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Band-to-Band Tunneling Diode for Ultralow-Voltage Applications
IEEE Transactions on Electron Devices, 2017This paper presents a band-to-band tunneling (BTBT) diode for use in ultralow-voltage (ULV) applications. The BTBT diode is shown to have nearly zero turn-on voltage, because it does not operate using diffusion current like a typical p-n junction diode. A simple analytical model was developed to better understand the BTBT diode and to help optimize the
Thomas A. Jokinen, Shamus McNamara
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Band-to-Band Tunneling in Ge-Rich SiGe Devices
IEEE Electron Device Letters, 2014Germanium is one of the promising materials for future CMOS technologies, due to its high carrier mobility and low Schottky barrier height (for PMOS). However, the presence of a small direct gap (in addition to the main indirect gap at the L-point) can result in significant band-to-band tunneling (BTBT), even at low voltages.
Borna Obradovic +2 more
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Metallic-nanoparticle assisted enhanced band-to-band tunneling current
Applied Physics Letters, 2011Metallic nanoparticle assisted band-to-band tunneling is proposed, and the impact of such nanoparticle induced states on the tunneling probability and current is modeled and analyzed. An analytical formula for tunneling probability is derived for the case of constant force, and it is shown that the incorporation of these particles in the forbidden gap ...
Deblina Sarkar, Kaustav Banerjee
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Analytical Model of Band-to-Band Tunneling in ATLAS-TFET
2020 IEEE Region 10 Symposium (TENSYMP), 2020The Atomically Thin and Layered Semiconducting-channel Tunnel Field Effect Transistor (ATLAS-TFET) is a recent development from the conventional TFET that shows a sharp transition from off to on and has an exceedingly low subthreshold swing (SS) with minimum recorded value of 3.9 millivolts per decade. In this paper, a semiclassical analytical model of
Ahasan Ahamed +2 more
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Monte Carlo Simulation of Band-to-Band Tunneling in Silicon Devices
Japanese Journal of Applied Physics, 2006A band-to-band tunneling model including trap-assisted tunneling has been implemented in our ensemble full band Monte Carlo simulator. Four kinds of band-to-band tunneling mechanisms are taken into account. All the parameters in the band-to-band tunneling model are verified by comparing the pn junction reverse current with the experimental data.
Z. L. Xia +6 more
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Band-to-Band Tunneling in SiGe: Influence of Alloy Scattering
IEEE Electron Device Letters, 2017An improved band-to-band tunneling (BTBT) model for SiGe random alloy is presented. The model takes into account the coherent transition through the direct band gap as well as the phonon and alloy scattering induced transitions to the indirect conduction band valleys.
Seonghoon Jin +5 more
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A new model of trap assisted band-to-band tunnelling
The Eighth International Conference on Advanced Semiconductor Devices and Microsystems, 2010The paper describes a new approach to calculate currents in a PN diode based on the extension of the Shockley-Read-Hall recombination-generation model. Presented model is an alternative to Hurkx model of trap assisted tunnelling.
Miroslav Mikolasek +6 more
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Band-to-band tunneling in III-V semiconductor heterostructures
Eurocon 2013, 2013To investigate the expected improvement in oncurrent and sub-threshold slope in III-V heterostructure tunnel field-effect transistors, we assess the band-to-band tunneling probability using a one-dimensional model based on the envelope function approximation.
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First demonstration of band-to-band tunneling in black phosphorus
2017 75th Annual Device Research Conference (DRC), 2017Black phosphorus (BP) has recently attracted wide interest for various applications and is particularly appealing for low power tunneling devices due to several unique properties such as a small bandgap and small carrier effective masses. Here, we report the first experimental demonstration of band-to-band tunneling (BTBT) in BP.
Peng Wu +2 more
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Silicon-Based Field-Induced Band-to-Band Tunneling Effect Transistor
IEEE Electron Device Letters, 2004This letter reports a silicon-based field-induced band-to-band tunnelling effect transistor (FIBTET), which has a structure totally compatible with silicon-on-insulator (SOI) MOSFET. The field-induced band-to-band tunnelling effect between degenerate channel and source/drain is used as the key principle of the device operation.
Kim, Kyung Rok +7 more
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