Results 71 to 80 of about 5,212,798 (338)
Creation of partial band gaps in anisotropic photonic-band-gap structures [PDF]
Physical Review B, 1998 The photonic-band-gap (PBG) structure composed of an anisotropic-dielectric sphere in uniform dielectric medium is studied by solving Maxwell's equations using the plane-wave expansion method. In particular, for a uniaxial material with large principal refractive indices and sufficient anisotropy between them, the photonic band structures possess a ...
Li, ZY, Gu, BY, Wang, J
openaire +3 more sources
The newfound relationship between extrachromosomal DNAs and excised signal circles
FEBS Letters, EarlyView.Extrachromosomal DNAs (ecDNAs) contribute to the progression of many human cancers. In addition, circular DNA by‐products of V(D)J recombination, excised signal circles (ESCs), have roles in cancer progression but have largely been overlooked. In this Review, we explore the roles of ecDNAs and ESCs in cancer development, and highlight why these ...
Dylan Casey, Zeqian Gao, Joan Boyes
wiley +1 more source
Electronic Properties of Strained Si/Ge Core-Shell Nanowires
, 2010 We investigated the electronic properties of strained Si/Ge core-shell nanowires along the [110] direction using first principles calculations based on density-functional theory. The diameter of the studied core-shell wire is up to 5 nm.
Ashcroft N. W. +3 more
core +1 more source
Size and shape effects on the band gap of semiconductor compound nanomaterials
Journal of Taibah University for Science, 2017 The size- and shape-dependent band gap energy of semiconductor compound nanomaterials (SCNs) is formulated. The model theory is based on the cohesive energy of the nanocrystals compared to the bulk crystals.
Madan Singh, M. Goyal, Kamal Devlal
semanticscholar +1 more source
FEBS Letters, EarlyView.The Ile181Asn variant of human UDP‐xylose synthase (hUXS1), associated with a short‐stature genetic syndrome, has previously been reported as inactive. Our findings demonstrate that Ile181Asn‐hUXS1 retains catalytic activity similar to the wild‐type but exhibits reduced stability, a looser oligomeric state, and an increased tendency to precipitate ...
Tuo Li +2 more
wiley +1 more source
Polycrystalline diamond RF MOSFET with MoO3 gate dielectric
AIP Advances, 2017 We report the radio frequency characteristics of the diamond metal-oxide-semiconductor field effect transistor with MoO3 gate dielectric for the first time. The device with 2-μm gate length was fabricated on high quality polycrystalline diamond.
Zeyang Ren +8 more
doaj +1 more source
High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealing
Nanoscale Research Letters, 2019 This paper investigates the impacts of post metal annealing (PMA) and post deposition annealing (PDA) on the electrical performance of Ge p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ZrO2 dielectric.
Huan Liu, Genquan Han, Yan Liu, Yue Hao
doaj +1 more source
Materials & Design, 2023 GaN-on-diamond wafers are investigated to overcome the heat accumulation issues in GaN-based electronic devices. Until now, growing the high-quality GaN film on the diamond for device manufacture is still a great challenge.
Yuan Gao +8 more
doaj +1 more source
Bifurcations and stability of gap solitons in periodic potentials
, 2004 We analyze the existence, stability, and internal modes of gap solitons in nonlinear periodic systems described by the nonlinear Schrodinger equation with a sinusoidal potential, such as photonic crystals, waveguide arrays, optically-induced photonic ...
Andrey A. Sukhorukov +13 more
core +1 more source
Small-Band-Gap Halide Double Perovskites.
Angewandte Chemie, 2018 Despite their compositional versatility, most halide double perovskites feature large band gaps. Herein, we describe a strategy for achieving small band gaps in this family of materials.
Adam H. Slavney +6 more
semanticscholar +1 more source