Results 61 to 70 of about 2,433,276 (338)

EDNRB‐dependent endothelin signaling reduces proliferation and promotes proneural‐to‐mesenchymal transition in gliomas

open access: yesMolecular Oncology, EarlyView.
Glioma cells mainly express the endothelin receptor EDNRB, while EDNRA is restricted to a perivascular tumor subpopulation. Endothelin signaling reduces glioma cell proliferation while promoting migration and a proneural‐to‐mesenchymal transition associated with poor prognosis. This pathway activates Ca2+, K+, ERK, and STAT3 signalings and is regulated
Donovan Pineau   +36 more
wiley   +1 more source

A method for determining band offsets in semiconductor superlattices and interfaces

open access: yes, 1989
The long-standing problem of determining band offsets at semiconductor interfaces is readdressed and a new method for obtaining these values is proposed.
Bass, J. M.   +2 more
core   +1 more source

Band alignment engineering at ultra-wide bandgap GeO2/SiO2 heterointerfaces

open access: yesResults in Physics
Owing to the tremendous contribution for the carrier transport across the interface, the band alignment engineering in oxide semiconductor heterojunctions (OSHs) is of vital importance for developing oxide semiconductor optoelectronic devices.
Jiabao Liu   +9 more
doaj   +1 more source

Engineered extracellular vesicles enriched with the miR‐214/199a cluster enhance the efficacy of chemotherapy in ovarian cancer

open access: yesMolecular Oncology, EarlyView.
Loss of the miR‐214/199a cluster is associated with recurrence in ovarian cancer. Engineered small extracellular vesicles (m214‐sEVs) elevate miR‐214‐3p/miR‐199a‐5p in tumor cells, suppress β‐catenin, TLR4, and YKT6 signaling, reprogram tumor‐derived sEV cargo, reduce chemoresistance and migration, and enhance carboplatin efficacy and survival in ...
Weida Wang   +12 more
wiley   +1 more source

Band-Offsets Between Group-III-Nitrides

open access: yes, 1994
The valence-band offset at the zincblende AIN/GaN. AIN/InN and InN/GaN (110) interfaces are calculated self-consistently by means of the linear muffin-tin orbital method using up to 5+5 layer supercells. All interfaces have a type I-offset.
B. Segall   +2 more
core   +1 more source

Band Alignment and Optical Properties of (ZrO2)0.66(HfO2)0.34 Gate Dielectrics Thin Films on p-Si (100)

open access: yesJournal of Mathematical and Fundamental Sciences, 2013
(ZrO2)0.66(HfO2)0.34 dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gaps were obtained by using X-ray photoelectron spectroscopy and reflection electron ...
Dahlang Tahir   +2 more
doaj  

Determination of band offsets at GaN/single-layer MoS2 heterojunction

open access: yes, 2016
We report the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire.
Malleswararao Tangi   +11 more
semanticscholar   +1 more source

IMPDH inhibition enhances cytarabine efficacy in SAMHD1‐expressing leukaemia cells via guanine nucleotide depletion

open access: yesMolecular Oncology, EarlyView.
Cytarabine is a key therapy for acute myeloid leukaemia (AML), but its efficacy is limited by the dNTPase SAMHD1, which hydrolyses its active metabolite. Screening nucleotide biosynthesis inhibitors revealed that IMPDH inhibitors selectively sensitise SAMHD1‐proficient AML cells to cytarabine.
Miriam Yagüe‐Capilla   +9 more
wiley   +1 more source

Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions [PDF]

open access: yes, 1997
Realization of group IV heterostructure devices requires the accurate measurement of the energy band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions.
Yu, E. T.   +7 more
core  

Band-Offset Analysis of Atomic Layer Deposition La2O3 on GaAs(111), (110), and (100) Surfaces for Epitaxial Growth

open access: yes, 2019
In this paper, we measured band offsets for La2O3 prepared by atomic layer deposition on GaAs(111), (110), and (100) surfaces. La2O3 grows epitaxially on GaAs(111) with very low interfacial defect density and exhibits a band offset that is predicted for ...
Xian Gong   +7 more
core   +1 more source

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