Results 161 to 170 of about 127,795 (313)
Strain-induced two-dimensional topological crystalline insulator in bilayer SnTe. [PDF]
Jing L +6 more
europepmc +1 more source
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam +6 more
wiley +1 more source
High-Temperature Electrical Transport Behavior of p-Doped Boron Diamond Film/n-WS<sub>2</sub> Nanosheet Heterojunction. [PDF]
Li C, Sang D, Shi Y, Ge S, Du L, Wang Q.
europepmc +1 more source
Perspective: OLED Displays Singing with the Blues
While blue pixels consume approximately 50% of the energy of OLED display front planes, in the 25 years since their invention, 100% internal efficiency triplet‐controlled phosphorescent OLEDs have not met the stability standards necessary for their adoption.
Stephen R. Forrest +2 more
wiley +1 more source
Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design. [PDF]
Saravanan M +3 more
europepmc +1 more source
Tuning Pore Size in Porous Graphene Membrane for O2/N2 Separation
Single‐layer graphene membranes featuring N‐functionalized, 0D pores offer a promising platform for O2/N2 separation. The heterogeneity of functional groups at the pore edge is dynamically tunable, enabling precise tuning of the pore limiting diameter and gas transport.
Kuang‐Jung Hsu +5 more
wiley +1 more source
Modeling trap dynamics in oxide-engineered heterostructure TFETs for breast cancer detection. [PDF]
Ghosh R, Saha P.
europepmc +1 more source
We show a giant, bias‐field free, deterministic, spin‐orbit‐torque switching of perpendicular hard magnets with HC over 1.3 T. By combining the three‐fold 3m symmetry from topological insulator surface states with the rectangular mm2 symmetry from the 2 x 1 intercalation in Cr3Te4, the interface symmetry is significantly reduced into a unidirectional m
He Ren +6 more
wiley +1 more source
Performance Analysis and Optimization of an InGaAs/GaAsSb Heterojunction Dopingless Tunnel FET with a Heterogate Dielectric. [PDF]
Huang J +5 more
europepmc +1 more source

