Results 121 to 130 of about 106,933 (307)

V_TH-Adjustable p-Channel GaN Field-Effect Transistor with an Inserted n-GaN Layer

Micromachines
In this work, a novel Schottky-gated p-channel GaN field-effect transistor (PFET) with a tunable n-GaN sub-gate layer is investigated. Terminal-current analysis under the actual drain-bias condition shows that the gate-current contribution remains ...
Yuheng Liu, Tao Zhang, Huake Su, Jiahao Chen, Xiangdong Li, Shengrui Xu, Zeyang Ren, Weidong Zhu, Yu Du, Yue Hao, Jincheng Zhang   +10 more
doaj   +1 more source

Strain mediated bandgap reduction, light spectrum broadening, and carrier mobility enhancement of methylammonium lead/tin iodide perovskites

, 2017
Density functional theory calculations are performed to study the electronic and optical properties of methylammonium lead/tin iodide perovskites under hydrostatic strain.
Wang, Hongxia, Bell, John, Ma, Fengxian, Jiao, Yalong, Du, Aijun   +4 more
core   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Wide-bandwidth low-loss 19-cell hollow core photonic band gap fiber and its potential for low latency data transmission

, 2012
A record low loss (3.5dB/km) for a wide operating bandwidth HC-PBGF is reported. Detailed time-of-flight measurements are also presented, enabling first measurements of latency and differential group delay between mode groups in HC ...
N. V. Wheeler, Gray, D. R., E. Numkam, Wheeler, N. V., Hayes, J. R., D. R. Gray, Petrovich, M. N., Baddela, N., Poletti, F., Numkam, E., D. J. Richardson, Slavík, R., N. Baddela, M. N. Petrovich, R. Slavík, J. R. Hayes, F. Poletti, Richardson, D. J.   +17 more
core   +1 more source

Self‐Assembled Monolayers in p–i–n Perovskite Solar Cells: Molecular Design, Interfacial Engineering, and Machine Learning–Accelerated Material Discovery

Advanced Materials, EarlyView.
This review highlights the role of self‐assembled monolayers (SAMs) in perovskite solar cells, covering molecular engineering, multifunctional interface regulation, machine learning (ML) accelerated discovery, advanced device architectures, and pathways toward scalable fabrication and commercialization for high‐efficiency and stable single‐junction and
Asmat Ullah, Ying Luo, Stefaan De Wolf
wiley   +1 more source

Transparent Perovskite Light‐Emitting Diodes with Conductive Oxide Top Electrodes

Advanced Materials, EarlyView.
Transparent perovskite light‐emitting diodes (TrPeLEDs) enable simultaneous display and transparency, expanding application possibilities. Using a metal oxide buffer layer and pulsed laser deposition, TrPeLEDs with diverse compositions and architectures are demonstrated.
Michele Forzatti, Sergio Martínez‐Saiz, Morena Cervino, Edoardo Stanzani, Sandra Jenatsch, Qingsen Zeng, Joo Sung Kim, Dong‐Hyeok Kim, Eojin Yoon, Tae‐Woo Lee, Daniel Tordera, Henk J. Bolink   +11 more
wiley   +1 more source

Realizing giant ferroelectricity in stable wz-Al1 − x B x N alloys by controlling the microstructure and elastic constant

npj Computational Materials
The emerged wurtzite (wz) Al1−x B x N alloy has drawn increasing attention due to its superior ferroelectricity and excellent compatibility with microelectronics.
Jie Su, Zhengmao Xiao, Xinhao Chen, Yong Huang, Zhenhua Lin, Jingjing Chang, Jincheng Zhang, Yue Hao   +7 more
doaj   +1 more source

Sub-bandgap optical properties of wide bandgap semiconductors

, 2021
Wide bandgap semiconductors are being extensively investigated over the world for electronic and optoelectronic devices with higher efficiency, greater power, higher temperature operation, smaller size, and lower cost due to their large bandgap and other
Bao, Yitian, 包一天
core  

Azobenzene's Cross‐Scale Optics and Photonics: Molecular Photoswitching, Mesoscopic Material Motions, and Adaptive Devices

Advanced Materials, EarlyView.
Azobenzene photoswitches translate molecular‐scale E/Z photoisomerization into macroscopic material responses and device‐level photonic functions. This Review highlights how azobenzene research has evolved from molecular photochemistry to photoalignment, mass migration, photomechanics, and heat release, ultimately enabling holography, reconfigurable ...
Heeju Son, Soyul Kwak, Heerin Noh, Minsang Kim, Doyeon Noh, Subhayan Chakraborty, Jaewon Lee, YongDeok Cho, Kyeongsoo Kim, Taewoong Eom, Moonyoung Kim, Jangwon Kim, Hoyoung Lee, Soyoung Lee, Jaehun Kim, Grace G. D. Han, Shin‐Tson Wu, Stefano Oscurato, Arri Priimagi, Marina Saphiannikova, Seungwoo Lee   +20 more
wiley   +1 more source

A Review on Millimeter‐Thickness Polycrystalline Perovskite for High‐Performance Direct X‐Ray Detection

Advanced Sensor Research
Metal halide perovskites (MHPs) have been proven to have excellent direct X‐ray detection properties due to their high carrier lifetime product, strong X‐ray absorption ability, a low electron‐hole pair creation energy, and excellent charge transport ...
Yanshuang Ba, Zhuangjie Xu, Fuhui Bai, Xiaoyun Liu, Yanan Gong, Weidong Zhu, He Xi, Dazheng Chen, Chunxiang Zhu, Jincheng Zhang, Yue Hao, Chunfu Zhang   +11 more
doaj   +1 more source