Results 81 to 90 of about 284,732 (318)
Degradation mechanism of the von Willebrand factor A2 domain by nattokinase
FEBS Letters, EarlyView.Nattokinase, a natto‐derived protease, exhibits potent antithrombotic effects. This study demonstrates that nattokinase directly cleaves the von Willebrand factor (vWF) A2 domain in vitro. Unlike the native regulator ADAMTS13, nattokinase degrades folded vWF independently of shear stress.
Ryuichi Hyakumoto +3 more
wiley +1 more source
, 2022 Mixed-halide perovskites (MHPs) have attracted attention as suitable wide-band-gap candidate materials for tandem applications owing to their facile band-gap tuning.
Ghaida Alosaimi (12574668) +6 more
core +1 more source
Nanoscale Research Letters, 2017 La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing ...
Xing Wang +6 more
doaj +1 more source
Modulation of Homer1 EVH1 domain internal dynamics by putative autism‐associated mutations
FEBS Letters, EarlyView.The putative autism‐associated M65I and S97L variants of the EVH1 domain of the postsynaptic scaffold protein Homer1 do not exhibit substantial changes in their overall structure or partner binding. Both of them, but especially the M65I variant, show altered internal dynamics relative to the wild‐type domain on the μs‐ms timescale, indicated by the ...
Fanni Farkas +6 more
wiley +1 more source
Wideband slotted patch antennas using EBG structures
, 2010 Copyright @ 2010 IEEEA slotted microstrip patch antenna is designed with Electromagnetic Band gap (EBG) structures. The performance parameters of the presented antenna are then compared with the conventional patch antenna.
AbuTarboush, HF +7 more
core +1 more source
AIP Advances, 2018 Metal oxide semiconductor field effect transistors (MOSFETs) with Al2O3 passivation layer grown by atomic layer deposition (ALD) at 200 oC and 300 oC were fabricated on hydrogen-terminated polycrystalline diamond by using gold mask technology. The device
Zeyang Ren +6 more
doaj +1 more source
FEBS Letters, EarlyView.An unexpected alternative interaction site for ethyl viologen was identified in formate dehydrogenase 1 from Methylorubrum extorquens. Combined mutagenesis, kinetic analysis, and docking revealed that aromatic residues near an iron–sulfur cluster enable flavin mononucleotide‐independent electron transfer, offering a framework for engineering improved ...
Eleni G. Poloniataki, Yong Hwan Kim
wiley +1 more source
Band-Gap Bowing Parameter of the AlxIn1-xN Derived from Theoretical Simulation
, 2012 [[abstract]]The band-gap energy and band-gap bowing parameter of the wurtzite AlInN alloys are investigated numerically with the CASTEP simulation program. The simulation results suggest that the unstrained band-gap bowing parameter of the wurtzite AlInN
Kuo, Yen-Kuang; Lin, Wen-Wei
core
Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures
, 2016 The direct band gap of monolayer semiconducting transition-metal dichalcogenides (STMDs) enables a host of new optical and electrical properties. However, bilayer STMDs are indirect band gap semiconductors, which limits its applicability for high ...
Sun, Litao, Kou, Liangzhi, Hu, Xiaohui
core +1 more source
IEEE Access, 2020 A hydrogen-terminated diamond (H-diamond) Field effect transistor (FET) with a ferroelectric HfZrOx/Al2O3 stacked gate dielectric was demonstrated for the first time. The HfZrOx(16 nm)/Al2O3(4 nm) gate dielectric was grown by atomic layer deposition (ALD)
Kai Su +8 more
doaj +1 more source