Results 71 to 80 of about 4,164,324 (286)
Advanced Functional Materials, EarlyView.Combining field‐effect surface passivation of a narrow‐bandgap tin–lead perovskite by diammonium ions with introducing oleyl‐based amphiphiles to create insulating interface layers between the absorber and the adjacent hole and electron transporting layers increases the open‐circuit voltage to 91.5% of the detailed‐balance limit and enhances the power ...
Vishnu Vijayakumar +18 more
wiley +1 more source
A Sub-1 ppm/°C Reference Voltage Source with a Wide Input Range
MicromachinesWith the continuous advancement of electronic technology, the application of high-voltage integrated circuits is becoming increasingly prevalent in fields such as power systems, medical devices, and industrial automation.
Yuchi Xiao +3 more
doaj +1 more source
Modified Kuijk Bandgap Reference with VGO Extraction [PDF]
, 2019 This creative component presents an innovative CMOS Bandgap Reference Generator topology targeting sub-ppm temperature coefficient over a wide temperature range. The proposed circuit consists of extracting VGO from the temperature characteristics of VBE.
Yatam, Mounica
core +1 more source
GeS as an Emerging OTS Material: Atomic Structure and Modeling of ON/OFF Switching
Advanced Functional Materials, EarlyView.The structural puzzle of glassy GeS, an advanced memory‐selector material, has finally been disentangled, revealing a patchwork of mixed tetrahedral and trigonal species. Under a high electric field, over‐ and under‐coordinated Ge and S defects, together with three‐membered rings, form an interconnected network associated with localized and extended ...
Andrey Tverjanovich +13 more
wiley +1 more source
None Operational Amplifier (OPA) Based: Design of Analogous Bandgap Reference Voltage
MATEC Web of Conferences, 2018 By using 0.35-um CMOS process, this work achieves a design of analogous band-gap reference voltage circuit with low temperature coefficient. The proposed circuit operates at 3V and generates a reference current of 44 uA.
Chan Hao-Ping, Hung Yu-Cherng
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Advanced Functional Materials, EarlyView.Neuromorphic devices for extreme environments are interpreted through the physical states that store and process information. Radiation, temperature extremes, and vacuum can perturb vacancies, filaments, trapped charges, polarization, interfaces, and readout signals.
Taehyun Park +7 more
wiley +1 more source
A New Digital to Analog Converter Based on Low-Offset Bandgap Reference
Journal of Electrical and Computer Engineering, 2017 This paper presents a new 12-bit digital to analog converter (DAC) circuit based on a low-offset bandgap reference (BGR) circuit with two cascade transistor structure and two self-contained feedback low-offset operational amplifiers to reduce the effects
Jinpeng Qiu +9 more
doaj +1 more source
A 2.98nW Bandgap Voltage Reference Using a Self-tuning Low Leakage Sample and Hold
, 2012 A novel low power bandgap voltage reference using a sample and hold circuit with self-calibrating duty cycle and leakage compensation is presented. Measurements of 0.18μm CMOS test chips show a temperature coefficient of 24.7ppm/°C and power consumption ...
Matt Fojtik +3 more
core +1 more source
Advanced Functional Materials, EarlyView.The APTES linker establishes a permanent interfacial dipole, reducing the work function of n‐GaN from 3.55 to 3.29 eV. This strengthens the built‐in electric field, significantly accelerating hole extraction to drive the oxygen evolution reaction (OER). Ultimately, this tailored charge‐separation architecture achieves a remarkable 4.78‐fold enhancement
Jeong‐Kyun Oh +15 more
wiley +1 more source
The start-up circuit for a low voltage bandgap reference
, 2014 This paper proposes the startup circuit for a low voltage CMOS bandgap reference circuit. The all MOS scalable voltage bandgap reference (BGR) circuit has been designed and simulated using a standard 65 nm CMOS technology. The proposed startup circuit is
H. Shrimali +3 more
core +1 more source