Results 71 to 80 of about 3,988,589 (240)

None Operational Amplifier (OPA) Based: Design of Analogous Bandgap Reference Voltage

MATEC Web of Conferences, 2018
By using 0.35-um CMOS process, this work achieves a design of analogous band-gap reference voltage circuit with low temperature coefficient. The proposed circuit operates at 3V and generates a reference current of 44 uA.
Chan Hao-Ping, Hung Yu-Cherng
doaj   +1 more source

Electron‐Deficient Linkers Enhance H2O2 Electrosynthesis in Covalent Organic Frameworks

Advanced Functional Materials, EarlyView.
Linker π‐conjugation modulates the electronic state of the Ni–N4 centers and their interaction with the key *OOH intermediate while preserving the primary coordination motif. NiPc‐PTDA delivers an H2O2 selectivity of 92% and a production rate of 34.8 mol gcat−1 h−1, highlighting linker electronic properties as a molecular design parameter for NiPc ...
Houting Xie, Rui Guo, Zhen Liu, Yang Hu, Laichun Zhao, Omid Mazaheri, Bufeng Zhang, Shuaijun Pan   +7 more
wiley   +1 more source

A New Digital to Analog Converter Based on Low-Offset Bandgap Reference

Journal of Electrical and Computer Engineering, 2017
This paper presents a new 12-bit digital to analog converter (DAC) circuit based on a low-offset bandgap reference (BGR) circuit with two cascade transistor structure and two self-contained feedback low-offset operational amplifiers to reduce the effects
Jinpeng Qiu, Tong Liu, Xubin Chen, Yongheng Shang, Jiongjiong Mo, Zhiyu Wang, Hua Chen, Jiarui Liu, Jingjing Lv, Faxin Yu   +9 more
doaj   +1 more source

A start-up free 200nW bandgap voltage reference

, 2016
© 2016 IEEE. A low power cross-coupled bandgap voltage reference is proposed in this paper. Based on the suggested structure, a 9.8 ppm/°C temperature coefficient bandgap voltage reference across-50°C to 150°C temperature range with 1.8-V supply voltage ...
Chang, A, Yongkui Yang, Alan Chang, Chundong Wu, Wang, L, Lei Wang, Yang, Y, Xi Zhu, Goh, WL, Wu, C, Zhu, X, Wang Ling Goh   +11 more
core   +1 more source

Architecture‐Driven Functional Coupling in Vertically Aligned Nanocomposites

Advanced Functional Materials, EarlyView.
Vertically aligned nanocomposites define a growth‐engineered architecture in which vertical interfaces, strain fields, defect pathways, and phase connectivity are created simultaneously. This review shows how these architectural features couple ferroic, optical, ionic, electrochemical, and device responses, establishing design rules and open challenges
Md Shatil Islam‐Shanto, Javier Zamudio‐García, Abraham Sánchez‐Caballero, David Marrero‐López, Vincenzo Esposito   +4 more
wiley   +1 more source

Ground‐State Charge‐Transfer Doping in Donor–Acceptor Semiconducting Polymers

Advanced Functional Materials, EarlyView.
This work demonstrates controlled ground‐state charge‐transfer complex formation (GS‐CTC) and doping in a series of diketopyrrolopyrrole‐based donor–acceptor semiconducting polymers paired with a π‐conjugated penta‐t‐butylpentacyanopentabenzo[25]annulene “cyanostar” macrocycle. Complementary experimental techniques show how subtle molecular, electronic,
Tanner L. Smith, Akshay N. Shah, Tanya A. Balandin, Michel De Keersmaecker, Paramasivam Mahalingam, Debapriya Gupta, Siqi Yu, Eui Hyun Suh, Pushkar Dalal, Erin L. Ratcliff, Scott P. O. Danielsen, Tse Nga Ng, Amar H. Flood, Jason D. Azoulay   +13 more
wiley   +1 more source

Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices

Advanced Functional Materials, EarlyView.
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies, Bin Han, Paolo Samorì   +2 more
wiley   +1 more source

Forward‐Biased Perovskite Photodiodes for In‐Sensor Optical Change Sensing

Advanced Functional Materials, EarlyView.
A forward‐biased perovskite photodiode is introduced as an in‐sensor analog preprocessing unit that uses current balancing between photocurrent and injection current to generate optical changes relative to programmable optical reference levels. The device directly converts reference‐relative optical changes into bipolar current signals, enabling sensor‐
Eungseon Yeon, Je‐Jun Lee, Somin Yun, Sangin Hahn, Chanhyeok Kim, Jinsoo Park, Jung Pyo Hong, Seong‐Jun Han, Jung Woo Kim, Jeong Hwan Lee, Subin Jeon, Youngmin Kim, Gunuk Wang, Hanul Min, Do Kyung Hwang   +14 more
wiley   +1 more source

Advances and limitations in the modelling of fabricated photonic bandgap fibers

We model fabricated silica photonic bandgap fibers and achieve good agreement between simulated and measured properties. We identify the size of the SEM bitmap image as the ultimate limit to the accurate calculation of surfaces modes within the ...
Petrovich, M.N., Richardson, D.J., Monro, T.M., Poletti, F., Amezcua-Correa, R., Broderick, N.G.   +5 more
core   +1 more source

Blue Upconversion Organic Light‐Emitting Diodes Achieving 1000 cd m−2 With an Operating Voltage of 2.7 V by Suppressing Interfacial Exciton Quenching

Advanced Functional Materials, EarlyView.
A triplet‐blocking layer controls triplet exciton dynamics in blue upconversion OLEDs. The layer keeps charge transfer (CT)‐generated triplet excitons inside the triplet‐triplet annihilation (TTA) host, suppresses anode‐side interfacial quenching, and increases the steady‐state triplet population.
Qing‐Jun Shui, Hiroto Iwasaki, Kosuke Anraku, Ken Albrecht, Yutaka Majima, Seiichiro Izawa   +5 more
wiley   +1 more source