Results 131 to 140 of about 106,933 (307)

The Study of the Transient Dose Rate Effect on ROIC Pixels in Ultra-Large-Scale Infrared Detectors

Micromachines
Infrared image sensors are crucial across various industries. However, with technological advancements, the growing scale of infrared image sensors has made the impact of transient dose rate effects increasingly significant.
Yuan Liu, Bin Wang, Ziyuan Tang, Mengwei Chen, Hui Wang, Weitao Yang, Longsheng Wu   +6 more
doaj   +1 more source

n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz

Advanced Materials, EarlyView.
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis, Filip Aniés, Yiyang Yu, Mohammed Ghadiyali, Hendrik Faber, Zhanibek Bizak, Youssef Kabri, Pavlos Tzourmpakis, Suman Mandal, Linqu Luo, Temur Maksudov, Mohamad Insan Nugraha, Harold F. Mazo‐Mantilla, Patrice Vanelle, Julie Broggi, Khaled N. Salama, Udo Schwingenschlögl, Martin Heeney, Atif Shamim, Thomas D. Anthopoulos   +19 more
wiley   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

When Poor Exciton Dissociation Limits Photocurrents in Organic Solar Cells: Why Low Offset Non‐Fullerene Acceptor Blends Can't Be Efficient

Advanced Materials, EarlyView.
The energetic offset between the donor and the acceptor components in organic photoactive layers is central to the tradeoff between photovoltage and photocurrent losses. This Perspective covers the most important issues surrounding this topic in non‐fullerene acceptor blends, from the difficulty of accurately determining state energies and driving ...
Dieter Neher, Manasi Pranav
wiley   +1 more source

Dual-Band Electromagnetic Band Gap Structure for Noise Isolation in Mixed Signal SiP

, 2009
A compact dual-band electromagnetic band-gap (EBG) structure is proposed. It is shown through numerical simulation using 3D electromagnetic finite element modelling that by adding a slit to the classical mushroom shape an extra resonance is introduced ...
Rotaru, M.D., Sykulski, J.K.
core   +1 more source

High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO₂/SiO₂ Stacked Gate Dielectric in Trench Structures

Nanomaterials
The progression of SiC MOSFET technology from planar to trench structures requires optimized gate oxide layers within the trench to enhance device performance.
Qimin Huang, Yunduo Guo, Anfeng Wang, Lin Gu, Zhenyu Wang, Chengxi Ding, Yi Shen, Hongping Ma, Qingchun Zhang   +8 more
doaj   +1 more source

Phase‐Pure and Size‐Tunable Tin Halide Perovskite Quantum Dots

Advanced Materials, EarlyView.
A trioctylphosphine oxide modulated protocol allows for the synthesis and study of the optical properties of a broad library of tin halide perovskite quantum dots across multiple A‐ and X‐site compositions with precise size tuning while eliminating unwanted 2D phases.
Ole F. Dressler, Benjamin Aymoz, Sebastian Sabisch, Stefanie Frick, Sebastian Siol, Dmitry N. Dirin, Simon C. Boehme, Maksym V. Kovalenko   +7 more
wiley   +1 more source

Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers

Nanomaterials
This study proposed an innovative method for growing gate oxide on silicon carbide (SiC), where silicon oxide (SiO2) was fabricated on a deposited Al2O3 layer, achieving high quality gate oxide.
Zhenyu Wang, Zhaopeng Bai, Yunduo Guo, Chengxi Ding, Qimin Huang, Lin Gu, Yi Shen, Qingchun Zhang, Hongping Ma   +8 more
doaj   +1 more source

Rethinking Charge Transport and Recombination in Donor‐Diluted Organic Solar Cells

Advanced Materials, EarlyView.
Organic solar cells with 1–45% PM6 content in Y12 were studied to link structure and charge dynamics to performance. The conductivity follows a 3D percolation model without a sharp threshold. Donor dilution preserves the photogeneration yield, but limits the fill factor due to transport resistance losses.
Chen Wang, Christopher Wöpke, Toni Seiler, Jared Faisst, Mathias List, Meike Kuhn, Bekcy Joseph, Alexander Ehm, Dietrich R. T. Zahn, Yana Vaynzof, Eva M. Herzig, Roderick C. I. Mackenzie, Uli Würfel, Maria Saladina, Carsten Deibel   +14 more
wiley   +1 more source

Development trends of GaN-based wide bandgap semiconductors:from solid state lighting to power electronic devices

, 2015
III-nitride wide bandgap semiconductors, such as GaN, InN, A1N and their ternary or quaternary alloy components, are wholly-component direct band gap materials with a full adjustable band gap (0.63-6.2 eV), strong polarization, high temperature resistant,
Shen Bo
core