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Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes
Applied Physics Letters, 2016We study low-temperature transport properties of two-dimensional (2D) Si tunnel diodes, or Si Esaki diodes, with a lateral layout. In ordinary Si Esaki diodes, interband tunneling current is severely limited because of the law of momentum conservation, while nanoscale Esaki diodes may behave differently due to the dopants in the narrow depletion region,
Michiharu Tabe +7 more
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First integration of MOSFET band-to-band-tunneling current in BSIM4
Microelectronics Journal, 2013Static leakage currents represent a major issue in nano-scale CMOS. In digital VLSI circuits, the most relevant contributions to the overall leakage current are subthreshold conduction, gate current and band-to-band-tunneling (BTBT) current, which flows from drain/source to bulk through the reverse biased diffusion junctions.
Fabrizio Ramundo +2 more
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Band-to-band tunneling limited ambipolar current in black phosphorus MOSFETs
2017 75th Annual Device Research Conference (DRC), 2017Black phosphorus (BP) has emerged as a promising channel material for highly scaled transistors with a high mobility (1000 cm2/Vs), tunable band gap (0.3 eV–2.0 eV), and anisotropic effective mass [1]-[4] at ultra-thin body thicknesses. While devices with high performance in the ON-state have been demonstrated by using Schottky contacts, the ...
Matthew C. Robbins +2 more
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Band-to-band tunneling and thermal generation gate-induced drain leakage
IEEE Transactions on Electron Devices, 1988MOSFET oxide scaling for DRAM (dynamic random-access memory) applications can be limited by gate-induced diode leakage, which has been shown previously by experiments at cryogenic temperatures to consist of a thermal volume generation and a band-to-band tunneling mechanism. Tunneling is the dominant mechanism at relatively higher voltages and cryogenic
S.H. Voldman +2 more
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Near-infrared optical sensor based on band-to-band tunnel FET
Applied Physics A, 2019In this work, three different device structures based on the band-to-band tunnel field effect transistor (TFET) have been proposed for near-infrared optical sensing application. Comparison has been made on their spectral response to different wavelengths (0.7–1 µm).
Vandana Devi Wangkheirakpam +2 more
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Band to band tunneling in heterojunctions: Semi-classical versus quantum computation
2012 15th International Workshop on Computational Electronics, 2012Band-to-band tunneling (BTBT) determines the on-current in tunnel FETs (TFETs). There is a need to review and recalibrate BTBT models used in TCAD tools, which were developed when BTBT was essentially a leakage phenomenon. Here, we consider the process of BTBT through staggered heterojunctions which find application in the design of TFETs having high ...
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Device Degradation Due to Band-to-Band Tunneling
Extended Abstracts of the 1988 International Conference on Solid State Devices and Materials, 1988Hideyuki Matsuoka +2 more
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Band-to-band Tunneling Related Effects in a Thin MOS Structure
Microelectronic engineering, 2003The effect of band-to-band tunneling (BBT) on the behaviour of MOS structures doped to 10^18-10^19 cm−3 with an 2-3 nm oxide is studied theoretically. The BBT is shown to supply the minority carriers toward the Si/SiO2 interface. This effect can support the inversion layer in the non-equilibrium and modify the I-V and C-V curves.
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Nanoscale InGaAs FinFETs: Band-to-Band Tunneling and Ballistic Transport
ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021Jesus A. Del Alamo +4 more
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