume approximately 50% of the energy of OLED display front planes, in the 25 years since their invention, 100% internal efficiency triplet‐controlled phosphorescent OLEDs have not met the stability standards necessary for their adoption.
Stephen R. Forrest   +2 more
wiley   +1 more source

Tuning Pore Size in Porous Graphene Membrane for O2/N2 Separation

open access: yesAdvanced Materials, EarlyView.
Single‐layer graphene membranes featuring N‐functionalized, 0D pores offer a promising platform for O2/N2 separation. The heterogeneity of functional groups at the pore edge is dynamically tunable, enabling precise tuning of the pore limiting diameter and gas transport.
Kuang‐Jung Hsu   +5 more
wiley   +1 more source

Field‐Free, Deterministic Giant Spin‐Orbit Torque Switching of 1.3 T Perpendicular Magnetization With Symmetry‐Lifted Topological Surface States

open access: yesAdvanced Materials, EarlyView.
We show a giant, bias‐field free, deterministic, spin‐orbit‐torque switching of perpendicular hard magnets with HC over 1.3 T. By combining the three‐fold 3m symmetry from topological insulator surface states with the rectangular mm2 symmetry from the 2 x 1 intercalation in Cr3Te4, the interface symmetry is significantly reduced into a unidirectional m
He Ren   +6 more
wiley   +1 more source

Home - About - Disclaimer - Privacy